Page 1
DATA SHEET
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
2SA1847
The 2SA1847 is a power transistor developed for high-speed switching and features a high h
at low V
FE
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mount possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High hFE and low V
V
= −0.3 V MAX. @IC = −6.0 V, IB = −0.3 A
CE(sat)
CE(sat)
:
hFE ≥ 100 @VCE = −2.0 V, IC = −2.0 A
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(pulse)
CBO
CEO
EBO
C(DC)
B(DC)
stg
PW ≤ 300 µs, duty cycle ≤ 2% −20
Ta = 25°C
T
j
−150
−100
−7.0
−10
−6.0
1.8 W
150
−55 to +150 °C
CE(sat)
V
V
V
A
A
A
°C
.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15593EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998©
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
2
3
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
DC current gain h
Collector saturation voltage V
Collector saturation voltage V
Base saturation voltage V
Base saturation voltage V
CBO
CER
CEX1
CEX2
EBO
FE1
FE2
FE3
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
Gain bandwidth product f
Collector capacitance C
Turn-on time t
Storage time t
Fall time t
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
VCB = −100 V, IE = 0 −10
VCE = −100 V, REB = 50 Ω
Ta = 125°C
VCE = −100 V, V
VCE = −100 V, V
Ta = 125°C
VEB = −5.0 V, IC = 0 −10
= −2.0 V, IC = −0.5 A
V
CE
*
= −2.0 V, IC = −2.0 A
V
CE
*
= −2.0 V, IC = −6.0 A
V
CE
*
= −6.0 A, IB = −0.3 A −0.3
I
C
*
= −8.0 A, IB = −0.4 A −0.5
I
C
*
= −6.0 A, IB = −0.3 A −1.2
I
C
*
= −8.0 A, IB = −0.4 A −1.5
I
C
*
VCE = −10 V, IC = −0.5 A
T
VCB = −10 V, IE = 0, f = 1 MHz
ob
IC = −6.0 A
on
I
= −IB2 = −0.3 A
stg
B1
R
= 8.3 Ω, VCC = −50 V
f
L
= 1.5 V −10
BE(off)
= 1.5 V
BE(off)
100
100 400
60
150 MHz
250 pF
−1.0
−1.0
0.3
1.5
0.4
2SA1847
A
µ
mA
A
µ
mA
A
µ
−
−
−
V
V
V
V
s
µ
s
µ
s
µ
hFE CLASSIFICATION
Marking M L K
h
FE
100 to 200 150 to 300 200 to 400
PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION
Electrode Connection
1. Base
. Collector
. Emitter
2
Data Sheet D15593EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
(W)
T
Total Power Dissipation P
2SA1847
IC Derating dT (%)
Ambient Temperature Ta (°C)
C/W)
°
Ambient Temperature Ta (°C)
(t) (
(A)
C
th(j-a)
Collector Current I
Single pulse
Transient Thermal Resistance r
Collector to Emitter Voltage VCE (V)
(A)
C
FE
Pulse Width PW (s)
Pulse test
Collector Current I
Collector to Emitter Voltage VCE (V)
DC Current Gain h
Data Sheet D15593EJ2V0DS
Collector Current IC (A)
3
Page 4
2SA1847
µ
(V)
CE(sat )
Pulse test
BE(sat)
Pulse test
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (A)Collector Current IC (A)
(MHz)
T
(pF)
ob
Gain Bandwidth Product f
Collector Current IC (A)
s)
s)
µ
µ
s)
(
(
on
stg
(
f
Collector Capacitance C
Collector to Base Voltage VCB (V)
Fall Time t
Storage Time t
Turn-On Time t
Collector Current IC (A)
4
Data Sheet D15593EJ2V0DS
Page 5
2SA1847
SWITCHING TIME (ton, t
, tf) TEST CIRCUIT
stg
%DVHFXUUHQW
ZDYHIRUP
&ROOHFWRUFXUUHQW
ZDYHIRUP
Data Sheet D15593EJ2V0DS
5
Page 6
2SA1847
•
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M8E 00. 4
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