NEC 2SC3545-VM, 2SC3545-T2B, 2SC3545-T1B, 2SC3545-L Datasheet
DATA SHEET
SILICON TRANSISTOR
2SC3545
UHF OSCILLATOR AND MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10358EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1984©
DESCRIPTION
The 2SC3545 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially
recommended for Hybrid Integrated Circuit and other applications.
FEATURES
• High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
• Low Collector to Base Time Constant; CC
r
b’b
= 4 ps TYP.
• Low Feedback Capacitance; C
re
= 0.48 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Maximum Voltages and Current
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
15 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
50 mA
Maximum Power Dissipation
Total Power Dissipation P
T
150 mW
Maximum Temperature
Junction Temperature T
j
125
C
Storage Temperature T
stg
65 to +125C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1
AVCB = 12 V, IE = 0
DC Current Gain h
FE
50 100 250 VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage V
CE(sat)
0.5 V IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product f
T
1.3 2.0 MHz VCE = 10 V, IE = 5.0 mA
Output Capacitance C
ob
0.48 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Collector to Base Time Constant CC
r
b’b
410psV
CE
= 10 V, IE = 5.0 mA, f = 31.9 MHz
hFE Classification
Class M/P * L/Q * K/R *
Marking T42 T43 T44
h
FE
50 to 100 70 to 140 120 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.21.1 to 1.4
0 to 0.1
0.950.3 0.95
0.4
+0.1
−0.05
0.4
+0.1
−0.05
0.16
+0.1
−0.06
0.65
+0.1
−0.15
2
2SC3545
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
100
50
150
200
250
0
10
20
50
100
200
5025
1 5 10 500.5
75 125100
T
A
-Ambient Temperature-°C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-Wh
FE
-DC Current Gain
VCE = 10 V
0
5
10
15
0.5 1 5 10 50 70
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
G
max
-Maximum Available Gain-dB
|S
21e
|
2
-Insertion Gain-dB
VCE = 10 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
123 75102030
V
CB
-Collector to Base Voltage-V
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.1 0.5 1.0 105.0 30
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
VCE = 10 V
0
5
10
15
0.5 1 5 10 50 70
I
C
-Collector Current-mA
COLLECTOR TO BASE TIME CONSTANT
vs. COLLECTOR CURRENT
C
C
.
r
b'b
-Collector to Base Time Constant-ps
VCE = 10 V
f = 31.9 MHz
Free air
MAG
|S
21e
|
2
3
2SC3545
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
0.472
0.310
0.261
0.262
0.270
0.288
0.323
0.356
80.6
117.3
139.9
160.4
176.6
172.3
162.4
151.0
7.581
4.029
2.926
2.118
1.860
1.504
1.413
1.201
114.1
92.9
81.7
70.2
62.8
54.4
47.9
40.9
0.037
0.055
0.077
0.098
0.108
0.125
0.148
0.160
60.2
55.5
60.2
62.8
64.6
65.7
66.4
68.0
0.780
0.723
0.721
0.698
0.691
0.688
0.664
0.658
8.2
15.1
18.8
22.6
25.1
30.7
35.1
39.3
VCE = 10 V, IC = 10 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
0.323
0.246
0.247
0.273
0.299
0.314
0.353
0.380
101.4
136.2
158.8
173.7
172.6
162.7
154.5
144.7
8.735
4.383
3.120
2.259
1.968
1.589
1.483
1.257
104.9
87.4
78.0
67.2
60.1
52.5
46.3
39.5
0.037
0.052
0.074
0.086
0.102
0.126
0.146
0.166
49.5
65.2
67.3
68.2
69.4
70.1
70.4
70.3
0.711
0.693
0.696
0.679
0.671
0.663
0.648
0.648
8.5
13.8
16.8
20.0
23.8
26.6
33.7
38.5
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