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DATA SHEET
SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
2SC3603
The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain: G
ABSOLUTE MAXIMUM RATINGS (TA = 25
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3V
Collector Current IC 100 mA
Total Power Dissipation PT (TC = 25 °C) 580 mW
Junction Temperature Tj 200 °C
Storage Temperature Tstg
A = 10 dB TYP. @ f = 2.0 GHz
°°
°C)
°°
-
65 to +150 °C
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
3.8 MIN.
CB
E
2.55 ± 0.2
2.1
φ
3.8 MIN.
3.8 MIN.
0.5 ± 0.05
0.5 ± 0.05
45 °
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.55
1.8 MAX.
+0.06
-0.03
0.1
ELECTRICAL CHARACTERISTICS (TA = 25
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0
DC Current Gain hFE VCE = 10 V, IC = 20 mA Pulse 50 120 300
Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7 GHz
Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz 0.5 1.0 pF
Noise Figure NF
Insertion Gain |S21e|2VCE = 10 V, IC = 20 mA, f = 2 GHz 7.0 9.0 dB
Maximum Available Gain MAG VCE = 10 V, IC = 20 mA, f = 2 GHz 10.0 12.0 dB
Power Gain GA VCE = 10 V, IC = 7 mA, f = 2 GHz 10 dB
Document No. P11674EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
Note
°°
°C)
°°
VCE = 10 V, IC = 7 mA, f = 2 GHz 2.1 3.4 dB
©
µ
A
µ
A
1996
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Note Test block diagram
Coax. SW Coax. SW
Noise Diode
Stub
Tuner
Bias
Tee
Transistor
Under
Test
Bias
Tee
Post Amp Mixer
Network
Analyzer
2SC3603
NF Meter
Coax. SW
Sweeper
TYPICAL CHARACTERISTICS (TA = 25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.8
0.6
0.4
0.2
- Total Power Dissipation - W
T
P
0
with heat sink
R
th(j−e)
90 °C/W
R
th(j−a)
590 °C/W
50 100
A
- Ambient Temperature - °C
T
150 0.1
°°
°C)
°°
*
To test 1 GHz or lower, insert a bandpass filter.
*
MAG AND INSERTION GAIN vs.
FREQUENCY
25
20
15
10
5
- Insertion Gain - dB
2
|
21e
0
MAG - Maximum Available Gain - dB
|S
−5
0.2 0.5 1
MAG
2
|S
21e
|
f - Frequency - GHz
CE
= 10 V
V
I
C
= 20 mA
2510200
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
2
1
0.7
0.5
0.3
0.2
- Reverse Transfer Capacitance - pF
re
C
0.1
1235
V
CB
- Collector to Base Voltage -V
2
f = 1.0 MHz
710 2030
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
50
- DC Current Gain
FE
h
20
10
0.5 1 5
I
C
- Collector Current - mA
VCE = 10 V
10 50
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2SC3603
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
20
18
16
14
12
10
8
- Insertion Gain - dB
2
|
6
21e
|S
4
2
0
12 5
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
30
20
COLLECTOR CURRENT
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
10 20 50
VCE = 10 V
NOISE FIGURE vs. COLLECTOR CURRENT
6
5
4
3
NF - Noise Figure -dB
2
1
2 5 10 20 50
IC - Collector Current - mA
VCE =10 V
f = 2 GHz
10
7
5
3
2
- Gain Bandwidth Product - GHz
T
f
12357102030
IC - Collector Current - mA
S PARAMETER
CE = 10 V, IC = 20 mA, ZO = 50 Ω
V
f (MHz) |S
500 .629
11| ∠S11 |S21| ∠S21 |S12| ∠S12 |S22| ∠S22
-
160.8 10.100 92.6 .040 41.5 .256
1000 .631 175.8 5.411 75.1 .048 51.4 .244
1500 .628 162.5 3.565 60.6 .070 59.2 .232
2000 .646 152.2 2.720 48.4 .086 56.0 .220
2500 .659 142.1 2.161 38.8 .105 52.2 .213
3000 .677 132.0 1.916 25.7 .127 45.1 .217
3500 .695 123.8 1.585 14.3 .151 39.7 .232
4000 .713 116.5 1.392 5.3 .168 34.8 .254
-
-
-
-
-
-
103.1
-
119.5
-
134.0
49.0
57.2
66.8
77.4
89.1
3