![](/html/58/5856/58566fa8120a134037ed5767269a221f58a8491042f39077f5ba29ef3417c537/bg1.png)
DATA SHEET
SILICON TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
2SC4225
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
• Low Noise and High Gain
NF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz
(reference value)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCB0 25 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CE0 12 V
EB0 3.0 V
C 70 mA
T 160 mW
j 150 ˚C
stg –65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
0.65
+0.1
–0
0.3
0.3
0.65
1
2.0 ± 0.2
0.9 ± 0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
3
Marking
0 to 0.1
+0.1
+0.1
–0
0.3
–0.05
0.15
Characteristics Symbol MIN. TYP. MAX. Unit Test Conditions
Collector Cutoff Current ICB0 1.0
Emitter Cutoff Current IEB0 1.0
DC Current Gain hFE 40 80 200
Gain Bandwidth Product fT 4 GHz
Output Capacitance Cob 1.2 1.8 pF VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain S21e
Noise Figure
hFE Classifications
Rank R2 R3
Marking R2 R3
hFE 40 to 120 100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
µ
AVCB = 10 V, IE = 0
µ
AVEB = 2 V, IC = 0
VCE = 3 V, IC = 20 mA, pulsed
VCE = 3 V, IC = 20 mA, f = 1 GHz
2
7.5 9.0 dB
NF 1.5 3.0 dB VCE = 3 V, IC = 5 mA, f = 1GHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
©
1996
![](/html/58/5856/58566fa8120a134037ed5767269a221f58a8491042f39077f5ba29ef3417c537/bg2.png)
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SC4225
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
30
- DC Current Gain
FE
h
20
10
0.5 1 2 5 10 20 50 70
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
VCE = 10 V
5
2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
V
CE
50
= 10 V
20
10
5
2
- Collector Current - mA
C
I
1
0.5
0.5 0.6 0.7 0.8 0.9
VBE - Base to Emitter Voltage - V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
f = 1.0 GHz
10
1
0.5
0.2
- Gain Bandwidth Product - GHz
T
f
0.1
0.5 1 2 5 10 20 50 70
IC - Collector Current - mA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 GHz
1
0.5
- Output Capacitance - pF
ob
C
0.3
0 0.5 1 2 5 10 20 30
VCB - Collector to Base Voltage - V
5
- Insertion Gain - dB
2
21e
S
0
0.5 1 2 5 10 20 50 70
IC - Collector Current - mA
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
VCE = 10 V
f = 1.2 GHz
5
4
3
2
NF - Noise Figure - dB
1
0
0.5 1 2 5 10 20 50 70
IC - Collector Current - mA
2
![](/html/58/5856/58566fa8120a134037ed5767269a221f58a8491042f39077f5ba29ef3417c537/bg3.png)
NF, Ga vs. COLLECTOR CURRENT
6
5
4
3
2
NF - Noise Figure - dB
1
0
1 3 5 7 10 30
I
C
- Collector Current - mA
G
NF
V
CE
= 10 V
f = 1 GHz
a
10
5
- Associated Gain - dB
a
G
0
2SC4225
3