Page 1
DATA SHEET
DATA SHEET
UHF OSCILLATOR AND UHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DESCRIPTION
The 2SC3841 is an NPN silicon epitaxial transistor intended for use as
UHF oscillators and a UHF mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially recommendd
for Hybried Integrated Circuit and other applications.
SILICON TRANSISTOR
2SC3841
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
+0.1
−0.05
0.4
1.5
0.65
+0.1
−0.15
FEATURES
• High Gain Bandwidth Procuct; fT = 4.0 GHz TYP.
b’b
r
= 4.0 ps TYP.
• Low Collector to Base Time Constant; CC
ob
• Low Output Capacitance; C
= 1.5 pF MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25
Maximum Voltages and Current
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
CBO
CEO
EBO
C
Maximum Power Dissipation
Total Power Dissipation P
T
Maximum Power Temperutures
Junction Temperature T
Storage Temperature T
j
stg
ELECTRICAL CHARACTERISTICS (TA = 25
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
DC Current Gain h
Collector Saturation Voltage V
Gain Bandwidth Product f
Output Capacitance C
Collector to Base Time Constatnt CC
CBO
FE
CE(sat)
T
ob
r
40 100 200 VCE = 10 V, IC = 5.0 mA
2.5 4.0 GHz VCE = 10 V, IE = 5.0 mA
b’b
2
2.9±0.21.1 to 1.4
C)
0.950.3 0.95
1
25 V
12 V
3V
30 mA
200 mW
150
55 to +150C
C)
0.09 0.5 V IC = 10 mA, IB = 1.0 mA
0.85 1.5 pF VCB = 10 V, IE = 0, f = 1.0 MHz
4.0 10.0 ps VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz
0.1
C
PIN CONNECTIONS
1.
Emitter
2.
Base
Collector
3.
AVCB = 10 V, IE = 0
0 to 0.1
3
Marking
+0.1
+0.1
−0.05
0.4
−0.06
0.16
hFE Classification
Class T62/P * T63/Q * T64/R *
Marking T62 T63 T64
FE
h
Document No. P10362EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
40 to 80 60 to 120 100 to 200 * Old Specification / New Specification
1986©
Page 2
2SC3841
TYPICAL CHARACTERISTICS (TA = 25
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
50
20
10
-DC Current Gain
FE
h
5
0.1 0.2 0.5 1 2 5 10 20 400.05
GAIN BANDWIDTH PRODUCT vs.
7
5
COLLECTOR CURRENT
VCE = 10 V
C
-Collector Current-mA
I
VCE = 10 V
C)
COLLECTOR CURRENT vs.
70
BASE TO EMITTER VOLTAGE
50
20
10
5
-Collector Current-mA
2
C
I
1
0.5
0.6 0.7 0.8 0.9
V
BE
INSERTION GAIN vs.
15
VCE = 10 V
COLLECTOR CURRENT
f = 1.0 GHz
VCE = 10 V
-Base to Emitter Voltage-V
2
1
0.5
-Gain Bandwidth Product-GHz
T
f
0.2
0.1
12 51020400.5
I
C
-Collector Current-mA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
2
1
-Output Capacitance pF
ob
C
12 510200.5
V
CB
-Collector to Base Voltage-V
f = 1.0 MHz
10
-Insertion Gain-dB
2
|
21e
5
|S
0
12 5 1020400.5
I
C
-Collector Current-mA
.
r
C
C
b'b
vs.
COLLECTOR CURRENT
10
8
6
4
2
-Collector to Base Time Constant-ps
b'b
r
.
C
C
0.5 1 2 5 10 20 400
I
C
-Collector Current-mA
VCE = 10 V
E
= −50 mA
I
f = 39.1 MHz
2
Page 3
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
50
100
200
300
400
500
600
700
800
900
1000
1100
1200
11
S
1.047
0.944
0.750
0.562
0.468
0.394
0.372
0.359
0.343
0.339
0.320
0.339
0.351
S
18
56
84
106
123
138
150
164
172
178
170
168
2SC3841
11
3
21
S
14.240
13.693
10.802
8.270
6.449
5.399
4.421
3.824
3.388
3.020
2.692
2.483
2.291
S
178
164
137
118
105
97
89
83
77
73
67
64
61
21
12
S
0.003
0.026
0.058
0.078
0.091
0.106
0.120
0.133
0.146
0.158
0.172
0.188
0.204
12
S
42
81
66
59
58
58
59
59
58
59
59
59
59
22
S
1.012
0.989
0.759
0.582
0.484
0.417
0.343
0.309
0.288
0.292
0.279
0.279
0.279
22
S
3
10
30
39
40
45
44
48
53
54
61
57
61
3
Page 4
S-PARAMETER
2SC3841
S
11e
, S
22e
-FREQUENCY
0.08
0.07
0.43
130
0.06
0.44
0.05
R
O
T
A
R
0.04
E
0.46
N
E
G
D
R
0.03
A
S
0.47
E
W
E
O
R
T
G
S
E
H
D
T
0.02
G
N
0.48
I
N
T
E
L
N
0.1
E
E
I
V
C
A
F
0.01
W
0.49
F
E
O
C
0
N
0
0
O
I
T
C
E
L
F
D
E
A
R
O
0.01
L
0.1
0.49
F
O
D
R
E
A
L
G
W
N
O
0.02
A
T
0.48
S
0.2
H
T
160
G
−
N
E
0.03
L
0.47
E
V
A
W
0.04
0.46
O
140
P
0.4
M
0.45
CO
E
C
N
A
T
)
C
0.3
150
A
O
E
+JX
R
––––
(
E
V
Z
I
T
I
OS
P
0.2
0.1
0.2
T
N
E
N
O
P
)
OM
O
C
E
0.3
C
(
150
−JX
––––
N
Z
−
A
T
C
A
E
R
IVE
0.4
0.05
140
−
0.45
0.06
130
0.44
−
0.07
0.43
CONDITION VCE = 10 V, IC = 5 mA, ZO = 50 Ω
0.13
0.42
0.5
N
E
N
T
A
G
0.5
120
T
0.3
NE
0.08
0.42
0.09
0.41
0.6
1.2 GHz
0.4
0.6
120
−
0.09
0.41
0.11
0.10
0.39
0.40
100
110
0.8
0.7
0.5
0.6
REACTANCE COMPONENT
S
11
0.7
0.8
110
−
0.10
0.40
0.12
0.9
0.7
0.8
––––
(
Z
0.9
100
−
0.11
0.39
0.37
0.38
90
1.0
0.2
0.9
1.0
R
0.2
)
O
1.2 GHz
1.0
−
90
0.12
0.38
0.14
0.15
0.36
0.35
80
70
1.2
1.4
0.4
0.6
0.8
1.0
1.0
0.8
0.6
0.4
0.2
1.2
1.4
1.6
1.8
2.0
S
0.4
22
0.6
0.8
1.0
1.0
0.8
0.6
0.4
0.2 GHz
0.2
1.4
−
70
1.2
−
80
0.15
0.14
0.35
0.13
0.36
0.37
0.16
0.34
0.33
0060
1.6
1.8
2.0
3.0
0.2 GHz
1.8
−
60
1.6
0.16
0.34
0.17
0.18
0.32
0.19
50
0.31
0.20
40
0.30
0.21
3.0
0.29
30
0.22
4.0
0.28
20
6.0
0.23
0.27
10
10
0.24
0.26
0.05 GHz
20
50
0.25
20
0.1 GHz
5.0
4.0
−30
0.20
0.30
0.31
0
50
0.24
20
−10
0.1 GHz
10
0.23
−20
0.22
0.28
0.21
0.29
0.25
0.26
0.27
10
4.0
5.0
3.0
−40
0.19
−50
2.0
0.18
0.32
0.17
0.33
180°
150°
−150°
21e
S
0.1 GHz
0.05 GHz
-FREQUENCY
120°
S
21
0.2 GHz
−120°
CONDITION V
90°
1.2 GHz
4 8 12 16 20
−90°
CE
= 10 V, IC = 5 mA
60°
−60°
30°
−30°
S
12e
-FREQUENCY
CONDITION V
CE
= 10 V, IC = 5 mA
90°
150°
120°
S
12
60°
1.2 GHz
30°
0.2 GHz
0°
180°
0.1 GHz
−150°
−120°
0.05 GHz
0.05 0.11 0.15 0.2 0.25
−60°
0°
−30°
−90°
4
Page 5
[MEMO]
2SC3841
5
Page 6
[MEMO]
2SC3841
6
Page 7
[MEMO]
2SC3841
7
Page 8
2SC3841
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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