Page 1
DATA SHEET
SILICON TRANSISTOR
2SA675
PNP SILICON EPITAXIAL TRANSISTOR
FOR DRIVING FLUORESCENT INDICATOR PANNEL
The 2SA675 is a resin sealed mold transistor and is ideal for
dynamic drivers of counting indicator pannel such as fluorescent
indicator pannel due to high voltage.
• High voltage
V
> −80 V, V
CBO
> −80 V
CER
• Excellent linearity for current of DC current gain
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
CER
EBO
*
C
T
j
stg
−80
−80
−5.0
−100
250 mW
125
−55 to +125 °C
mA
°C
V
V
V
*RBE = 30 kΩ
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
PACKAGE DRAWING (UNIT: mm)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Gain bandwidth product f
Output capacitance C
Storage time t
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16146EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
CBO
EBO
FE1
FE2
CE(sat)IC
BE(sat)IC
T
ob
stg
VCB = –60 V, IE = 0
VEB = –3.0 V, IC = 0
VCE = –3.0 V, IC = –1.0 mA 60 120
VCE = –3.0 V, IC = –20 mA 50 120 300
= –20 mA, IB = –1.0 mA
= –20 mA, IB = –1.0 mA
VCE = –6.0 V, IE = 10 mA 100 170 MHz
VCB = –10 V, IE = 0, f = 1.0 MHz 4.5 10 pF
Refer to the test circuit. 0.5 1.0
−0.10 −1.50
−0.74 −1.20
−1.0
−1.0
A
µ
A
µ
V
V
s
µ
2002
1998©
Page 2
hFE CLASSIFICATION
Marking L K U
h
FE2
50 to 125 80 to 200 120 to 300
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
2SA675
2
Data Sheet D16146EJ3V0DS
Page 3
SWITCHING TIME TEST CIRCUIT
2SA675
oscillo scope
Data Sheet D16146EJ3V0DS
3
Page 4
2SA675
•
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M8E 00. 4
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