DATA SHEET
SILICON TRANSISTOR
2SC3841
UHF OSCILLATOR AND UHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10362EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1986©
DESCRIPTION
The 2SC3841 is an NPN silicon epitaxial transistor intended for use as
UHF oscillators and a UHF mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially recommendd
for Hybried Integrated Circuit and other applications.
FEATURES
• High Gain Bandwidth Procuct; fT = 4.0 GHz TYP.
• Low Collector to Base Time Constant; CC
r
b’b
= 4.0 ps TYP.
• Low Output Capacitance; C
ob
= 1.5 pF MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Maximum Voltages and Current
Collector to Base Voltage V
CBO
25 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3V
Collector Current I
C
30 mA
Maximum Power Dissipation
Total Power Dissipation P
T
200 mW
Maximum Power Temperutures
Junction Temperature T
j
150
C
Storage Temperature T
stg
55 to +150C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1
AVCB = 10 V, IE = 0
DC Current Gain h
FE
40 100 200 VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage V
CE(sat)
0.09 0.5 V IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product f
T
2.5 4.0 GHz VCE = 10 V, IE = 5.0 mA
Output Capacitance C
ob
0.85 1.5 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Collector to Base Time Constatnt CC
r
b’b
4.0 10.0 ps VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz
hFE Classification
Class T62/P * T63/Q * T64/R *
Marking T62 T63 T64
h
FE
40 to 80 60 to 120 100 to 200 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.21.1 to 1.4
0 to 0.1
0.950.3 0.95
0.4
+0.1
−0.05
0.4
+0.1
−0.05
0.16
+0.1
−0.06
0.65
+0.1
−0.15
2
2SC3841
TYPICAL CHARACTERISTICS (TA = 25
C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
h
FE
-DC Current Gain
0.1 0.2 0.5 1 2 5 10 20 400.05
20
10
5
50
100
200
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
f
T
-Gain Bandwidth Product-GHz
12 51020400.5
0.1
0.2
0.5
1
2
5
7
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
-Base to Emitter Voltage-V
I
C
-Collector Current-mA
0.6 0.7 0.8 0.9
0.5
1
2
5
10
20
50
70
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
|S
21e
|
2
-Insertion Gain-dB
12 5 1020400.5
0
5
10
15
VCE = 10 V
VCE = 10 V
VCE = 10 V
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
-Collector to Base Voltage-V
C
ob
-Output Capacitance pF
12 510200.5
2
1
3
f = 1.0 MHz
C
C
.
r
b'b
vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
C
C
.
r
b'b
-Collector to Base Time Constant-ps
0.5 1 2 5 10 20 400
4
2
6
8
10
VCE = 10 V
I
E
= −50 mA
f = 39.1 MHz
VCE = 10 V
f = 1.0 GHz
3
2SC3841
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
50
100
200
300
400
500
600
700
800
900
1000
1100
1200
1.047
0.944
0.750
0.562
0.468
0.394
0.372
0.359
0.343
0.339
0.320
0.339
0.351
3
18
56
84
106
123
138
150
164
172
178
170
168
14.240
13.693
10.802
8.270
6.449
5.399
4.421
3.824
3.388
3.020
2.692
2.483
2.291
178
164
137
118
105
97
89
83
77
73
67
64
61
0.003
0.026
0.058
0.078
0.091
0.106
0.120
0.133
0.146
0.158
0.172
0.188
0.204
42
81
66
59
58
58
59
59
58
59
59
59
59
1.012
0.989
0.759
0.582
0.484
0.417
0.343
0.309
0.288
0.292
0.279
0.279
0.279
3
10
30
39
40
45
44
48
53
54
61
57
61
4
2SC3841
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
−
160
−
150
−
140
−
130
−
120
−
110
−
100
−
90
−
80
−
70
−
60
−50
−40
−30
−20
−10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02
0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
––––
Z
O
)
NE
G
A
T
IVE
R
E
A
C
T
A
N
C
E
C
OM
P
O
N
E
N
T
P
OS
I
T
I
V
E
R
E
A
C
T
A
N
C
E
CO
M
P
O
N
E
N
T
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
−JX
––––
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
4 8 12 16 20
S
21
0.2 GHz
1.2 GHz
0.05 GHz
0.1 GHz
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
0.05 0.11 0.15 0.2 0.25
S
12
S
12e
-FREQUENCY
CONDITION VCE = 10 V, IC = 5 mA, ZO = 50 Ω
CONDITION V
CE
= 10 V, IC = 5 mA
CONDITION V
CE
= 10 V, IC = 5 mA
1.2 GHz
1.2 GHz
0.2 GHz
0.2 GHz
0.1 GHz
0.1 GHz
0.05 GHz
S
11
S
22
0.2 GHz
1.2 GHz
0.1 GHz
0.05 GHz
5
2SC3841
[MEMO]
6
2SC3841
[MEMO]
7
2SC3841
[MEMO]
2SC3841
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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