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DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
FEATURES
•Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
•Large PT in Small Package
T
P
: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation PT* 1.2 W
Thermal Resistance R
Junction Temperature T
Storage Temperature T
* mounted on 16 cm
CBO
CEO
EBO
C
th(j-a)
* 62.5 °C/W
j
stg
20 V
12 V
3.0 V
100 mA
150 °C
65 to +150 °C
−
2
× 0.7 mm Ceramic Substrate
SILICON TRANSISTOR
2SC3357
PACKAGE DIMENSIONS
EB
0.42
±0.06
0.8 MIN.
(Unit: mm)
4.5±0.1
1.6±0.2
C
0.42±0.06
1.5
0.47
±0.06
3.0
Term, Connection
E
: Emitter
C
: Collector (Fin)
B
: Base
(SOT-89)
2.5±0.1
1.5±0.1
4.0±0.25
0.41
−0.03
+0.05
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1985©
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2SC3357
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
µ
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
1.0
1.0
DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product f
T
6.5 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre** 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
2
21
S
Insertion Power Gain
e
9dBV
Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz
* Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
FE
Classification
h
Class RH RF RE
Marking RH RF RE
FE
h
50 to 100 80 to 160 125 to 250
A
CB
= 10 V, IE = 0
V
µ
A
EB
= 1.0 V, IC = 0
V
CE
= 10 V, IC = 20 mA, f = 1.0 GHz
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.0
Ceramic Substrate
2
16 cm
× 0.7 mm
1.0
-Total Power Dissipation-W
T
P
Free Air
0 50 100 150
th(j-a)
312.5 ˚C/W
R
T
A
-Ambient Temperature-°C
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
0.5
-Feed-back Capacitance-pF
re
C
0.3
0 0.5 1 2 5 10 20 30
V
CB
-Collector to Base Voltage-V
2
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2SC3357
200
100
50
hFE-DC Current Gain
20
10
1 5 10 500.5
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
DC CURRENT GAIN vs.
COLLECTOR CURRENT
C-Collector Current-mA
I
VCE = 10 V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
10
-Insertion Gain-dB
2
5
|S21e|
0
0.5 1 5 10 50 70
I
C-Collector Current-mA
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
Gmax
20
2
|S21e|
VCE = 10 V
f = 1.0 GHz
1.0
0.5
0.3
0.2
fT-Gain Bandwidth Product-MHz
VCE = 10 V
0.1
0 0.5 10 105.0 30
C-Collector Current-mA
I
NOISE FIGURE vs.
7
6
COLLECTOR CURRENT
VCE = 10 V
f = 1.0 GHz
5
4
3
2
NF-Noise Figure-dB
0
0.5 1 5 10 50 70
C-Collector Current-mA
I
10
-Insertion Gain-dB
2
21e|
Gmax-Maximum Gain-dB
|S
VCE = 10 V
C = 20 mA
I
0
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
−80
−70
−60
IM2, IM3 (dB)
−50
−40
−30
20 30
0.1 0.2 0.4 0.6 0.81.0
f-Frequency-GHz
IM3
IM2
VCE = 10 V
0 = 100 dB V/50 Ω
V
at
R
g = Re = 50 Ω
IM2
f = 90 + 100 MHz
f = 2 × 200 − 190 MHz
IM3
µ
40 6050 70
I
C-Collector Current-mA
3