Collector to Base VoltageVCBO20V
Collector to Emitter VoltageV
CEO10V
Emitter to Base VoltageVEBO1.5V
Collector CurrentIC65mA
Total Power DissipationP
T150mW
Junction TemperatureTj150°C
Storage TemperatureTstg–65 to +150°C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTICSYMBOLMIN.TYP.MAX.UNITTEST CONDITION
Collector Cutoff CurrentICBO0.8
Emitter Cutoff CurrentIEBO0.8
DC Current GainhFE40240VCE = 3 V, IC = 7 mA
Gain Bandwidth ProductfT4.57.0GHzVCE = 3 V, IC = 7 mA
Feedback CapacitanceCre0.450.9pFVCE = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain|S21e|
Noise FigureNF1.42.7dBVCE = 3 V, IC = 7 mA, f = 1 GHz
2
1012dBVCE = 3 V, IC = 7 mA, f = 1 GHz
µ
AVCB = 10 V, IE = 0
µ
AVEB = 1 V, IC = 0
*1
2SC4227
*2
*1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
FE Classification
h
RankR33R34R35
MarkingR33R34R35
hFE40 to 9070 to 150110 to 240
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SC4227
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
– Total Power Dissipation – mW
T
P
0
50100150
TA – Ambient Temperature – °CVCE – Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
CE
= 3 V
V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
15
10
– Collector Current – mA
5
C
I
0
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
100
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
µ
40 A
µ
I
B
= 20 A
0.51.0
10
– Collector Current – mA
C
I
00.51.0
VBE – Base to Emitter Voltage – V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
2.0
1.0
0.5
0.2
– Feed-back Capacitance – pF
re
C
0.1
1
25102050
V
CB
– Collector to Base Voltage – V
50
– DC Current Gain
FE
h
20
10
0.5
151050
I
C
– Collector Current – mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
V
CE
= 3 V
f = 1 GHz
8
6
4
2
– Gain Bandwidth Product – GHz
T
f
0
0.5
1.05.01050
IC – Collector Current – mA
3
Page 4
2SC4227
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
15
CE
= 3 V
V
f = 1 GHz
10
5
– Insertion Power Gain – dB
2
|
21e
|S
0
0.5
151050
IC – Collector Current – mA
NOISE FIGURE vs.
COLLECTOR CURRENT
5
4
V
CE
= 3 V
f = 1 GHz
INSERTION POWER GAIN vs.
FREQUENCY
25
V
CE
I
C
= 7 mA
20
15
10
– Insertion Power Gain – dB
2
|
5
21e
|S
0
0.11.00.55.0
0.22.0
f – Frequency – GHz
= 3 V
3
2
NF – Noise Figure – dB
1
0
0.5
1.05.01050
IC – Collector Current – mA
4
Page 5
S-PARAMETER
(VCE = 3 V, IC = 7 mA, ZO = 50 Ω)
FREQUENCYS11S21S12S22
MHzMAGANGMAGANGMAGANGMAGANG
100.00.804–23.811.631154.8.02374.8.920–16.5
200.00.692–48.610.839137.5.04064.1.791–27.7
300.00.581–70.39.722123.8.05059.9.675–33.5
400.00.489–89.08.519112.9.06056.7.597–37.0
500.00.419–104.97.434104.1.06755.9.538–38.7
600.00.376–117.16.46897.5.07555.6.497–40.0
700.00.342–128.65.72991.8.08255.7.467–41.0
800.00.321–138.45.11586.7.08956.3.443–41.7
900.00.305–147.34.63082.5.09656.1.427–42.5
1000.00.296–155.24.20778.5.10456.4.412–43.6
1100.00.289–162.23.87974.8.11156.0.401–44.6
1200.00.284–169.33.59571.4.11956.4.393–45.8
1300.00.282–175.33.34968.1.12756.2.384–47.3
1400.00.281179.03.13364.8.13656.0.379–48.8
1500.00.283173.82.94561.9.14355.4.372–50.1
1600.00.283168.62.78058.8.15155.0.367–51.8
1700.00.285163.82.63156.2.16054.4.363–53.7
1800.00.286159.92.51453.3.16853.9.359–55.4
1900.00.289155.42.39050.5.17753.3.354–57.3
2000.00.293151.82.29347.8.18652.5.351–59.2
2SC4227
(V
CE = 3 V, IC = 5 mA, ZO = 50 Ω)
FREQUENCYS11S21S12S22
MHzMAGANGMAGANGMAGANGMAGANG
100.00.818–29.414.580156.2.02379.9.932–14.4
200.00.689–54.312.120137.5.04065.1.824–23.4
300.00.594–73.110.142124.6.05255.0.716–30.3
400.00.500–89.88.340114.4.06358.5.620–32.2
500.00.457–102.87.300107.5.06956.4.577–34.2
600.00.404–115.06.211101.0.08154.9.525–35.1
700.00.377–124.45.49696.8.08459.5.511–36.1
800.00.359–134.34.90891.4.09158.4.471–36.2
900.00.342–141.54.45088.1.09758.4.458–35.3
1000.00.335–150.34.01884.7.10061.2.440–36.5
1100.00.326–155.93.75081.4.11261.8.442–36.8
1200.00.321–162.43.41078.1.11561.4.417–37.8
1300.00.317–167.23.18175.6.12462.3.412–38.5
1400.00.321–173.42.99572.5.13163.9.411–39.9
1500.00.318–177.52.80269.8.13863.6.407–40.4
1600.00.320176.62.66567.3.14966.4.400–41.1
1700.00.323173.22.53366.1.15665.3.394–43.7
1800.00.326167.82.36963.0.16265.9.394–44.3
1900.00.331165.62.27561.0.17765.4.390–45.5
2000.00.333161.42.19659.2.18364.5.384–47.6
5
Page 6
S-PARAMETER
(VCE = 3 V, IC = 3 mA, ZO = 50 Ω)
FREQUENCYS11S21S12S22
MHzMAGANGMAGANGMAGANGMAGANG
100.00.906–22.79.710161.6.02682.5.962–10.6
200.00.810–43.78.541145.3.04963.8.895–18.3
300.00.742–60.67.695133.4.06258.7.811–25.8
400.00.638–76.66.580122.4.07356.0.732–27.7
500.00.587–89.85.934114.1.08253.4.680–31.2
600.00.524–102.25.148107.1.09149.7.624–33.5
700.00.490–111.44.627102.2.09451.8.603–34.4
800.00.460–121.44.18196.0.09951.2.568–35.0
900.00.435–129.93.82792.6.10152.9.540–35.7
1000.00.427–138.23.44388.1.10750.9.523–36.7
1100.00.404–144.93.19984.2.11553.7.512–36.8
1200.00.399–151.72.98979.8.11356.6.500–38.6
1300.00.392–157.92.77977.4.12154.9.489–39.2
1400.00.392–163.62.63873.5.12656.4.483–40.4
1500.00.386–169.12.44371.3.13556.4.477–41.8
1600.00.380–174.52.34468.0.13760.0.477–42.4
1700.00.382–179.72.23965.3.14359.5.466–44.4
1800.00.389176.12.11363.0.15159.4.461–44.9
1900.00.383172.52.02561.4.15462.6.456–46.9
2000.00.387168.31.92258.2.16362.0.464–48.3
2SC4227
(V
CE = 3 V, IC = 7 mA, ZO = 50 Ω)
FREQUENCYS11S21S12S22
MHzMAGANGMAGANGMAGANGMAGANG
100.001.009–14.53.544168.8.02778.6.994–5.6
200.00.955–29.73.359156.3.05573.6.969–10.1
300.00.937–42.63.277147.1.07363.4.947–15.9
400.00.864–56.23.034136.6.09157.7.898–18.8
500.00.838–67.32.891128.6.10751.1.865–22.1
600.00.775–79.32.674120.0.11646.6.824–25.8
700.00.745–88.52.485114.2.12545.2.803–27.5
800.00.708–99.12.338106.8.12741.2.776–29.7
900.00.670–107.92.177101.4.13240.2.740–31.5
1000.00.649–116.82.05296.0.13537.2.723–33.7
1100.00.621–124.01.91490.8.13136.6.719–34.2
1200.00.608–131.81.81986.0.12935.4.700–36.3
1300.00.587–138.51.71382.4.13035.2.691–37.6
1400.00.587–144.51.62877.7.12836.1.681–39.2
1500.00.573–152.61.53373.4.12736.0.662–40.7
1600.00.559–157.11.46470.3.12437.5.660–42.7
1700.00.562–164.21.42167.2.12039.1.658–44.0
1800.00.557–168.91.35064.7.12243.3.658–46.0
1900.00.557–173.91.29661.1.12245.2.641–47.8
2000.00.551–178.61.24058.0.12448.5.643–50.1
6
Page 7
[MEMO]
2SC4227
7
Page 8
2SC4227
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8
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