NEC 2SC3603 Datasheet

DATA SHEET

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

2SC3603

The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES

• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz

• High power gain: G

ABSOLUTE MAXIMUM RATINGS (TA = 25

PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3V Collector Current IC 100 mA Total Power Dissipation PT (TC = 25 °C) 580 mW Junction Temperature Tj 200 °C Storage Temperature Tstg

A = 10 dB TYP. @ f = 2.0 GHz

°°

°C)

°°

-

65 to +150 °C

PACKAGE DIMENSIONS (in mm)

E

3.8 MIN.

CB

E

2.55 ± 0.2

2.1

φ

3.8 MIN.

0.5 ± 0.05

45 °

PIN CONNECTIONS

E: Emitter C: Collector B: Base

0.55

1.8 MAX.

+0.06

-0.03

0.1

ELECTRICAL CHARACTERISTICS (TA = 25

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0 Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0 DC Current Gain hFE VCE = 10 V, IC = 20 mA Pulse 50 120 300 Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7 GHz Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz 0.5 1.0 pF Noise Figure NF Insertion Gain |S21e|2VCE = 10 V, IC = 20 mA, f = 2 GHz 7.0 9.0 dB Maximum Available Gain MAG VCE = 10 V, IC = 20 mA, f = 2 GHz 10.0 12.0 dB Power Gain GA VCE = 10 V, IC = 7 mA, f = 2 GHz 10 dB

Document No. P11674EJ1V0DS00 (1st edition) Date Published August 1996 P Printed in Japan

Note

°°

°C)

°°

VCE = 10 V, IC = 7 mA, f = 2 GHz 2.1 3.4 dB

©

µ

A

µ

A

1996

Note Test block diagram

Coax. SW Coax. SW

Noise Diode

Stub

Tuner

Bias

Tee

Transistor

Under

Test

Bias

Tee

Post Amp Mixer

Network

Analyzer

2SC3603

NF Meter

Coax. SW

Sweeper

TYPICAL CHARACTERISTICS (TA = 25

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

0.8

0.6

0.4

0.2

- Total Power Dissipation - W

T

P

0

with heat sink

R

th(j−e)

90 °C/W

R

th(j−a)

590 °C/W

50 100

A

- Ambient Temperature - °C

T

150 0.1

°°

°C)

°°

*

To test 1 GHz or lower, insert a bandpass filter.

*

MAG AND INSERTION GAIN vs. FREQUENCY

25

20

15

10

5

- Insertion Gain - dB

2

|

21e

0

MAG - Maximum Available Gain - dB

|S

−5

0.2 0.5 1

MAG

2

|S

21e

|

f - Frequency - GHz

CE

= 10 V

V I

C

= 20 mA

2510200

REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE

3

2

1

0.7

0.5

0.3

0.2

- Reverse Transfer Capacitance - pF

re

C

0.1 1235

V

CB

- Collector to Base Voltage -V

2

f = 1.0 MHz

710 2030

DC CURRENT GAIN vs. COLLECTOR CURRENT

200

100

50

- DC Current Gain

FE

h

20

10

0.5 1 5 I

C

- Collector Current - mA

VCE = 10 V

10 50

2SC3603

INSERTION GAIN vs. COLLECTOR CURRENT

VCE = 10 V

20 18 16 14 12 10

8

- Insertion Gain - dB

2

|

6

21e

|S

4 2

0

12 5

IC - Collector Current - mA

GAIN BANDWIDTH PRODUCT vs. 30 20

COLLECTOR CURRENT

f = 0.5 GHz

f = 1 GHz

f = 2 GHz

10 20 50

VCE = 10 V

NOISE FIGURE vs. COLLECTOR CURRENT

6

5

4

3

NF - Noise Figure -dB

2

1

2 5 10 20 50

IC - Collector Current - mA

VCE =10 V f = 2 GHz

10

7 5

3

2

- Gain Bandwidth Product - GHz

T

f

12357102030

IC - Collector Current - mA

S PARAMETER

CE = 10 V, IC = 20 mA, ZO = 50 Ω

V

f (MHz) |S

500 .629

11| ∠S11 |S21| ∠S21 |S12| ∠S12 |S22| ∠S22

-

160.8 10.100 92.6 .040 41.5 .256 1000 .631 175.8 5.411 75.1 .048 51.4 .244 1500 .628 162.5 3.565 60.6 .070 59.2 .232 2000 .646 152.2 2.720 48.4 .086 56.0 .220 2500 .659 142.1 2.161 38.8 .105 52.2 .213 3000 .677 132.0 1.916 25.7 .127 45.1 .217 3500 .695 123.8 1.585 14.3 .151 39.7 .232 4000 .713 116.5 1.392 5.3 .168 34.8 .254

-

103.1

-

119.5

-

134.0

49.0

57.2

66.8

77.4

89.1

3