Page 1
PRELIMINARY DATA SHEET
DATA SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES PACKAGE DIMENSION (in millimeters)
_
•
High f
T
fT = 8.5 GHz TYP.
•
High gain
| S
| 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
21e
•
High-speed switching characterstics
•
Equivalent NPN transistor is the 2SC3583.
ABSOL UTE MAXIMUM RATINGS (TA = 25
Parameter Symbol Rating Unit
+0.1
–0.05
0.4
0.950.95
0.2
_
+
°°°°
C)
2.9
2.8+0.2
1.5 0.65
2
1
+0.1
–0.15
3
+0.1
–0.05
0.4
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CB0
CE0
EB0
C
T
j
stg
ELECTRICAL CHARACTERISTICS (TA = 25
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Collector Capacitance Cre*V
Insertion Power Gain | S
Noise Figure NF VCE = −8 V, IC = −3 mA, f = 1 GHz 1.5 3 dB
CB0
EB0
FE
T
| 2VCE = −8 V, IC = −20 mA, f = 1.0 GHz 8.0 12.0 dB
21e
−
20 V
−
12 V
−
3.0 V
−
50 mA
200 mW
150
−
65 to +150
°°°°
C)
VCB = −10 V
VEB = −1 V
VCE = −8 V, IC = −20 mA 20 100
VCE = −8 V, IC = −20 mA, f = 1 GHz 6.0 8.5 GHz
= −10 V, IE = 0, f = 1 MHz 0.5 1 pF
CB
°
C
°
C
0.3
1.1 to 1.4
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking; T92
Marking
0 to 0.1
−
0.1
−
0.1
+0.1
0.16
–0.06
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
µ
A
µ
A
hFE Classification
Rank FB
Marking T92
h
FE
Document No. P10925EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
20 to 100
1996©
Page 2
SWITCHING CHARACTERISTICS
2SA1977
Parameter
Symbol
Vin = 1 V
TYP.
Turn-on Delay Time ton (delay) 1.08 ns
Rise Time t
Turn off Delay Time t
Fall Time t
r
(delay) 0.32 ns
off
f
0.66 ns
0.78 ns
SWITCHING TIME MEASUREMENT CIRCUIT
VCC ( – )
C1
R
R
V
OUT
L1
Sampling
V
in
R
S
Oscilloscope
R
R
E
VEE ( + )
C2
50 Ω
Unit
R
L2
VSS ( – )
V
in
t
V
OUT
on (delay)
20 ns
r
t
t
off (delay)
t
r
Vin = 1 V, VBB = −0.5 V, RC1 = R
R
S
R
C
R
L1
R
L2
C2
R
E
V
EE
V
CC
(Ω)(Ω)(Ω)(Ω)(Ω)(V)(V)
160 1 k 200 250 2. 7 k 27 26.3
2
Page 3
TYPICAL CHARACTERISTICS
- Total Power Dissipation - mV
T
P
2SA1977
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0 50 100 150 200
TA - Ambient Temperature - ˚C
3
Page 4
BASE TO EMITTER VOLTAGE vs.
–10
–1.0
–0.1
VBE (ON) - DC Base Voltage - V
–0.01
–0.1 –1.0 –10 –100 –1000
COLLECTOR CURRENT
I
C - Collector Current - mA
VCE = –1 V
2SA1977
COLLECTOR AND BASE SATURATION VOLTAGE vs.
–10
–1.0
–0.1
VCE(sat) - Collector Saturation Voltage - V
VBE(sat) - Base Saturation Voltage - V
–0.01
–0.1 –1.0 –10 –100 –1000
COLLECTOR CURRENT
VBE (S)
VCE (S)
IC - Collector Current - mA
I
C = 10 • IB
4
Page 5
2SA1977
INSERTION GAIN vs. FREQUENCY
15
VCE = –8 V
f = 1 GHz
10
5
- Insertion Power Gain - dB
2
|
21e
|S
0
–1 –10 –100
I
C
- Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
V
CE
= –8 V
8
6
4
- Gain Bandwidth Product - GHz
T
f
2
0
–1 –10 –100
C
- Collector Current - mA
I
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.5
f = 1 MHz
1
0.5
- Collector Feed-back Capacitance - pF
re
C
0
–1 –10 –100
VCB - Collector to Base Voltage - V
INSERTION GAIN vs. FREQUENCY
35
30
25
20
15
10
5
- Insertion Power Gain - dB
2
|
0
21e
|S
–5
–10
–15
0.1
0.2 0.3 0.4 0.5 1.0 2.0 3.0
f - Frequency - GHz
V
CE
= –8 V
C
= –20 mA
I
5
Page 6
100
50
40
30
20
10
- DC Current Gain
FE
h
1.0
–0.1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = –3 V
CE
= –2 V
V
CE
= –1 V
V
–1.0 –10 –100 –1000
C
- Collector Current - mA
I
2SA1977
100
50
40
30
20
10
- DC Current Gain
5
FE
h
4
3
2
1
–0.1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
CE
= –8 V
V
–1.0 –10 –100 –1000
C
- Collector Current - mA
I
6
Page 7
2SA1977
S
11
VCE = –8 V
I
C
= –20 mA
3.0 GH
Z
0.1 GH
Z
S
22
VCE = –8 V
C
= –20 mA
I
3.0 GH
Z
0.1 GH
Z
7
Page 8
S-PARAMETER
(VCE = 1 V, IC = 5 mA, Zo = 50 Ω)
2SA1977
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.553
200 0.460
300 0.427
400 0.393
500 0.377
600 0.367
700 0.362
800 0.363
900 0.364
−
43.7 11.03 150. 0.423 71.2 0.666
−
78.2 8.780 129. 0.691 59.4 0.696
−
104 7.003 115. 0.857 54.4 0.556
−
123 5.700 105. 0.983 52.7 0.461
−
138 4.74 97.6 0.109 52.2 0.392
−
149 4.053 91.2 0.120 52.5 0.341
−
159 3.549 85.9 0.131 52.9 0.307
−
168 3.151 61.3 0.143 53.1 0.280
−
175 2.847 77.0 0.154 53.8 0.258
1000 0.365 178 2.603 73.0 0.165 54.0 0.241
1100 0.369 172 2.391 69.3 0.176 54.4 0.227
1200 0.375 166 2.219 66.8 0.188 54.2 0.217
1300 0.376 162 2.070 62.7 0.200 54.4 0.207
1400 0.384 157 1.940 59.4 0.213 54.1 0.200
1500 0.391 153 1.838 56.3 0.225 53.8 0.192
1600 0.399 149 1.744 53.5 0.238 53.4 0.188
1700 0.405 146 1.659 50.8 0.250 52.9 0.184
1800 0.411 142 1.584 48.2 0.264 52.3 0.184
1900 0.418 139 1.520 45.6 0.277 51.7 0.182
2000 0.423 135 1.461 43.1 0.290 51.1 0.181
2100 0.429 132 1.408 40.9 0.302 50.2 0.180
2200 0.438 130 1.361 38.6 0.314 49.4 0.182
2300 0.444 127 1.316 36.4 0.328 48.5 0.181
2400 0.450 124 1.276 34.2 0.341 47.6 0.187
2500 0.457 122 1.239 32.3 0.353 46.5 0.188
−
−
−
−
−
−
−
−
−
−
25.0
−
42.2
−
52.9
−
59.5
−
64.2
−
67.4
−
70.5
−
73.7
−
76.1
−
78.8
−
82.0
−
84.8
−
88.4
−
92.0
−
94.9
−
99.1
102
107
111
115
119
125
128
132
137
8
Page 9
S-PARAMETER
(VCE = 3 V, IC = 5 mA, Zo = 50 Ω)
2SA1977
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.595
200 0.511
300 0.432
400 0.362
500 0.345
600 0.323
700 0.308
800 0.300
900 0.297
1000 0.295
1100 0.297
−
34.2 11.62 154. 0.0328 74.9 0.902
−
62.8 9.618 134. 0.0573 64.8 0.760
−
86.0 7.920 120. 0.0734 58.5 0.633
−
104 6.575 110. 0.0852 57.1 0.542
−
119 5.511 102. 0.0964 55.9 0.471
−
132 4.749 95.9
−
143 4.177 90.5
−
153 3.712 85.8
−
162 3.359 81.5
−
170 3.064 77.6
−
177 2.818 74.0
1200 0.300 176 2.617 70.6
1300 0.303 170 2.439 67.4
1400 0.308 164 2.284 64.2
1500 0.314 160 2.159 61.2
1600 0.322 155 2.046 58.4
1700 0.328 151 1.944 55.7
1800 0.335 147 1.855 53.0
1900 0.341 143 1.774 50.5
2000 0.349 140 1.705 48.1
2100 0.355 136 1.638 45.7
2200 0.364 133 1.583 43.5
2300 0.372 130 1.53 41.2
2400 0.378 128 1.479 39.0
2500 0.386 125 1.439 37.0
0.106
0.116
0.126
0.137
0.147
0.158
0.169
0.181
0.192
0.203
0.215
0.227
0.240
0.252
0.264
0.276
0.289
0.302
0.314
0.326
56.4 0.420
56.6 0.383
57.1 0.355
57.3 0.332
57.9 0.315
57.9 0.299
58.3 0.287
58.1 0.276
58.1 0.266
57.8 0.258
57.5 0.250
57.3 0.243
56.5 0.241
56.1 0.233
55.5 0.230
54.7 0.226
54.2 0.222
53.2 0.218
52.5 0.218
51.7 0.215
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
101.
19.4
33.2
41.9
47.3
50.3
52.2
54.1
55.7
57.2
58.9
60.6
62.1
64.6
66.5
68.5
71.4
73.6
76.9
80.3
83.1
86.5
90.7
93.6
97.5
9
Page 10
S-PARAMETER
(VCE = 8 V, IC = 5 mA, Zo = 50 Ω)
2SA1977
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.679
200 0.586
300 0.491
400 0.417
500 0.362
600 0.323
700 0.293
800 0.274
900 0.261
1000 0.251
1100 0.247
1200 0.245
1300 0.245
−
27.6 11.75 156. 0.0289 76.9 0.918
−
51.4 10.01 138. 0.0508 66.6 0.802
−
71.0 8.453 124. 0.0670 61.8 0.690
−
87.3 7.152 114. 0.0780 58.9 0.603
−
100 6.040 106. 0.0886 58.3 0.534
−
113 5.245 99.6 0.0984 57.9 0.485
−
124 4.627 94.2
−
135 4.124 89.4
−
145 3.734 85.0
−
154 3.419 81.2
−
162 3.150 77.6
−
170 2.919 74.2
−
177 2.720 71.0
1400 0.247 175 2.551 67.8
1500 0.251 169 2.410 64.8
1600 0.258 164 2.283 62.1
1700 0.263 159 2.169 59.3
1800 0.269 154 2.067 56.7
1900 0.276 150 1.977 54.4
2000 0.283 146 1.898 51.8
2100 0.290 142 1.824 49.5
2200 0.298 138 1.762 47.2
2300 0.307 135 1.701 44.9
2400 0.314 132 1.645 42.8
2500 0.321 129 1.597 40.6
0.107
0.117
0.126
0.135
0.145
0.155
0.166
0.176
0.187
0.198
0.209
0.221
0.232
0.243
0.256
0.267
0.279
0.291
0.304
58.0 0.448
58.4 0.419
58.6 0.396
59.4 0.377
59.6 0.361
59.6 0.350
59.8 0.339
59.9 0.327
59.7 0.320
59.5 0.311
59.4 0.305
58.9 0.299
58.6 0.292
58.1 0.287
57.5 0.283
57.0 0.277
56.1 0.272
55.4 0.270
54.7 0.264
−
15.9
−
27.7
−
35.3
−
39.9
−
42.5
−
44.0
−
45.5
−
46.6
−
47.7
−
48.8
−
50.2
−
51.4
−
53.2
−
54.6
−
56.1
−
58.2
−
59.8
−
62.4
−
64.9
−
67.0
−
69.6
−
72.9
−
75.1
−
78.7
−
81.3
10
Page 11
S-PARAMETER
(VCE = 8 V, IC = 20 mA, Zo = 50 Ω)
2SA1977
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.310
200 0.243
300 0.205
400 0.165
500 0.172
600 0.169
700 0.166
800 0.169
−
47.6 20.39 144. 0.0218 77.0 0.798
−
82.1 14.87 123. 0.0375 72.7 0.611
−
107 11.25 111. 0.0514 71.4 0.488
−
125 8.95 102. 0.0643 71.6 0.417
−
140 7.329 96.6 0.0777 71.5 0.365
−
153 6.232 91.6 0.0909 71.5 0.331
−
163 5.414 87.5 0.104 71.0 0.308
−
173 4.778 83.5 0.117 70.6 0.289
900 0.172 179 4.3 80.2 0.130 70.0 0.274
1000 0.176 172 3.902 77.1 0.143 69.3 0.262
1100 0.182 166 3.576 74.1 0.156 68.6 0.251
1200 0.188 160 3.310 71.2 0.169 67.7 0.244
1300 0.194 156 3.080 68.7 0.182 66.7 0.235
1400 0.202 151 2.875 66.0 0.195 66.0 0.227
1500 0.209 147 2.711 63.4 0.208 64.9 0.221
1600 0.217 144 2.564 61.0 0.221 63.9 0.213
1700 0.224 140 2.431 58.6 0.234 62.8 0.209
1800 0.233 137 2.315 56.4 0.247 61.7 0.204
1900 0.240 134 2.212 54.2 0.259 60.8 0.197
2000 0.247 132 2.123 52.0 0.272 59.8 0.193
2100 0.255 129 2.037 49.8 0.284 58.3 0.188
2200 0.263 126 1.965 47.7 0.296 57.2 0.183
2300 0.272 124 1.896 45.7 0.309 56.1 0.179
2400 0.278 122 1.833 43.7 0.321 54.8 0.177
2500 0.286 120 1.778 41.7 0.332 53.7 0.171
−
25.2
−
37.8
−
43.1
−
45.1
−
45.7
−
45.8
−
46.5
−
47.3
−
47.9
−
49.1
−
50.4
−
51.5
−
53.7
−
55.6
−
57.0
−
59.5
−
61.7
−
64.7
−
67.9
−
70.0
−
73.3
−
77.5
−
80.1
−
84.0
−
87.7
11
Page 12
2SA1977
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use of
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of a
device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard : Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they
should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
Loading...