NEC 2SC4225 Datasheet

DATA SHEET

SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

2SC4225

DESCRIPTION

The 2SC4225 is an NPN silicon epitaxial transistor designed for low

noise amplifier at VHF through UHF band.

It has large dynamic range and good current characteristics.

FEATURES

• Low Noise and High Gain
NF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz

(reference value)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage VCB0 25 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T

CE0 12 V
EB0 3.0 V

C 70 mA

T 160 mW

j 150 ˚C

stg –65 to +150 ˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PACKAGE DIMENSIONS

in millimeters

2.1 ± 0.1

1.25 ± 0.1

2

0.65

+0.1

–0

0.3

0.3

0.65

1

2.0 ± 0.2

0.9 ± 0.1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

3

Marking

0 to 0.1

+0.1

+0.1

–0

0.3

–0.05

0.15

Characteristics Symbol MIN. TYP. MAX. Unit Test Conditions
Collector Cutoff Current ICB0 1.0
Emitter Cutoff Current IEB0 1.0
DC Current Gain hFE 40 80 200
Gain Bandwidth Product fT 4 GHz
Output Capacitance Cob 1.2 1.8 pF VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain S21e 
Noise Figure

hFE Classifications

Rank R2 R3
Marking R2 R3
hFE 40 to 120 100 to 200

Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan

µ

AVCB = 10 V, IE = 0

µ

AVEB = 2 V, IC = 0

VCE = 3 V, IC = 20 mA, pulsed
VCE = 3 V, IC = 20 mA, f = 1 GHz

2

7.5 9.0 dB

NF 1.5 3.0 dB VCE = 3 V, IC = 5 mA, f = 1GHz

VCE = 3 V, IC = 20 mA, f = 1 GHz

©

1996

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SC4225

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

VCE = 10 V

100

50

30

- DC Current Gain

FE

h

20

10

0.5 1 2 5 10 20 50 70
IC - Collector Current - mA

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

7

VCE = 10 V

5

2

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

70

V

CE

50

= 10 V

20
10

5

2

- Collector Current - mA

C

I

1

0.5

0.5 0.6 0.7 0.8 0.9
VBE - Base to Emitter Voltage - V

INSERTION GAIN vs.
COLLECTOR CURRENT

15

VCE = 10 V
f = 1.0 GHz

10

1

0.5

0.2

- Gain Bandwidth Product - GHz

T

f

0.1

0.5 1 2 5 10 20 50 70
IC - Collector Current - mA

OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

2

f = 1.0 GHz

1

0.5

- Output Capacitance - pF

ob

C

0.3
0 0.5 1 2 5 10 20 30

VCB - Collector to Base Voltage - V

5

- Insertion Gain - dB

2



21e

S

0

0.5 1 2 5 10 20 50 70
IC - Collector Current - mA

NOISE FIGURE vs.
COLLECTOR CURRENT

7

6

VCE = 10 V
f = 1.2 GHz

5

4

3
2

NF - Noise Figure - dB

1
0

0.5 1 2 5 10 20 50 70

IC - Collector Current - mA

2

NF, Ga vs. COLLECTOR CURRENT
6
5
4
3
2

NF - Noise Figure - dB

1
0

1 3 5 7 10 30

I

C

- Collector Current - mA

G

NF

V

CE

= 10 V

f = 1 GHz

a

10

5

- Associated Gain - dB

a

G

0

2SC4225

3