NEC 2SC3809 Datasheet
DATA SHEET
SILICON TRANSISTOR
2SC3809
NPN SILICON EPITAXIAL TRANSISTOR
FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS
INDUSTRIAL USE
FEATURES
• The 2SC3809 is an NPN silicon epitaxial dual transistor having
a large-gain-bandwidth product performance in a wide operating
current range.
• Dual chips in one package can achieve high performance for
differential amplifiers and current mode logic (CML) circuits.
ABSOLUTE MAXIMUM RATINGS (TA = 25
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3V
Collector Current IC 100/unit mA
Total Power Dissipation PT 300/unit mW
Thermal Resistance (junction to case) Rth (j-c) 90/unit °C/W
Junction Temperature Tj 200 °C
Storage Temperature Tstg
°°
°C)
°°
-
65 to +200 °C
PACKAGE DIMENSIONS (in millimeters)
+0.3
5.0 MIN.
3.5
-
0.2
2
1
5.0 MIN.
0.6 ± 0.1
PIN CONNECTIONS
41
B
1
2
3
1
C
5
E
2
C
1.25 ± 0.1
0.03
+0.06
-
0.1
(#492C)
5.0 MIN.
3
4
5
0.6 ± 0.1
2.0 MAX.
B
2
ELECTRICAL CHARACTERISTICS (TA = 25
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector to Base Breakdown Voltage BVCBO IC = 100 µA20V
Emitter to Base Breakdown Voltage BVEBO IE = 100 µA, IC = 0 3 V
Collector to Emitter Breakdown Voltage
Collector Cut-off Current ICBO VCB = 10 V, IC = 0 1.0
Emitter Cut-off Current IEBO VEB = 1 V, IE = 0 1.0
DC Current Gain hFE VCE = 10 V, IC = 20 mA 50 250
hFE Ratio
Difference of Base to Emitter Voltage VBE (on) VCE = 10 V, IC = 20 mA 30 mV
Gain Bandwidth Product fT
Feedback Capacitance Cre
Notes 1. hFE1 is the smaller hFE value of the 2 transistors.
2. Measured using a single-type device (equivalent to the 2SC3603).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to
the guard terminal of the bridge.
Document No. P11697EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
BVCEO IC = 1 mA, RBE = ∞ 12 V
Note 1
hFE1/hFE2
Note 2
Note 3
°°
°C)
°°
µ
A
µ
A
VCE = 10 V, IC = 20 mA 0.6 1.0
VCE = 10 V, IC = 20 mA 6 7 GHz
VCB = 10 V, IE = 0, f = 1.0 MHz 0.75 1.0 pF
©
1996
2SC3809
REGARDING CLEANSING
Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.
If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration
at the metalized area of the transistor. You can use alcohol as a solvent.
Do not apply ultra-sonic-cleaning on this product.
TYPICAL CHARACTERISTICS (TA = 25
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
0.5
- Feedback Capacitance - pF
re
C
0.3
10
0.5 1 2 5 10 20 30 0.5 1 5 10 50
0
VCB - Collector to Base Voltage - V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
°°
°C)
°°
200
100
50
- DC Current Gain
FE
h
20
10
DC CURRENT GAIN vs.
COLLECTOR CURRENT
C
- Collector Current - mA
I
V
CE
= 10 V
5.0
3.0
2.0
1.0
0.5
0.3
0.2
- Gain Bandwidth Product - GHz
T
f
CE
= 10 V
V
0.1
0.5 1.0 5.0 10 30
0
I
C
- Collector Current - mA
2
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