NEC 2sa1897 Datasets

Page 1
SILICON TRANSISTOR
2SA1897
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SA1897 features a low saturation voltage and is available
for high current control in small dimension. This transistor is ideal
for high efficiency DC/DC converters due to fast switching speed.
FEATURES
• High current capacitance
• Low collector saturation voltage and high h
FE
• Insulation type package supportable for radial taping
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C(DC)
C(pulse)
B(DC)
T
T
j
stg
TC = 25°C −5.0
PW ≤ 10 ms, duty cycle ≤ 50 %
T
= 25°C
C
TC = 25°C
PACKAGE DRAWING (UNIT: mm)
−30
−20
−10
−8.0
−0.5
1.0 W
6.0 W
150
−55 to +150 °C
V
V
V
A
A
A
°C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16145EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan
2002
1998©
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ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Gain bandwidth product f
Output capacitance C
Turn-on time t
Storage time t
Fall time t
CBO
EBO
CE(sat)
BE(sat)
VCB = −20 V, IE = 0
VEB = −8.0 V, IC = 0
VCE = −2.0 V, IC = −0.5 A
FE1
VCE = −2.0 V, IC = −4.0 A
FE2
IC = −4.0 A, IB = −50 mA −230 −250
IC = −4.0 A, IB = −50 mA −0.9 −1.2
VCE = –5.0 V, IE = 1.5 A 180 MHz
T
VCB = –10 V, IE = 0, f = 1.0 MHz 220 pF
ob
IC = −5.0 A, VCC = −10 V
on
I
= −IB1 = −125 mA,
stg
B1
R
= 2.0 Ω,
f
L
hFE CLASSIFICATION
Marking L K
h
FE1
200 to 400 300 to 600
1.0
1.0
200 600 –
160 –
mV
400 ns
300 ns
60 ns
2SA1897
A
µ
A
µ
V
2
Data Sheet D16145EJ1V0DS
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TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
2SA1897
Data Sheet D16145EJ1V0DS
3
Page 4
2SA1897
4
Data Sheet D16145EJ1V0DS
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[MEMO]
2SA1897
Data Sheet D16145EJ1V0DS
5
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2SA1897
•
The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.
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M8E 00. 4
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