NEC 2sc1623 Datasets

DATA SHEET

SILICON TRANSISTOR

2SC1623

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

• High DC Current Gain: h

CE = 6.0 V, IC = 1.0 mA)

(V

• High Voltage: V

CEO = 50 V

FE = 200 TYP.

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Current (TA = 25 ˚C)

Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I

CEO 50 V
EBO 5.0 V

C 100 mA

Maximum Power Dissipation

Total Power Dissipation

at 25 ˚C Ambient Temperature P

T 200 mW

Maximum Temperatures

Junction Temperature Tj 150 ˚C
Storage Temperature Range T

stg –55 to +150 ˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PACKAGE DIMENSIONS

in millimeters

2.8 ± 0.2

1.5

2

1

Marking

0 to 0.1

2.9 ± 0.2

0.95 0.95

0.3

1.1 to 1.4

1: Emitter
2: Base
3: Collector

+0.1

–0.05

0.4

+0.1

0.65

–0.15

3

–0.05

+0.1

0.4

–0.06

+0.1

0.16

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1
Emitter Cutoff Current IEBO 0.1
DC Current Gain hFE 90 200 600 VCE = 6.0 V, IC = 1.0 mA*
Collector Saturation Voltage V CE(sat) 0.15 0.3 V IC = 100 mA, IB = 10 mA*
Base to Saturation Voltage VBE(sat) 0.86 1.0 V IC = 100 mA, IB = 10 mA*
Base Emitter Voltage VBE 0.55 0.62 0.65 V VCE = 6.0 V, IC = 1.0 mA*
Gain Bandwidth Product fT 250 MHz VCE = 6.0 V, IE = –10 mA
Output Capacitance Cob 3.0 pF VCB = 6.0 V, IE = 0, f = 1.0 MHz

* Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %

hFE Classification

Marking L4 L5 L6 L7

hFE 90 to 180 135 to 270 200 to 400 300 to 600

Document No. TC-1481C

(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan

µ

A VCB = 60 V, IE = 0

µ

A VEB = 5.0 V, IC = 0

©

1984

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SC1623

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

200
180
160
140
120
100

80
60
40
20

PT - Total Power Dissipation - mW

0

–20 0 20 40 60 80 100 120 140 160 180

T

A - Ambient Temperature - ˚C

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

100

1.0

0.9

0.8

80

0.7

0.6

0.5

60

0.4

0.3

40

20

IC - Collector Current - mA

0

0 0.4 0.8 1.2 1.6 2.0

0.2

IB = 0.1 mA

0

VCE - Collector to Emitter Voltage - V

Free air

NORMALIZED COLLECTOR CUTOFF
CURRENT vs. AMBIENT TEMPERATURE

10000

5000
2000

1000

500
200

100

50
20

- Normalized Collector Cutottt Current

10

5
2

1

CBO (TA)

I

0 20 40 60 80 100 120 140 160

CBO (TA = 25 ˚C)

I

T

A - Ambient Temperature - ˚C

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

10

45

40

8

35

30

6

25
20

4

15

2

IC - Collector Current - mA

0

0 1020304050

10

= 5.0 A

B

I

0

µ

VCE - Collector to Emitter Voltage - V

1000

500
300

100

50
30

hFE - DC Current Gain

10

5
3

0.1

0.2 0.5 1.0 2.0 5.0 10 20 50 100

2

DC CURRENT GAIN vs.
COLLECTOR CURRENT

IC - Collector Current - mA

VCE = 6.0 V

1.0 V

0.5 V

1000

500
300

100

50
30

hFE - DC Current Gain

10

5
3

0.1

0.2 0.5 1.0 2.0 5.0 10 20 50 100

DC CURRENT GAIN vs.
COLLECTOR CURRENT

TA = 75 ˚C

25 ˚C

–25 ˚C

IC - Collector Current - mA

VCE = 6.0 V
Pulsed

2SC1623

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

100

VCE = 6.0 V
Pulsed

50
20
10

5
2
1

0.5

= 75 ˚C

A

T

25 ˚C

–25 ˚C

0.2

0.1

- Collector Current - mA

C

I

0.05

0.02

0.01

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

BE

- Base to Emitter Voltage - V

V

GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT

10000

5000
2000

1000

500
200

100

VCE =10 V

2 V

1 V

50

- Gain Bandwidth Product - MHz

T

20

f

10

–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100

IE - Emitter Current - mA

6 V

COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT

10

5
2

1

V

BE(sat)

0.5

0.2
V

0.1

0.05

- Base Saturation Voltage - V

- Collector Saturation Voltage - V

0.02

BE(sat)

CE(cat)

V

V

0.01

0.1 0.2 10.5 2 5 10 20 50 100

CE(sat)

I

C

- Collector Current - mA

IC = 50 · I

INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE

100

50
20

10

5

C

ib

(I

C

= 0)

C

ob

(I

2
1

- Output Capacitance - pF

0.5

- Input Capacitance - pF

ib

ob

C

C

0.2

0.1

0.1 0.2 0.5 1 2 5 10 20 50 100
VCB - Collector to Base Voltage - V

EB

- Emittor to Base Voltage - V

V

Pulsed

IC = 50 · I

10

B

20

B

20

10

f = 1.0 MHz

E

= 0)

SMALL SIGNAL CURRENT GAIN vs.
DC CURRENT GAIN

1000

800

V

CE

= 6.0 V

C

= 1.0 mA

I
f = 1.0 kHz

600

400

- Small Signal Current Gain

200

fe

h

0

0 200 400 600 800 1000

hFE - DC Current Gain

INPUT IMPEDANCE VOLTAGE FEEDBACK
RATIO AND OUTPUT ADMITTANCE vs.
SMALL SIGNAL CURRENT GAIN

50

50

100

–4

µ

80

60

40

- Output Admittance - S

oe

20

h

0

- Voltage Feedback Ratio - ×10

re

h

40

30

20

10

40

30

20

- Input Impedance - kΩ

ie

h

10

0

0

VCE = 6.0 V

C

= 1.0 mA

I
f = 1.0 kHz

h

oe

h

re

h

ie

200 400 600 800 1000

hfe - Small Signal Current Gain

3

2SC1623

NORMALIZED h-PARAMETER vs.
COLLECTOR CURRENT

10

hie

5

hre

2

1

hfe

0.5

hoe

0.2

He - Normalized h - Parameter

0.1

0.1 0.2 0.5 1 2 5 10
IC - Collector Current - mA

VCE = 6.0 V
f = 1.0 kHz

e =

H

he(IC = 1.0 mA)

h

e(IC)

hoe

hfe

hre

hie

NORMALIZED h-PARAMETER vs.
COLLECTOR TO EMITTER VOLTAGE

3

2

hoe

hre

1

hfe hie

He - Normalized h - Parameter

0

VCE - Collector to Emitter Voltage - V

10 20 30

ICE = 1.0 V
f = 1.0 kHz

he(VCE)

He =

he(VCE = 6 V)

hfe hie

hoe

hre

4

[MEMO]

2SC1623

5

2SC1623

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11