Page 1
DATA SHEET
SILICON POWER TRANSISTOR
2SC3569
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SC3569 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
V
= 1.0 V MAX. (@ 0.7 A)
CE(sat)
• Fast switching speed:
t
≤ 1.0 µs MAX. (@ 0.7 A)
f
• Wide base reverse-bias SOA:
VCEX(SUS)
= 450 V MIN. (@ 0.5 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
(Tc = 25°C)
P
Total power dissipation
Total power dissipation
Junction temperature T
Storage temperature T
T
(Ta = 25°C)
P
T
*PW ≤ 300 µs, duty cycle ≤ 10%
CBO
CEO
EBO
C(DC)
*4.0A
C(pulse)
B(DC)
j
stg
500 V
400 V
7.0 V
2.0 A
1.0 A
15 W
2.0 W
150
−55 to +150 °C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16187EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998©
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage V
Collector to emitter voltage V
Collector to emitter voltage V
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Turn-on time t
Storage time t
Fall time t
CEO(SUS)IC
CEX(SUS)1
CEX(SUS)2
CBO
CER
CEX1
CEX2
EBO
FE1
FE2
CE(sat)
BE(sat)
on
stg
f
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
= 0.5 A, IB1 = 0.1 A, L = 1 mH 400 V
IC = 0.5 A, IB1 = −IB2 = 0.1 A,
L = 180
H, clamped
µ
IC = 1.0 A, IB1 = 0.2 A, −IB2 = 0.1 A,
L = 180
H, clamped
µ
VCB = 400 V, IE = 0 10
VCE = 400 V, RBE = 51 Ω, Ta = 125°C
VCE = 400 V, V
VCE = 400 V, V
BE(OFF)
BE(OFF)
Ta = 125°C
VEB = 5.0 V, IC = 0 10
*VCE = 5.0 V, IC = 0.2 A 20 80
*VCE = 5.0 V, IC = 0.5 A 10
*IC = 0.7 A, IB = 0.14 A 1.0 V
*IC = 0.7 A, IB = 0.14 A 1.2 V
IC = 0.7 A, RL = 214 Ω,
I
= −IB2 = 0.14 A, VCC ≅ 150 V
B1
Refer to the test circuit.
= −1.5 V
= −1.5 V,
450 V
400 V
1.0 mA
10
1.0 mA
1.0
2.5
1.0
2SC3569
A
µ
A
µ
A
µ
s
µ
s
µ
s
µ
hFE CLASSIFICATION
Marking M L K
H
FE1
20 to 40 30 to 60 40 to 80
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
(W)
T
Total Power Dissipation P
Case Temperature TC (°C)
(mA)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
2
Data Sheet D16187EJ1V0DS
Page 3
2SC3569
C/W)
°
(
th(j-c)
Ta = 25°C (without heatsink)
Derating dT (%)
C
I
(with infinite heatsink)
Case Temperature TC (°C)
Transient Thermal Resistance R
Pulse Width PW (s)
(A)
(A)
C
C
Collector Current I
Collector Current I
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
(V)
(V)
CE(sat)
FE
BE(sat)
DC Current Gain h
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (mA)
Data Sheet D16187EJ1V0DS
Collector Current IC (mA)
3
Page 4
2SC3569
µ
s)
s)
µ
µ
s)
(
(
on
stg
(
f
Fall Time t
StorageTime t
Turn-On Time t
Collector Current IC (A)
Base current
wavefor m
Collector current
wavefor m
4
Data Sheet D16187EJ1V0DS
Page 5
[MEMO]
2SC3569
Data Sheet D16187EJ1V0DS
5
Page 6
2SC3569
•
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M8E 00. 4
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