NEC 2SC3357 Schematic

DATA SHEET

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DESCRIPTION

The 2SC3357 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristic.

FEATURES

•Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz

•Large PT in Small Package

T

P

: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current I Total Power Dissipation PT* 1.2 W Thermal Resistance R Junction Temperature T Storage Temperature T

* mounted on 16 cm

CBO CEO EBO

C

th(j-a)

* 62.5 °C/W

j stg

20 V 12 V

3.0 V

100 mA

150 °C

65 to +150 °C

−

2

× 0.7 mm Ceramic Substrate

SILICON TRANSISTOR

2SC3357

PACKAGE DIMENSIONS

EB

0.42 ±0.06

0.8 MIN.

(Unit: mm)

4.5±0.1

1.6±0.2

C

0.42±0.06

1.5

0.47 ±0.06

3.0

Term, Connection

E

: Emitter

C

: Collector (Fin)

B

: Base

(SOT-89)

2.5±0.1

1.5±0.1

4.0±0.25

0.41

−0.03 +0.05

Document No. P10357EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan

1985©

2SC3357

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

µ

Collector Cutoff Current I Emitter Cutoff Current I

CBO

EBO

1.0

1.0 DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA Gain Bandwidth Product f

T

6.5 GHz VCE = 10 V, IC = 20 mA

Feed-Back Capacitance Cre** 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz

2



21

S

Insertion Power Gain

e

9dBV Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz

* Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.

FE

Classification

h

Class RH RF RE

Marking RH RF RE

FE

h

50 to 100 80 to 160 125 to 250

A

CB

= 10 V, IE = 0

V

µ

A

EB

= 1.0 V, IC = 0

V

CE

= 10 V, IC = 20 mA, f = 1.0 GHz

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

2.0

Ceramic Substrate

2

16 cm

× 0.7 mm

1.0

-Total Power Dissipation-W

T

P

Free Air

0 50 100 150

th(j-a)

312.5 ˚C/W

R

T

A

-Ambient Temperature-°C

FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE

2

f = 1.0 MHz

1

0.5

-Feed-back Capacitance-pF

re

C

0.3 0 0.5 1 2 5 10 20 30

V

CB

-Collector to Base Voltage-V

2

2SC3357

200

100

50

hFE-DC Current Gain

20

10

1 5 10 500.5

GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT

10

5.0

3.0

2.0

DC CURRENT GAIN vs. COLLECTOR CURRENT

C-Collector Current-mA

I

VCE = 10 V

INSERTION GAIN vs. COLLECTOR CURRENT

15

10

-Insertion Gain-dB

2

5

|S21e|

0

0.5 1 5 10 50 70 I

C-Collector Current-mA

INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY

Gmax

20

2

|S21e|

VCE = 10 V f = 1.0 GHz

1.0

0.5

0.3

0.2

fT-Gain Bandwidth Product-MHz

VCE = 10 V

0.1 0 0.5 10 105.0 30

C-Collector Current-mA

I

NOISE FIGURE vs.

7

6

COLLECTOR CURRENT

VCE = 10 V f = 1.0 GHz

5

4

3

2

NF-Noise Figure-dB

0

0.5 1 5 10 50 70

C-Collector Current-mA

I

10

-Insertion Gain-dB

2

21e|

Gmax-Maximum Gain-dB

|S

VCE = 10 V

C = 20 mA

I

0

INTERMODULATION DISTORTION vs. COLLECTOR CURRENT

−80

−70

−60

IM2, IM3 (dB)

−50

−40

−30

20 30

0.1 0.2 0.4 0.6 0.81.0 f-Frequency-GHz

IM3

IM2

VCE = 10 V

0 = 100 dB V/50 Ω

V

at

R

g = Re = 50 Ω

IM2

f = 90 + 100 MHz f = 2 × 200 − 190 MHz

IM3

µ

40 6050 70

I

C-Collector Current-mA

3

NEC 2SC3357 Schematic [ru]