Page 1
DATA SHEET
PNP SILICON EPITA XIAL TRA NSI STOR
PNP SILICON EPITAXIAL TRANSISTOR
2SB1571
FEATURES
• Low VCE(sat)
: V
• Complementary to 2SD2402
CE(sat)1
≤ −0.35 V
ABSOL UTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse)
Base Current (DC) I
Base Current (pulse)
Total Power Dissipation
Note1
Note1
Note2
Junction Temperature T
Storage Temperature Range T
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 16 cm
CBO −50 V
CEO −30 V
EBO −6.0 V
C(DC) −5.0 A
I
C(pulse) −8.0 A
B(DC) −0.2 A
I
B(pulse) −0.4 A
P
T
j
stg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Base to Emitt er Voltage
Collector Saturation Vol t age
Collector Saturation Vol t age
Base Saturation Voltage
Note
Note
Note
Note
Note
Gain Bandwidth Product f
Output Capacitance C
Turn-on Time t
Storage Time t
Fall Time t
s, Duty Cycle ≤ 2%
Note Pulsed: PW ≤ 350
µ
CBO
EBO
FE1
h
FE2
h
BE
V
CE(sat)1IC
V
CE(sat)2IC
V
BE(sat)IC
V
T
ob
on
stg
f
VCB = −50 V, IE = 0 −100 nA
VEB = −6.0 V, IC = 0 −100 nA
VCE = −1.0 V, IC = −1.0 A 80 −
VCE = −1.0 V, IC = −2.0 A 100 200 400 −
VCE = −1.0 V, IC = −0.1 A −0.6 −0.665 −0.7 V
= −3.0 A, IB = −0.15 A −0.17 −0.35 V
= −5.0 A, IB = −0.25 A −0.28 −0.55 V
= −3.0 A, IB = −0.15 A −0.89 −1.2 V
VCE = −10 V, IE = 0.5 A 150 MHz
VCB = −10 V, IE = 0, f = 1.0 MHz 100 pF
IC = −2.0 A, VCC = −10 V, 265 ns
RL = 5.0 Ω, IB1 = −IB2 = −0.1 A, 350 ns
2.0 W
150 °C
–55 to + 150 °C
2
x 0.7 mm
PACKAGE DRAWING (Unit: mm)
4.5±0.1
0.42
±0.06
0.8 MIN.
E
1.6±0.2
C
1.5
3.0
0.47
±0.06
B
2.5±0.1
0.42
±0.06
1.5±0.1
4.0±0.25
0.41
E: Emitter
C: Collector (Fin)
B: Base
50 ns
+0.03
–0.05
hFE CLASSFICATION
Marking HX HY HZ
FE2
h
Document No. D15930EJ2V0DS00 (2nd edition)
Date Published December 2001 NS CP(K)
Printed in Japan
100 to 200 160 to 320 200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
2001
Page 2
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - ˚C
0
1209030 150
60
100
80
40
60
20
dT - Percentage of Rated Power - %
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
−0.2 −0.4 −0.6 −0.8 −1.0
−5
−4
−3
−2
−1
I
B
= −10 mA
−20 mA
−30 mA
−50 mA
−40 mA
VCE - Collector to Emitter Voltage - V
I
C
- Collector Current - A
DC CURRENT GAIN vs. COLLECTOR CURRENT
−0.1−0.02 −0.05−0.01 −0.2 −0.5 −10−1 −2 −5
1000
100
200
500
10
20
50
I
C
- Collector Current - A
h
FE
- DC Current Gain
VCE = 1 V
T
A
= 125
˚C
75
˚C
25
˚C
0˚C
−25
˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
−400−200 −600 −800 −1000
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.005
−0.002
−0.001
VBE - Base to Emitter Voltage - mV
I
C
- Collector Current - A
V
CE
= 1 V
T
A
= 125˚C
25˚C
0˚C
75˚C
–25˚C
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
−1000
−500
−200
−100
−50
−20
−10
−1
−2
−5
IC = 20 I
B
.
IC - Collector Current - A
V
CE(sat)
- Collector Saturation Voltage - mV
−0.1−0.02 −0.05−0.01 −0.2 −0.5 −10−1 −2 −5
T
A
= 125
˚C
75
˚C
25
˚C
0˚C
−25
˚C
FORWARD BIAS SAFE OPERATING AREA
−5−2−1 −10 −100−20 −50
−10
−2
−5
−1
−0.05
−0.02
−0.01
−0.5
−0.2
−0.1
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - A
TA = 25˚C
Single Pulse
PW = 1 ms
10 ms
100 ms
DC
2SB1571
2
Data Sheet D15930EJ2V0DS
Page 3
2SB1571
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
1000
200
500
100
50
20
10
I
E
- Emitter Current - A
f
T
- Gain Bandwidth Product - MHz
VCE = −10 V
−0.1−0.02 −0.05−0.01 −0.2 −0.5 −10−1 −2 −5
SWITCHING CHARACTERISTICS
ton - Turn-On Time - µs
t
stg - Storage Time - µstf - Fall Time - µs
IC - Collector Current - A
1
2
0.05
0.1
0.2
0.5
−1−0.2 −0.5−0.1 −2 −5 −10
V
CC = −10 V
I
C = 20 IB
.
IB1 = −I
B2
ton
tstg
tf
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
−1000
−500
−200
−100
−50
−20
−10
−1
−2
−5
IC = 50 I
B
.
IC - Collector Current - A
V
CE(sat)
- Collector Saturation Voltage - mV
−0.1−0.02 −0.05−0.01 −0.2 −0.5 −10−1 −2 −5
T
A
= 125
˚C
75
˚C
25
˚C
0˚C
−25
˚C
−10
−1
−0.5
−0.2
−0.1
−5
IC = 20 I
B
.
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
I
C
- Collector Current - A
V
BE(sat)
- Base Saturation Voltage - V
−0.1−0.02 −0.05−0.01 −0.2 −0.5 −10−1 −2 −5
OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
1000
200
500
100
50
20
10
V
CB
- Collector to Base Voltage - V
C
ob
- Outpur Capacitance - pF
f = 1.0 MHz
−1−0.2 −0.5−0.1 −2 −5 −100−10 −20 −50
Data Sheet D15930EJ2V0DS
3
Page 4
2SB1571
•
The information in this document is current as of December, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
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•
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M8E 00. 4
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