Page 1
DATA SHEET
DATA SHEET
UHF OSCILLATOR AND MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DESCRIPTION
The 2SC3545 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially
recommended for Hybrid Integrated Circuit and other applications.
SILICON TRANSISTOR
2SC3545
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
+0.1
−0.05
0.4
1.5
0.65
+0.1
−0.15
FEATURES
• High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
b’b
r
= 4 ps TYP.
CBO
FE
CE(sat)
T
ob
r
C)
CBO
CEO
EBO
C
T
j
stg
50 100 250 VCE = 10 V, IC = 5.0 mA
1.3 2.0 MHz VCE = 10 V, IE = 5.0 mA
b’b
• Low Collector to Base Time Constant; CC
re
• Low Feedback Capacitance; C
= 0.48 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25
Maximum Voltages and Current
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Maximum Power Dissipation
Total Power Dissipation P
Maximum Temperature
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS (TA = 25
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
DC Current Gain h
Collector Saturation Voltage V
Gain Bandwidth Product f
Output Capacitance C
Collector to Base Time Constant CC
2
2.9±0.21.1 to 1.4
0.950.3 0.95
1
30 V
15 V
3.0 V
50 mA
150 mW
125
65 to +125C
C
PIN CONNECTIONS
1.
Emitter
2.
Base
3.
Collector
C)
0.1
0.5 V IC = 10 mA, IB = 1.0 mA
0.48 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
410psV
AVCB = 12 V, IE = 0
CE
= 10 V, IE = 5.0 mA, f = 31.9 MHz
3
Marking
0 to 0.1
+0.1
+0.1
−0.05
0.4
−0.06
0.16
hFE Classification
Class M/P * L/Q * K/R *
Marking T42 T43 T44
FE
h
Document No. P10358EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
50 to 100 70 to 140 120 to 250 * Old Specification / New Specification
1984©
Page 2
2SC3545
TYPICAL CHARACTERISTICS (TA = 25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Free air
250
200
150
100
-Total Power Dissipation-Wh
T
P
50
200
0
5025
A
-Ambient Temperature-°C
T
DC CURRENT GAIN vs.
COLLECTOR CURRENT
75 125100
VCE = 10 V
C)
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
f = 1.0 MHz
2
1
0.7
0.5
0.3
-Feed-back Capacitance-pF
re
C
0.2
0.1
123 75102030
CB
-Collector to Base Voltage-V
V
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
15
VCE = 10 V
f = 1.0 GHz
100
50
-DC Current Gain
FE
20
10
1 5 10 500.5
C
-Collector Current-mA
I
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
1.0
0.5
0.3
-Gain Bandwidth Product-MHz
T
f
0.2
VCE = 10 V
0.1
0.1 0.5 1.0 105.0 30
C
-Collector Current-mA
I
MAG
10
|S
21e
5
-Insertion Gain-dB
2
|
-Maximum Available Gain-dB
21e
max
|S
G
0
0.5 1 5 10 50 70
C
-Collector Current-mA
I
COLLECTOR TO BASE TIME CONSTANT
vs. COLLECTOR CURRENT
15
10
5
-Collector to Base Time Constant-ps
VCE = 10 V
b'b
r
.
C
f = 31.9 MHz
C
0
0.5 1 5 10 50 70
C
-Collector Current-mA
I
2
|
2
Page 3
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
11
S
0.472
0.310
0.261
0.262
0.270
0.288
0.323
0.356
117.3
139.9
160.4
176.6
172.3
162.4
151.0
S
80.6
2SC3545
11
21
S
7.581
114.1
4.029
2.926
2.118
1.860
1.504
1.413
1.201
S
92.9
81.7
70.2
62.8
54.4
47.9
40.9
21
12
S
0.037
0.055
0.077
0.098
0.108
0.125
0.148
0.160
S
60.2
55.5
60.2
62.8
64.6
65.7
66.4
68.0
12
22
S
0.780
0.723
0.721
0.698
0.691
0.688
0.664
0.658
S
8.2
15.1
18.8
22.6
25.1
30.7
35.1
39.3
22
VCE = 10 V, IC = 10 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
11
S
0.323
0.246
0.247
0.273
0.299
0.314
0.353
0.380
101.4
136.2
158.8
173.7
172.6
162.7
154.5
144.7
S
11
21
S
8.735
104.9
4.383
3.120
2.259
1.968
1.589
1.483
1.257
S
87.4
78.0
67.2
60.1
52.5
46.3
39.5
21
12
S
0.037
0.052
0.074
0.086
0.102
0.126
0.146
0.166
S
49.5
65.2
67.3
68.2
69.4
70.1
70.4
70.3
12
22
S
0.711
0.693
0.696
0.679
0.671
0.663
0.648
0.648
S
8.5
13.8
16.8
20.0
23.8
26.6
33.7
38.5
22
3
Page 4
S-PARAMETER
2SC3545
S11e, S22e-FREQUENCY
0.07
0.43
130
0.06
0.44
0.05
140
0.4
M
0.45
R
O
T
A
R
0.04
E
0.46
N
E
G
D
R
0.03
A
0.47
W
E
O
R
T
G
S
E
H
D
T
0.02
G
N
0.48
I
N
T
E
L
N
E
E
I
V
C
A
F
0.01
W
0.49
F
E
O
C
N
0
0
O
I
T
C
E
L
F
D
E
A
R
O
0.01
L
0.1
0.49
F
O
D
R
E
A
L
G
W
N
O
0.02
A
T
0.48
S
H
T
G
N
E
0.03
0.47
0.46
CO
E
C
N
A
T
)
C
0.3
150
A
O
E
+JX
R
––––
(
E
V
Z
I
T
I
S
E
OS
P
0.2
0.1
0
0.1
0.2
T
0.2
N
160
E
−
N
O
P
L
E
)
OM
V
O
A
C
E
W
0.3
C
150
−JX
N
−
0.04
A
T
C
A
E
R
0.4
0.05
140
−
0.45
0.06
0.44
0.07
0.43
0.08
––––
130
VCE = 10 V, 200 MHz StepCONDITION
0.13
0.12
0.11
0.10
0.39
0.40
0.09
0.41
0.42
120
0.5
T
N
E
N
O
P
100
110
0.9
0.8
0.7
0.6
1.6 GHz
0.3
0.4
0.5
0.6
0.7
0.8
REACTANCE COMPONENT
––––
(
S11e
(
Z
IVE
T
A
G
NE
0.5
−
0.6
120
−
0.08
0.42
0.41
Z
IC = 5 mA
C = 10 mA
I
0.7
0.8
110
0.9
−
0.09
100
−
0.10
0.11
0.40
0.39
0.38
R
O
90
1.0
0.9
1.0
)
1.0
0.12
0.38
0.37
0.2
0.4
0.6
0.6
0.4
0.2
1.2
0.2
0.4
0.6
0.8
0.2 GHz
0.6
0.4
0.2
−
90
0.13
0.37
0.14
0.15
0.36
80
1.2
0.8
0.8
1.4
1.2
0.16
0.35
0.34
0.17
70
0.33
0.18
0060
1.4
1.0
1.0
1.6
1.8
2.0
1.0
1.0
0.8
1.4
70
−
80
0.15
0.14
0.36
1.6
1.8
3.0
1.6 GHz
1.8
60
1.6
−
0.16
0.34
0.35
50
2.0
4.0
5.0
0.2 GHz
2.0
−
0.17
0.33
0.32
0.19
0.31
0.20
40
0.30
0.21
3.0
0.29
30
0.22
4.0
0.28
20
6.0
0.23
0.27
10
10
0.24
0.26
20
50
0.25
0.25
20
0
50
0.24
20
0.26
−10
10
0.23
0.27
−20
0.22
5.0
0.28
4.0
−30
0.21
0.29
0.20
0.30
0.31
−50
S22e
0.18
10
3.0
−40
0.19
0.32
21e-FREQUENCY
S
150°
180°
−150°
120°
−120°
0.2 GHz
S21e
IC = 5 mA
I
C = 10 mA
CE = 10 V, 200 MHz StepCONDITION
V
90°
60°
1.6 GHz
20 4 6 810
−60°
−90°
30°
−30°
S12e-FREQUENCY
150°
180°
0°
−150°
120°
−120°
IC = 5 mA
I
C = 10 mA
V
CE = 10 V, 200 MHz StepCONDITION
90°
1.6 GHz
S12e
0.2 GHz
0.050 0.1 0.15 0.2 0.25
−90°
60°
30°
0°
−30°
−60°
4
Page 5
[MEMO]
2SC3545
5
Page 6
[MEMO]
2SC3545
6
Page 7
[MEMO]
2SC3545
7
Page 8
2SC3545
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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