NEC 2sc3355 Datasets

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC3355

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

DESCRIPTION

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.

FEATURES

• Low noise and high gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz

• High power gain : MAG = 11 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

ORDERING INFORMATION

Part Number Quantity Supplying Form
2SC3355 500 pcs (Non reel) • 18 mm wide radial taping
2SC3355-T 2.5 kpcs/box (Box t ype) • Supplying paper tape with in a box

Remark

To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 500 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T

CBO

CEO

EBO

C

tot

stg

20 V
12 V

3.0 V
100 mA
600 mW

j

150

−

65 to +150

°

C

°

C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10208EJ01V0DS (1st edition)
(Previous No. P10355EJ3V1DS00)
Date Published April 2003 CP(K)
Printed in Japan

The mark

••••

shows major revised points.

NEC Compound Semiconductor Devices 1985, 2003



2SC3355

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB
Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB
Output Capacitance

CBO

VCB = 10 V, IE = 0 mA – – 1.0

EBO

VEB = 1.0 V, IC = 0 mA – – 1.0

Note 1

FE

h



C

VCE = 10 V, IC = 20 mA 50 120 300 –

T

VCE = 10 V, IC = 20 mA – 6.5 – GHz

2



21e

S

VCE = 10 V, IC = 20 mA, f = 1 GHz – 9.5 – dB

Note 2

ob

VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.65 1.0 pF

µ

A

µ

A

Notes 1.

Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded

2.

hFE CLASSIFICATION

Rank K

Marking K

hFE Value 50 to 300

s, Duty Cycle ≤ 2%

µ

2

Data Sheet PU10208EJ01V0DS

TYPICAL CHARACTERISTICS (TA = +25°°°°C, unless otherwise specified)

2SC3355

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

1 250

1 000

(mW)

tot

With heat sink

750

500

Free air

250

Total Power Dissipation P

0

25 50 75 100 125 150

Ambient Temperature TA (˚C)

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

100

FE

50

Heat sink

(Aluminum)

19 mm

3.8 mm

CE

= 10 V

V

10 mm7.8 mm

REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE

2

(pF)

re

1

0.5

Reverse Transfer Capacitance C

0.3

0.50.2 1 2 5 10 3020

Collector to Base Voltage VCB (V)

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT

10

VCE = 10 V

5

(GHz)

T

2

1

f = 1 MHz

DC Current Gain h

20

10

15100.5 50
Collector Current IC (mA)

INSERTION POWER GAIN, MAG
vs. FREQUENCY

25

MAG

20

(dB)

2

|

15

21e

10

5

V

CE

= 10 V

I

C

= 20 mA

0

Maximum Available Power Gain MAG (dB)

Insertion Power Gain |S

0.05 0.1 0.5 10.2 2
Frequency f (GHz)

2

|S

21e

|

0.5

0.2

Gain Bandwidth Product f

0.1
1 5 10 500.1 0.5 100

Collector Current IC (mA)

INSERTION POWER GAIN
vs. COLLECTOR CURRENT

15

(dB)

2

|

21e

10

5

Insertion Power Gain |S

0

0.5 1 10 50570
Collector Current IC (mA)

VCE = 10 V
f = 1 GHz

Data Sheet PU10208EJ01V0DS

3

2SC3355

NOISE FIGURE vs.
COLLECTOR CURRENT

7

6

5

4

VCE = 10 V
f = 1 GHz

(dB)

3

IM3, IM2 vs. COLLECTOR CURRENT

–100

(dB)

2

–90

–80

–70

VCE = 10 V
Vo= 100 dB V/50 Ω
Rg = Re = 50 Ω
IM2 : f = 90 + 100 MHz
IM3 : f = 2 × 200 – 190 MHz

µ

IM

3

3

2

Noise Figure NF (dB)

1
0

0.5 1 5 10 50 70

Remark

Collector Current I

The graphs indicate nominal characteristics.

C

(mA)

–60

–50

–40
–30

2nd Order Intermodulation Distortion IM

3rd Order Intermodulation Distortion IM

20 30 40 50 60 70

Collector Current I

C

(mA)

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/

IM

2

4

Data Sheet PU10208EJ01V0DS

SMITH CHART

S

11e

, S

22e

-FREQUENCY

CONDITION : VCE = 10 V

2SC3355

0.13

0.12

0.11

0.39

100

0.9

0.8

0.7

2.0 GHz

0.5

0.6

0.7

0.8

REACTANCE COMPONENT

R

––––

(

)

Z

O

2.0 GHz

0.7

0.8

110

0.9

−

100

−

0.10

0.11

0.40

0.39

0.38

0.10

0.40

0.09

0.41

O

P

(

−

0.42

E

N

Z

IVE

T

A

0.5

120

0.5

T

N

0.3

G

NE

0.08

0.42

110

0.6

IC = 20 mA

0.4

0.6

120

−

0.09

0.41

0.08

0.07

0.43

130

0.06

0.44

0.05

140

0.4

M

0.45

R

O

T

A

R

0.04

E

0.46

N

E

G

D

R

0.03

A

S

0.47

E

W

E

O

T

R

G

S

E

H

D

T

0.02

G

0.48

N

I

N

T

E

L

N

E

E

I

V

C

A

F

0.01

W

0.49

F

E

O

C

0

N

0

0

O

I

T

C

E

L

F

D

E

A

R

O

0.01

0.1

L

0.49

F

O

D

R

E

A

L

G

W

N

O

0.02

A

T

0.48

S

H

T

160

G

−

N

E

0.03

L

0.47

E

V

0.46

A

0.04

CO

E

C

N

A

T

)

C

0.3

150

A

O

E

+JX

R

––––

(

E

V

Z

I

T

I

OS

P

0.2

0.1

0.1

0.2

T

0.2

N

E

N

O

P

)

OM

O

C

E

W

0.3

C

150

−JX

––––

N

−

A

T

C

A

E

R

0.4

0.05

140

−

0.45

0.06

130

0.44

0.07

0.43

90

1.0

0.2

S

0.9

1.0

0.2

1.0

90

0.12

0.38

0.14

0.37

0.36

80

1.2

0.4

0.6

0.8

1.0

11e

0.8

0.6

0.4

IC = 40 mA

0.2

1.4

1.2

0.2 GHz

0.4

0.6

0.8

1.0

0.8

0.6

0.4

0.2

1.2

−

80

−

0.13

0.37

0.15

0.35

70

1.4

1.0

1.6

1.8

2.0

IC = 40 mA

IC = 20 mA

1.0

S

22e

1.4

−

70

0.15

0.14

0.35

0.36

0.16

0.34

00

60

1.6

1.8

3.0

0.2 GHz

1.8

−

60

1.6

0.16

0.34

0.33

0.17

0.18

0.32

0.19

50

0.31

2.0

4.0

2.0

0.17

0.33

0.20

40

0.30

0.21

3.0

0.29

30

0.22

4.0

0.28

20

6.0

0.23

0.27

10

10

0.24

0.26

20

50

0.25

10

5.0

4.0

3.0

−40

0.19

0.31

−50

0.18

0.32

0.25

20

0

50

0.24

20

0.26

−10

10

0.23

0.27

−20

0.22

5.0

0.28

−30

0.21

0.29

0.20

0.30

S

21e

-FREQUENCY

CONDITION : VCE = 10 V, IC = 40 mA

90˚

120˚

0.2 GHz

150˚

180˚

2.0 GHz

–150˚

–120˚

–90˚

60˚

S

21e

4 8 12 16 20

–60˚

S

12e

-FREQUENCY

CONDITION : VCE = 10 V, IC = 40 mA

120˚

30˚

–30˚

150˚

180˚

0˚

–150˚

–120˚

0.2 GHz

90˚

S

12e

2.0 GHz

0.1 0.2 0.3 0.4 0.5

–90˚

60˚

30˚

0˚

–30˚

–60˚

Data Sheet PU10208EJ01V0DS

5

PACKAGE DIMENSIONS
TO-92 (UNIT: mm)

2SC3355

5.2 MAX.

5.5 MAX.

0.5

12.7 MIN.

1.27

2.54

1

3

2

1.77 MAX.

PIN CONNECTIONS

1. Base EIAJ : SC-43B

2. Emitter JEDEC: TO-92

3. Collector IEC : PA33

4.2 MAX.

6

Data Sheet PU10208EJ01V0DS

2SC3355

•

The information in this document is current as of April, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

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•

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•

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M8E 00. 4 - 0110

Data Sheet PU10208EJ01V0DS

7

2SC3355

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: [phone] FAX: [phone] E-mail: [email protected]

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