Page 1
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SA1840
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• On-chip C-to-E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation PT** 1.8 W
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C(DC)
C(pulse)
B(DC)
stg
*
j
*PW ≤ 300 µs, duty cycle ≤ 10%
** Ta = 25°C
−100
−100
−8.0
–
5.0
+
–
10
+
−0.5
150
−55 to +150 °C
V
V
V
A
A
A
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15589EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Turn-on time t
Storage time t
Fall time t
Collector capacitance C
CBO
EBO
FE1
FE2
CE(sat)
BE(sat)
VCB = −100 V, IE = 0 −1.0
VEB = −5 V, IC = 0 −5.0
= −2.0 V, IC = −2.0 A
V
CE
*
= −2.0 V, IC = −4.0 A
V
CE
*
= −2.0 A, IB = −2.0 mA −0.9 −1.5
I
C
*
= −2.0 A, IB = −2.0 mA −1.5 −2.0
I
C
*
IC = −2.0 A, IB1 = −IB2 = −2.0 mA
on
R
= 25 Ω, VCC ≅ −50 V
stg
f
ob
L
Refer to the test circuit.
VCB = 10 V, IE = 0, f = 1 MHz 45 pF
* Pulse test PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
2,000 20,000
500
0.7
1.7
0.7
2SA1840
A
µ
mA
−
−
V
V
s
µ
s
µ
s
µ
Marking M L K
h
FE1
2,000 to 5,000 4,000 to 10,000 8,000 to 20,000
PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
2
Data Sheet D15589EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
(W)
T
Total Power Dissipation P
2SA1840
IC Derating dT (%)
Ambient Temperature Ta (°C)
(A)
C
Collector Current I
Single pulse
Collector to Emitter Voltage VCE (V)
Single pulse
C/W)
°
(
th(j-a)
Transient Thermal Resistance r
Case Temperature Tc (°C)
Pulse Width PW (s)
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
Data Sheet D15589EJ2V0DS
FE
DC Current Gain h
Collector Current IC (A)
3
Page 4
2SA1840
(V)
CE(sat )
(V)
BE(sat)
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (A)Collector Current IC (A)
(pF)
ob
Collector Capacitance C
Collector to Base Voltage VCB (V)
4
Data Sheet D15589EJ2V0DS
Page 5
2SA1840
SWITCHING TIME (ton, t
, tf) TEST CIRCUIT
stg
Base current
waveform
Collector current
waveform
Data Sheet D15589EJ2V0DS
5
Page 6
2SA1840
•
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M8E 00. 4
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