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DATA SHEET
SILICON POWER TRANSISTOR
2SB1097
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Large current capacity in small dimension: I
• Low collector saturation voltage: V
= −0.5 V MAX. (@ −5 A)
CE(sat)
C(DC)
= 7 A
• Ideal for use in lamp drivers or inductance drivers
• Complementary transistor: 2SD1588
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
P
Total power dissipation
Total power dissipation
T
P
T
Junction temperature T
Storage temperature T
*PW ≤ 300 µs, duty cycle ≤ 10%
CBO
CEO
EBO
C(DC)
*
C(pulse)
B(DC)
(Tc = 25°C)
(Ta = 25°C)
j
stg
−80
−60
−7.0
−7.0
−15
−3.5
30 W
2.0 W
150
°C
−55 to +150 °C
V
V
V
A
A
A
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
FE1
FE2
CE(sat)
BE(sat)
VCB = −60 V, IE = 0 −10
CBO
VEB = −5.0 V, IC = 0 −10
EBO
= −1.0 V, IC = −3 A
V
CE
**
= −1.0 V, IC = −5 A
V
CE
**
= −5 A, IB = −0.5 A −0.5
I
C
**
= −5 A, IB = −0.5 A −1.5
I
C
**
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed
hFE CLASSIFICATION
Marking M L K
h
FE1
Document No. D16127EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
40 to 80 60 to 120 100 to 200
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
40 200
20
A
µ
A
µ
V
V
2002
1998©
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TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
2SB1097
2 mm aluminum board, no
insulating board, grease
coating, natural air cooling
(W)
T
With infinite heatsink
(Tc = 25°C)
???
(A)
C
Collector Current I
Total Power Dissipation P
Without heatsink
Ambient Temperature Ta (°C)
C/W)
°
(
th(j-c)
Collector to Emitter Voltage VCE (V)
Derating dT (%)
C
I
Transient Thermal Resistance R
Case Temperature TC (°C)
Pulse Width PW (s)
(A)
C
FE
DC Current Gain h
Collector Current I
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
2
Data Sheet D16127EJ1V0DS
Page 3
(V)
CE(sat)
Collector Saturation Voltage V
2SB1097
(V)
BE(sat)
Base Saturation Voltage V
Collector Current IC (A)
Data Sheet D16127EJ1V0DS
3
Page 4
2SB1097
•
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M8E 00. 4
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