NEC 2SC3841-VM, 2SC3841-T2B, 2SC3841-T1B, 2SC3841-L Datasheet
DATA SHEET
SILICON TRANSISTOR
2SC3841
UHF OSCILLATOR AND UHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10362EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1986©
DESCRIPTION
The 2SC3841 is an NPN silicon epitaxial transistor intended for use as
UHF oscillators and a UHF mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially recommendd
for Hybried Integrated Circuit and other applications.
FEATURES
• High Gain Bandwidth Procuct; fT = 4.0 GHz TYP.
• Low Collector to Base Time Constant; CC
r
b’b
= 4.0 ps TYP.
• Low Output Capacitance; C
ob
= 1.5 pF MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Maximum Voltages and Current
Collector to Base Voltage V
CBO
25 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3V
Collector Current I
C
30 mA
Maximum Power Dissipation
Total Power Dissipation P
T
200 mW
Maximum Power Temperutures
Junction Temperature T
j
150
C
Storage Temperature T
stg
55 to +150C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1
AVCB = 10 V, IE = 0
DC Current Gain h
FE
40 100 200 VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage V
CE(sat)
0.09 0.5 V IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product f
T
2.5 4.0 GHz VCE = 10 V, IE = 5.0 mA
Output Capacitance C
ob
0.85 1.5 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Collector to Base Time Constatnt CC
r
b’b
4.0 10.0 ps VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz
hFE Classification
Class T62/P * T63/Q * T64/R *
Marking T62 T63 T64
h
FE
40 to 80 60 to 120 100 to 200 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.21.1 to 1.4
0 to 0.1
0.950.3 0.95
0.4
+0.1
−0.05
0.4
+0.1
−0.05
0.16
+0.1
−0.06
0.65
+0.1
−0.15
2
2SC3841
TYPICAL CHARACTERISTICS (TA = 25
C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
h
FE
-DC Current Gain
0.1 0.2 0.5 1 2 5 10 20 400.05
20
10
5
50
100
200
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
f
T
-Gain Bandwidth Product-GHz
12 51020400.5
0.1
0.2
0.5
1
2
5
7
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
-Base to Emitter Voltage-V
I
C
-Collector Current-mA
0.6 0.7 0.8 0.9
0.5
1
2
5
10
20
50
70
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
|S
21e
|
2
-Insertion Gain-dB
12 5 1020400.5
0
5
10
15
VCE = 10 V
VCE = 10 V
VCE = 10 V
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
-Collector to Base Voltage-V
C
ob
-Output Capacitance pF
12 510200.5
2
1
3
f = 1.0 MHz
C
C
.
r
b'b
vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
C
C
.
r
b'b
-Collector to Base Time Constant-ps
0.5 1 2 5 10 20 400
4
2
6
8
10
VCE = 10 V
I
E
= −50 mA
f = 39.1 MHz
VCE = 10 V
f = 1.0 GHz
3
2SC3841
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
50
100
200
300
400
500
600
700
800
900
1000
1100
1200
1.047
0.944
0.750
0.562
0.468
0.394
0.372
0.359
0.343
0.339
0.320
0.339
0.351
3
18
56
84
106
123
138
150
164
172
178
170
168
14.240
13.693
10.802
8.270
6.449
5.399
4.421
3.824
3.388
3.020
2.692
2.483
2.291
178
164
137
118
105
97
89
83
77
73
67
64
61
0.003
0.026
0.058
0.078
0.091
0.106
0.120
0.133
0.146
0.158
0.172
0.188
0.204
42
81
66
59
58
58
59
59
58
59
59
59
59
1.012
0.989
0.759
0.582
0.484
0.417
0.343
0.309
0.288
0.292
0.279
0.279
0.279
3
10
30
39
40
45
44
48
53
54
61
57
61
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