NEC 2SC3587 Datasheet

DATA SHEET

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

2SC3587

The 2SC3587 is an NPN epitaxial transistor designed for low­noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.

FEATURES

• Low noise : NF = 1.7 dB TYP. @ f = 2 GHz

NF = 2.6 dB TYP. @ f = 4 GHz

• High power gain: GA = 12.5 dB TYP. @ f = 2 GHz

A = 8.0 dB TYP. @ f = 4 GHz

G

ABSOLUTE MAXIMUM RATINGS (TA = 25

PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT (TC = 25 °C) 580 mW
Junction Temperature Tj 200 °C
Storage Temperature Tstg

°°

°C)

°°

-

65 to +150 °C

PACKAGE DIMENSIONS (in mm)

E

3.8 MIN.

3.8 MIN.

CB

E

2.55 ± 0.2

2.1

φ

3.8 MIN.

3.8 MIN.

0.5 ± 0.05

0.5 ± 0.05

45 °

PIN CONNECTIONS

E: Emitter
C: Collector
B: Base

0.55

1.8 MAX.

+0.06

-0.03

0.1

ELECTRICAL CHARACTERISTICS (TA = 25

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V 1.0
Emitter Cut-off Current IEBO VEB = 1 V 1.0
DC Current Gain hFE VCE = 6 V, IC = 10 mA Pulse 50 100 250
Gain Bandwidth Product fT VCE = 6 V, IC = 10 mA 10.0 GHz
Reverse Transfer Capacitance Cre VCB = 10 V, f = 1 MHz 0.2 0.7 pF
Noise Figure NF

Insertion Gain |S21e|2VCE = 6 V, IC = 10 mA f = 2 GHz 10.5 12.5 dB

Maximum Available Gain MAG VCE = 6 V, IC = 10 mA, f = 4 GHz 10 dB
Power Gain GA VCE = 6 V, IC = 5 mA f = 2 GHz 12.5 dB

Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan

Note

°°

°C)

°°

VCE = 6 V, IC = 5 mA f = 2 GHz 1.7 2.4 dB

f = 4 GHz 2.6 dB

f = 4 GHz 7.5 dB

f = 4 GHz 8.0 dB

©

µ

A

µ

A

1996

Note Test block diagram

Coax. SW Coax. SW

Noise Diode

Stub

Tuner

Bias

Tee

Transistor

Under

Test

Bias

Tee

Post Amp Mixer

Network

Analyzer

2SC3587

NF Meter

Coax. SW

Sweeper

TYPICAL CHARACTERISTICS (TA = 25

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

0.8

0.6

0.4

0.2

- Total Power Dissipation - W

T

P

0

with heat sink

R

th(j−e)

90 °C/W

th(j−a)

R
590 °C/W

50 100

A

- Ambient Temperature - °C

T

150 0.1

°°

°C)

°°

*

To test 1 GHz or lower, insert a bandpass filter.

*

MAG AND INSERTION GAIN vs.
FREQUENCY

25

20

15

10

5

- Insertion Gain - dB

2

|

21e

0

MAG - Maximum Available Gain - dB

|S

−5

0.2 0.5 1
f - Frequency - GHz

MAG

|S

21e

2

|

CE

= 6 V

V
I

C

= 10 mA

2510200

REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

3

2

1

0.7

0.5

0.3

0.2

- Reverse Transfer Capacitance - pF

re

C

0.1
1235

V

CB

- Collector to Base Voltage -V

2

f = 1.0 MHz

710 2030

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

100

50

- DC Current Gain

FE

h

20

10

0.5 1 5
I

C

- Collector Current - mA

V

CE

= 6 V

10 50

2SC3587

INSERTION GAIN vs.

15

10

- Insertion Gain - dB

2

5

|

21e

|S

V

CE

0

0.5 1

30
20

COLLECTOR CURRENT

= 6 V

IC - Collector Current - mA

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

f = 2 GHz

5

10 50 70

V

CE

3 GHz

4 GHz

= 6 V

NOISE FIGURE vs. COLLECTOR CURRENT

6

5

4

3

NF - Noise Figure -dB

2

1

2 5 10 20 50

IC - Collector Current - mA

VCE = 6 V

f = 4 GHz

f = 2 GHz

10

7
5

3

2

- Gain Bandwidth Product - GHz

T

f

12357102030

IC - Collector Current - mA

S PARAMETER

CE = 6 V, IC = 10 mA, ZO = 50 Ω

V

f (MHz) |S

500 .466
1000 .322
1500 .271
2000 .256

11| ∠S11 |S21| ∠S21 |S12| ∠S12 |S22| ∠S22

-

82.1 13.209 120.8 .0288 50.9 .634

-

123.8 8.371 95.7 .0424 54.2 .610

-

153.7 5.672 78.7 .0561 54.5 .579

-

176.6 4.304 66.9 .0697 54.1 .549
2500 .262 167.3 3.456 58.6 .0848 51.9 .531
3000 .270 152.0 3.095 46.1 .0955 48.0 .507
3500 .294 142.0 2.595 35.0 .106 43.2 .498
4000 .327 129.7 2.231 27.6 .127 35.2 .500

-

-

-

-

-

-

-

-

25.0

29.4

33.5

38.7

46.2

52.8

61.0

68.4

3