Page 1
DATA SHEET
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
•NF 1.5 dB TYP. @ f = 1.0 GHz
•MAG 14 dB TYP. @ f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CBO
CEO
EBO
C
T
j
stg
−65 to +150 °C
25 V
12 V
3.0 V
70 mA
250 mW
150 °C
SILICON TRANSISTOR
2SC2351
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
+0.1
0.65
−0.05
0.4
+0.1
−0.15
2.9±0.21.1 to 1.4
+0.1
0.950.3 0.95
−0.05
0.4
1.5
2
1
3
Marking
+0.1
−0.06
0.16
PIN CONNECTIONS
Emitter
1.
2.
3.
Base
Collector
0 to 0.1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
µ
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance C
Insertion Power Gain
CBO
EBO
FE
T
ob
21
e
S
40 200 VCE = 10 V, IC = 20 mA
4.5 GHz VCE = 10 V, IC = 20 mA
0.75 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
2
911 dBVCE = 10 V, IC = 20 mA, f = 1.0 GHz
0.1
0.1
Noise Figure NF 1.5 3.0 dB VCE = 10 V, IC = 5 mA, f = 1.0 GHz
Maximum Available Gain MAG 14 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class E/P * F/Q *
Marking R2 R3
FE
h
40 to 120 100 to 200 * Old Specification / New Specification
A
CB
= 15 V, IE = 0
V
µ
A
EB
= 2.0 V, IC = 0
V
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1984©
Page 2
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SC2351
200
100
50
30
-DC Current Gain
FE
h
20
10
12 51020 50700.5
GAIN BANDWIDTH PRODUCT vs.
7
5
COLLECTOR CURRENT
VCE = 10 V
2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
I
C
-Collector Current-mA
COLLECTOR CURRENT vs.
70
BASE TO EMITTER VOLTAGE
50
20
10
5
-Collector Current-mA
2
C
I
1
0.5
0.6 0.7 0.8 0.90.5
V
BE
INSERTION GAIN vs.
15
COLLECTOR CURRENT
10
VCE = 10 V
-Base to Emitter Voltage-V
VCE = 10 V
f = 1.0 GHz
1
0.5
-Gain Bandwidth Product-GHz
T
0.2
f
0.1
12 51020 50700.5
I
C
-Collector Current-mA
OUTPUT CAPACITANCE vs.
2
COLLECTOR TO BASE VOLTAGE
1
-Output Capacitance pF
0.5
ob
C
f = 1.0 MHz
-Insertion Gain-dB
2
|
5
21e
|S
0
12 51020 50700.5
7
6
5
4
3
NF-Noise Figure-dB
2
1
I
C
-Collector Current-mA
NOISE FIGURE.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5 1 2 5 10 20 300
V
CB
-Collector to Base Voltage-V
0
12 51020 50700.5
I
C
-Collector Current-mA
2
Page 3
NF, Ga vs. COLLECTOR CURRENT
6
5
4
3
2
NF-Noise Figure-dB
1
NF
Ga
V
CE
= 10 V
f = 1 GHz
2SC2351
10
5
-Associated Gain-dB
a
G
00
1 3 5 7 10 30
C
-Collector Current-mA
I
3
Page 4
2SC2351
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a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
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If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.
M4 96. 5
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