NEC 2SC4227-T2, 2SC4227-T1, 2SC4227 Datasheet
©
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10371EJ2V0DS00 (2nd edition)
(Previous No. TC-2403)
Date Published July 1995 P
Printed in Japan
2SC4227
DESCRIPTION
The 2SC4227 is a low supply voltage transistor designed for VHF,
UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the
transistor has been applied small mini mold package.
FEATURES
• Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High Gain
|S
21e|
2
= 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Small Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC4227-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
2SC4227-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4227)
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
1.25 ± 0.1
2.1 ± 0.1
2.0 ± 0.2
0.3
–0
+0.1
0.65 0.65
0.3
–0
+0.1
2
1
3
0.9 ± 0.1
0.3
0.15
–0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2SC4227
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage V
CEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65 mA
Total Power Dissipation P
T 150 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Collector Cutoff Current ICBO 0.8
µ
AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 0.8
µ
AVEB = 1 V, IC = 0
DC Current Gain hFE 40 240 VCE = 3 V, IC = 7 mA
*1
Gain Bandwidth Product fT 4.5 7.0 GHz VCE = 3 V, IC = 7 mA
Feedback Capacitance Cre 0.45 0.9 pF VCE = 3 V, IE = 0, f = 1 MHz
*2
Insertion Power Gain |S21e|
2
10 12 dB VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure NF 1.4 2.7 dB VCE = 3 V, IC = 7 mA, f = 1 GHz
*1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE Classification
Rank R33 R34 R35
Marking R33 R34 R35
hFE 40 to 90 70 to 150 110 to 240
2SC4227
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
100
0
5
0
10
0.5
50 100 150
200
0.5 1.0
10
15
20
0 0.5 1.0
10
20
1 5 10 50
20
50
100
200
V
CE
= 3 V
VCE = 3 V
I
B
= 20 A
µ
P
T
– Total Power Dissipation – mW
TA – Ambient Temperature – °C VCE – Collector to Emitter Voltage – V
I
C
– Collector Current – mA
I
C
– Collector Current – mA
VBE – Base to Emitter Voltage – V
I
C
– Collector Current – mA
h
FE
– DC Current Gain
0.1
1
0
0.5
2 5 10 20 50
0.2
0.5
1.0
2.0
5.0
1.0 5.0 10 50
2
4
6
8
10
f = 1 MHz
V
CE
= 3 V
f = 1 GHz
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
– Collector to Base Voltage – V
C
re
– Feed-back Capacitance – pF
f
T
– Gain Bandwidth Product – GHz
IC – Collector Current – mA
40 A
µ
25
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
60 A
µ
80 A
µ
100 A
µ
120 A
µ
140 A
µ
160 A
µ
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