Page 1
DATA SHEET
SILICON POWER TRANSISTOR
2SB1430
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1430 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded
insulation type package, thus contributing to high-density mounting
and mounting cost reduction.
FEATURES
• High hFE due to Darlington connection:
h
≥ 2,000 (VCE = 2 V, IC = 2 A)
FE
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
(TC = 25°C)
P
Total power dissipation
Total power dissipation
Junction temperature T
Storage temperature T
T
(TA = 25°C)
P
T
*PW ≤ 10 ms, duty cycle ≤ 50%
CBO
CEO
EBO
C(DC)
C(pulse)
B(DC)
stg
*
j
−100
−100
−7.0
−5.0
−10
−0.5
20 W
2.0 W
150
−55 to +150 °C
°C
V
V
V
A
A
A
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13660EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998©
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Gain bandwidth product f
Collector capacitance C
Turn-on time t
Storage time t
Fall time t
CE(sat)
BE(sat)
CBO
FE1
FE2
stg
VCB = −100 V, IE = 0 −1.0
= −2.0 V, IC = −2.0 A
V
CE
*
= −2.0 V, IC = −4.0 A
V
CE
*
= −2.0 A, IB = −2.0 mA −1.5
I
C
*
= −2.0 A, IB = −2.0 mA −2.0
I
C
*
VCE = −5.0 V, IC = −0.5 A
T
VCB = −10 V, IE = 0, f = 1.0 MHz
ob
IC = −2.0 A, IB1 = −IB2 = −2.0 mA,
on
R
= 25 Ω, VCC ≅ 50 V
L
Refer to the test circuit.
f
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
2,000 20,000
500
80 MHz
60 pF
0.5
1.0
1.0
2SB1430
A
µ
V
V
s
µ
s
µ
s
µ
h
FE1
2,000 to 5,000 4,000 to 10,000 8,000 to 20,000
SWITCHING TIME (ton, t
, tf) TEST CIRCUIT
stg
Base current
waveform
Collector current
waveform
2
Data Sheet D13660EJ1V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°°°°C)
(W)
T
Total Power Dissipation P
2SB1430
Derating dT (%)
C
I
Case Temperature TC (°C)
Single pulse
(A)
C
Case Temperature TC (°C)
Collector Current I
Collector to Emitter Voltage VCE (V)
Without heatsink
With infinite heatsink
Transient Thermal Resistance r(t) (°C/W)
Pulse Width PW (s)
Data Sheet D13660EJ1V0DS
3
Page 4
Pulse test
2SB1430
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
(V)
(V)
CE(sat)
BE(sat)
Pulse test
FE
DC Current Gain h
Collector Current IC (A)
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (A)
4
Data Sheet D13660EJ1V0DS
Page 5
[MEMO]
2SB1430
Data Sheet D13660EJ1V0DS
5
Page 6
2SB1430
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
Loading...