NEC 2sc4094 Datasets

DATA SHEET

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DESCRIPTION

The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.

FEATURES

• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA

•S

2

21e

= 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA



SILICON TRANSISTOR

2SC4094

PACKAGE DIMENSIONS

(Units: mm)

+0.2

2.8

−0.3 +0.2

+0.1

−0.05

0.4

3

(1.9)

4

+0.1

−0.05

0.4

(1.8)

2.9±0.2

0.950.85

+0.1

−0.05

0.4

−0.05

0.6

1.5

−0.1

2

1

5° 5°

ABSOLUTE MAXIMUM RATINGS (TA = 25

Collector to Base Voltage V

Collector to Emitter Voltage V

Emitter to Base Voltage V

Collector Current I

Total Power Dissipation P

Junction Temperature T

Storage Temperature T

CBO CEO EBO

C

T j stg

ELECTRICAL CHARACTERISTICS (TA = 25



C)



20 V 10 V

1.5 V 65 mA

200 mW 150

65 to +150C





C)



+0.2

−0.1

0.8

1.1

5° 5°

0 to 0.1

PIN CONNECTIONS

1.

Collector

2.

C



3.

4.

Emitter Base Emitter

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain Bandwidth Product f Feed-Back Capacitance C Insertion Power Gain



S

CBO

EBO

21e

1.0

FE

T

re



50 250 VCE = 8V, IC = 20 mA

9 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz

0.25 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz

2

13 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz



AVCB = 10 V, IE = 0



AVEB = 1 V, IC = 0

Maximum Available Gain MAG 17 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.2 2.0 dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz

+0.1

−0.06

0.16

hFE Classification

Class R36/RCF * R37/RCG * R38/RCH *

Marking R36 R37 R38

FE

h

Document No. P10366EJ1V1DS00 (1st edition) Date Published March 1997 N Printed in Japan

50 to 100 80 to 160 125 to 250 * Old Specification / New Specification

1987©

2SC4094

TYPICAL CHARACTERISTICS (TA = 25

TOTAL POWE R DISSIPATION vs. AMBIENT TEMPERATURE

Free air

200

100

-Total Power Dissipation-mW

T

P

200

100

0

50

A

-Ambient Temperature-°C

T

DC CURRENT GAIN vs. COLLECTOR CURRENT

100

VCE = 8 V

C)

150

FEED-BACK CAPACITANCE vs.

2.0

COLLECTOR TO BASE VOLTAGE

f = 1.0 GHz

1.0

0.7

0.5

0.3

-Feed-back Capacitance-pF

0.2

re

C

0.1 123571020

VCB-Collector to Base Voltage-V

INSERTION GAIN vs.

20

COLLECTOR CURRENT

VCE = 8 V f = 1.0 GHz

50

-DC Current Gain

FE

h

20

10

0.5 1 5 10 50 IC-Collector Current-mA

GAIN BANDWIDTH PRODUT vs.

30

COLLECTOR CURRENT

VCE = 8 V

20

10

7 5

3

-Gain Bandwidth Product-GHz

2

T

f

32571020301

I

C

-Collector Current-mA

10

-Insertion Gain-dB

2

|

21e

|S

0

12 5102040

IC-Collector Current-mA

MAXIMUM AVAILABLE GAIN,INSERTION GAIN vs. FREQUENCY

30

MAG

20

2

|S

21e

|

10

-Insertion Gain -dB

2

|

21e

|S

MAG-Maximum Available Gain-dB

0

0.1 0.2 0.5 1.0 2.0 f-Frequency-GHz

VCE = 8 V

C

= 20 mA

I

2

S-PARAMETER

VCE = 8.0 V, IC = 5.0 mA, ZO = 50





f (MHz)

200 400 600

800 1000 1200 1400 1600 1800 2000

11

S

0.774

0.631

0.523

0.460

0.426

0.416

0.417

0.430

0.443

0.458

7

6

5

4

3

NF-Noise Figure-dB

2

1

0

0.5 1 5 10 50 70



11

S



47.8



88.8



120.9



145.1



166.6

178.2

163.0

152.1

142.1

136.5

NOISE FIGURE vs. COLLECTOR CURRENT

C

-Collector Current-mA

I





21

S

12.689

9.952

7.813

5.966

4.841

4.065

3.413

3.035

2.659

2.482

S

146.5

119.4

100.9

87.6

76.7

68.8

60.7

54.1

48.0

44.3

2SC4094

VCE = 8 V f = 1.0 GHz



21



12

S

0.031

0.048

0.058

0.067

0.074

0.083

0.087

0.098

0.105

0.114

S

65.4

53.4

46.2

43.9

43.8

43.5

41.2

42.8

40.1

43.0

12





22

S

0.882

0.723

0.611

0.564

0.515

0.488

0.459

0.443

0.428

0.414

         

S

19.1

29.5

33.4

34.5

37.6

39.6

44.1

45.9

51.1

53.5

22

VCE = 8.0 V, IC = 20.0 mA, ZO = 50





f (MHz)

200

400

600

800 1000 1200 1400 1600 1800 2000

11

S

0.461

0.364

0.338

0.330

0.334

0.344

0.359

0.383

0.401

0.419



89.8



135.8



163.4

177.9

163.2

153.9

143.1

136.1

128.3

124.7

11

S





21

S

23.331

13.501

9.535

7.083

5.604

4.722

3.982

3.517

3.094

2.882

S

121.6

99.2

86.4

77.5

69.3

63.5

56.8

51.1

45.6

42.7

21





12

S

0.021

0.033

0.046

0.056

0.070

0.084

0.091

0.104

0.116

0.127

S

60.7

61.2

61.5

62.1

60.0

60.4

54.9

54.5

49.9

50.8



12



22

S

0.665

0.511

0.448

0.430

0.402

0.385

0.362

0.350

0.337

0.323

         

S

27.7

30.5

29.5

32.5

34.8

39.5

42.1

47.4

50.5

22

3

S-PARAMETER

21e

-FREQUENCY

S

CONDITION V

120°

S

11e

, S

22e

CE

= 8 V

I

C

= 20/5 mA

-FREQUENCY

D

R

A

W

O

T

S

H

T

0.02

G

N

E

L

E

V

A

0.01

W

0

0.49

0.48

CONDITION VCE = 8 V, IC = 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)

0.07

0.43

130

0.06

0.44

0.05

140

0.4

0.45

R

O

T

A

R

0.04

E

0.46

N

E

G

0.03

0.47

E

R

G

E

D

N

0.48

I

T

N

E

I

C

F

0.49

F

E

O

C

N

0

O

I

T

C

E

L

F

D

E

A

R

O

0.01

L

0.1

F

O

D

R

E

A

L

G

W

N

O

0.02

A

T

S

H

T

G

N

E

0.03

0.47

0.46

CO

E

C

N

A

T

C

0.3

150

A

E

+JX

R

––––

(

E V

Z

I T

I

S

E

OS

P

0.2

0.1

0

0.1

S

T

0.2

N

160

E

−

N

O

P

L

E

)

OM

V

A

C

E

W

0.3

C

150

N

−

0.04

A

T

C

0.4

0.05

140

−

0.45

0.06

0.44

0.43

freq. = 0.2 to 2 GHz (Step 200 MHz)

90°

IC = 20 mA

0.2 GHz

2SC4094

0.13

0.12

0.38

0.9

R

)

O

2 GHz

0.12

0.38

0.37

90

1.0

0.2

0.4

0.2

1.0

1.2

0.2

0.4

0.6

0.2

1.0

−

90

0.14

0.36

0.35

80

1.2

1.4

0.6

0.8

1.0

0.8

0.6

1.4

1.6

1.8

IC = 20 mA

0.8

1.0

0.8

0.2 GHz

0.6

0.4

1.4

1.2

−

80

0.14

0.13

0.36

0.37

0.15

0.16

0.34

70

0060

1.6

1.8

2.0

3.0

IC = 5 mA

1.8

1.6

−

70

0.16

0.15

0.35

0.17

0.33

0.18

0.32

0.19

50

0.31

2.0

40

3.0

4.0

10

4.0

5.0

S

22e

3.0

−40

0.19

−50

2.0

0.18

0.32

−

60

0.17

0.33

0.34

12e

-FREQUENCY

S

CONDITION V

120°

0.20

0.30

0.21

0.29

30

0.22

0.28

20

6.0

0.23

0.27

10

0.24

0.26

20

50

0.25

20

0

50

0.24

20

0.26

−10

10

0.23

0.27

0.2 GHz

−20

0.22

5.0

0.28

4.0

−30

0.21

0.29

0.20

0.30

0.31

CE

= 8 V

I

C

= 20/5 mA

freq. = 0.2 to 2 GHz (Step 200 MHz)

90°

60°

0.11

0.10

0.39

0.40

0.09

0.41

0.08

0.42

120

0.5

T

N

E

N

O

P

M

)

O

0.6

110

0.7

2 GHz

100

0.9

0.8

IC = 20 mA

0.2

0.3

0.4

0.5

0.6

0.7

0.8

REACTANCE COMPONENT

––––

(

0.7

0.09

IC = 5 mA

0.8

110

−

0.10

0.11

0.40

0.39

Z

0.9

100

−

11e

O

(

−JX

––––

Z

A

E

R

IVE

T

A

G

NE

0.5

130

−

0.6

0.07

120

−

0.08

0.42

0.41

60°

180°

150°

−150°

IC = 5 mA

−120°

S

21e

2GHz

40 8 12 16 20

−90°

−60°

30°

−30°

150°

S

12e

IC = 20 mA

2GHz

30°

IC = 5 mA

180°

0°

0.2 GHz

0.040 0.08 0.12 0.16 0.2

−150°

−120°

−60°

0°

−30°

−90°

4

[MEMO]

2SC4094

5

[MEMO]

2SC4094

6

[MEMO]

2SC4094

7

2SC4094

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.

M4 96. 5