NEC 2SC4094R-T2, 2SC4094R-T1, 2SC4094-T2, 2SC4094-T1, 2SC4094 Datasheet

DATA SHEET

SILICON TRANSISTOR

2SC4094

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DATA SHEET

Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan

1987©

DESCRIPTION

The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low­noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.

FEATURES

• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA

•S

21e



2

= 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA

ABSOLUTE MAXIMUM RATINGS (TA = 25





C)

Collector to Base Voltage V

CBO

20 V

Collector to Emitter Voltage V

CEO

10 V

Emitter to Base Voltage V

EBO

1.5 V

Collector Current I

C

65 mA

Total Power Dissipation P

T

200 mW

Junction Temperature T

j

150



C

Storage Temperature T

stg



65 to +150C

ELECTRICAL CHARACTERISTICS (TA = 25





C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Collector Cutoff Current I

CBO

1.0



AVCB = 10 V, IE = 0

Emitter Cutoff Current I

EBO

1.0



AVEB = 1 V, IC = 0

DC Current Gain h

FE

50 250 VCE = 8V, IC = 20 mA

Gain Bandwidth Product f

T

9 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz

Feed-Back Capacitance C

re

0.25 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain



S

21e



2

13 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain MAG 17 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.2 2.0 dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz

hFE Classification

Class R36/RCF * R37/RCG * R38/RCH *

Marking R36 R37 R38

h

FE

50 to 100 80 to 160 125 to 250 * Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

PIN CONNECTIONS

1.

2.

3.

4.

Collector
Emitter
Base
Emitter

5° 5°

5° 5°

0 to 0.1

0.8

2.9±0.2

(1.8)

(1.9)

0.950.85

1.1

+0.2

−0.1

0.16

+0.1

−0.06

0.4

4

1

3

2

+0.1

−0.05

2.8

+0.2

−0.3

1.5

+0.2

−0.1

0.6

+0.1

−0.05

0.4

+0.1

−0.05

0.4

+0.1

−0.05

2

2SC4094

TYPICAL CHARACTERISTICS (TA = 25

C)

TOTAL POWE R DISSIPATION vs.
AMBIENT TEMPERATURE

P

T

-Total Power Dissipation-mW

200

100

0

50

100

150

T

A

-Ambient Temperature-°C

DC CURRENT GAIN vs.
COLLECTOR CURRENT

h

FE

-DC Current Gain

IC-Collector Current-mA

GAIN BANDWIDTH PRODUT vs.
COLLECTOR CURRENT

f

T

-Gain Bandwidth Product-GHz

0.5 1 5 10 50

32571020301

MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY

|S

21e

|

2

-Insertion Gain -dB

MAG-Maximum Available Gain-dB

IC-Collector Current-mA

f-Frequency-GHz

INSERTION GAIN vs.
COLLECTOR CURRENT

|S

21e

|

2

-Insertion Gain-dB

VCB-Collector to Base Voltage-V

FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

C

re

-Feed-back Capacitance-pF

2.0

1.0

0.1

0.2

0.3

0.5

0.7

123571020

12 5102040

I

C

-Collector Current-mA

MAG

|S

21e

|

2

f = 1.0 GHz

VCE = 8 V
f = 1.0 GHz

VCE = 8 V
I

C

= 20 mA

0.1 0.2 0.5 1.0 2.0

VCE = 8 V

VCE = 8 V

30

10

7
5

3

2

20

30

20

10

0

20

10

0

200

100

10

20

50

Free air

3

2SC4094

0.5 1 5 10 50 70
I

C

-Collector Current-mA

NOISE FIGURE vs.
COLLECTOR CURRENT

NF-Noise Figure-dB

7

6

5

4

3

2

1

0

VCE = 8 V
f = 1.0 GHz

S-PARAMETER

VCE = 8.0 V, IC = 5.0 mA, ZO = 50



f (MHz)



S

11



S

11



S

21



S

21



S

12



S

12



S

22



S

22

200
400
600

800
1000
1200
1400
1600
1800
2000

0.774

0.631

0.523

0.460

0.426

0.416

0.417

0.430

0.443

0.458



47.8



88.8



120.9



145.1



166.6

178.2

163.0

152.1

142.1

136.5

12.689

9.952

7.813

5.966

4.841

4.065

3.413

3.035

2.659

2.482

146.5

119.4

100.9

87.6

76.7

68.8

60.7

54.1

48.0

44.3

0.031

0.048

0.058

0.067

0.074

0.083

0.087

0.098

0.105

0.114

65.4

53.4

46.2

43.9

43.8

43.5

41.2

42.8

40.1

43.0

0.882

0.723

0.611

0.564

0.515

0.488

0.459

0.443

0.428

0.414



19.1



29.5



33.4



34.5



37.6



39.6



44.1



45.9



51.1



53.5

VCE = 8.0 V, IC = 20.0 mA, ZO = 50



f (MHz)



S

11



S

11



S

21



S

21



S

12



S

12



S

22



S

22

200

400

600

800
1000
1200
1400
1600
1800
2000

0.461

0.364

0.338

0.330

0.334

0.344

0.359

0.383

0.401

0.419



89.8



135.8



163.4

177.9

163.2

153.9

143.1

136.1

128.3

124.7

23.331

13.501

9.535

7.083

5.604

4.722

3.982

3.517

3.094

2.882

121.6

99.2

86.4

77.5

69.3

63.5

56.8

51.1

45.6

42.7

0.021

0.033

0.046

0.056

0.070

0.084

0.091

0.104

0.116

0.127

60.7

61.2

61.5

62.1

60.0

60.4

54.9

54.5

49.9

50.8

0.665

0.511

0.448

0.430

0.402

0.385

0.362

0.350

0.337

0.323



27.7



30.5



29.5



29.5



32.5



34.8



39.5



42.1



47.4



50.5