NEC 2SC3604 Datasheet

DATA SHEET

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

2SC3604

The 2SC3604 is an NPN epitaxial transistor designed for low­noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.

FEATURES

• Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz

• High power gain: G

ABSOLUTE MAXIMUM RATINGS (TA = 25

PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65 mA
Total Power Dissipation PT (TC = 25 °C) 580 mW
Junction Temperature Tj 200 °C
Storage Temperature Tstg

A = 12 dB TYP. @ f = 2.0 GHz

°°

°C)

°°

-

65 to +150 °C

PACKAGE DIMENSIONS (in mm)

E

3.8 MIN.

3.8 MIN.

CB

E

2.55 ± 0.2

2.1

φ

3.8 MIN.

3.8 MIN.

0.5 ± 0.05

0.5 ± 0.05

45 °

PIN CONNECTIONS

E: Emitter
C: Collector
B: Base

0.55

1.8 MAX.

+0.06

-0.03

0.1

ELECTRICAL CHARACTERISTICS (TA = 25

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0
DC Current Gain hFE VCE = 8 V, IC = 20 mA Pulse 50 100 250
Gain Bandwidth Product fT VCE = 8 V, IC = 20 mA 8 GHz
Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz 0.2 0.7 pF
Noise Figure NF
Insertion Gain |S21e|2VCE = 8 V, IC = 20 mA, f = 2.0 GHz 9.0 11 dB
Maximum Available Gain MAG VCE = 8 V, IC = 20 mA, f = 2.0 GHz 13 dB
Power Gain GA VCE = 8 V, IC = 7 mA, f = 2.0 GHz 12 dB

Document No. P11675EJ2V0DS00 (2nd edition)
Date Published August 1996 P
Printed in Japan

Note

°°

°C)

°°

VCE = 8 V, IC = 7 mA, f = 2.0 GHz 1.6 2.3 dB

©

µ

A

µ

A

1996

Note Test block diagram

Coax. SW Coax. SW

Noise Diode

Stub

Tuner

Bias

Tee

Transistor

Under

Test

Bias

Tee

Post Amp Mixer

Network

Analyzer

2SC3604

NF Meter

Coax. SW

Sweeper

TYPICAL CHARACTERISTICS (TA = 25

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

0.8

0.6

0.4

0.2

- Total Power Dissipation - W

T

P

0

with heat sink

R

th(j−e)

90 °C/W

th(j−a)

R
590 °C/W

50 100

A

- Ambient Temperature - °C

T

150 0.1

°°

°C)

°°

*

To test 1 GHz or lower, insert a bandpass filter.

*

MAG AND INSERTION GAIN vs.
FREQUENCY

25

20

15

10

5

- Insertion Gain - dB

2

|

21e

0

MAG - Maximum Available Gain - dB

|S

−5

0.2 0.5 1
f - Frequency - GHz

MAG

|S

21e

2

|

CE

= 8 V

V
I

C

= 20 mA

2510200

REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

3

2

1

0.7

0.5

0.3

0.2

- Reverse Transfer Capacitance - pF

re

C

0.1
1235

V

CB

- Collector to Base Voltage -V

2

f = 1.0 MHz

710 2030

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

100

50

- DC Current Gain

FE

h

20

10

0.5 1 5
I

C

- Collector Current - mA

V

CE

= 8 V

10 50

2SC3604

INSERTION GAIN vs.

15

10

- Insertion Gain - dB

2

5

|

21e

|S

V

CE

0

0.5 1

30
20

COLLECTOR CURRENT

= 8 V

IC - Collector Current - mA

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

f = 2 GHz

5

10 50 70

V

CE

= 8 V

3 GHz

4 GHz

NOISE FIGURE vs. COLLECTOR CURRENT

6

5

4

3

NF - Noise Figure -dB

2

1

2 5 10 20 50

IC - Collector Current - mA

VCE = 8 V
f = 2 GHz

10

7
5

3

2

- Gain Bandwidth Product - GHz

T

f

12357102030

IC - Collector Current - mA

S PARAMETER

CE = 6 V, IC = 10 mA, ZO = 50 Ω

V

f (MHz) |S

500 .463

1000 .432

11| ∠S11 |S21| ∠S21 |S12| ∠S12 |S22| ∠S22

-

125.3 13.822 106.8 .027 37.9 .516

-

162.7 7.901 86.2 .0424 48.2 .463
1500 .416 178.7 5.250 71.1 .0606 53.1 .421
2000 .439 165.0 3.949 59.7 .0758 52.0 .396
2500 .451 153.6 3.151 51.7 .097 49.3 .372
3000 .470 143.6 2.809 39.6 .111 45.1 .345
3500 .482 135.2 2.337 28.6 .124 39.5 .320
4000 .494 129.1 2.022 21.3 .132 35.5 .321

-

-

-

-

-

-

-

-

36.6

40.7

46.2

50.9

56.5

63.7

73.2

82.0

3