NEC 2sa1836 Datasets

Page 1
DATA SHEET
PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
FEATURES
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = −50 V
• Can be automatically mounted
ORDERING INFORMATION
PART NUMBER PACKAGE
2SA1836 SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO
Collector to Emitter Voltage VCEO
Emitter to Base Voltage VEBO
Collector Current (DC) IC(DC)
Note1
Collector Current (pulse)
Total Power Dissipation
Note2
I
C(pulse)
T 200 mW
P
−60
−50
−5.0
−100
−200
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2
2. When mounted on ceramic substrate of 3.0 cm
x 0.64 mm
V
V
V
mA
mA
PACKAGE DRAWING (Unit: mm)
+0.1
0.3
–0
3
1.6 ± 0.1
0.8 ± 0.1
2
0.2
0.5
1.6 ± 0.1
+0.1 –0
1.0
0.5
1
0.75 ± 0.05
1: Emitter 2: Base 3: Collector
0.6
0.15
0 to 0.1
+0.1 –0.05
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D15615EJ2V0DS00 (2nd edition) Date Published October 2004 NS CP(K) Printed in Japan
The mark shows major revised points.
2001
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
V
Collector Cut-off Current ICBO
Emitter Cut-off Current IEBO
DC Current Gain
Note
h
FE1
hFE2
Base to Emitter Voltage
Collector Saturation Voltage
Base Saturation Voltage
Note
Note
Note
V
BE
V
CE(sat)
V
BE(sat)
Gain Bandwidth Product fT
Output Capacitance Cob
CB = −60 V, IE = 0
V
EB = −5.0 V, IC = 0
V
CE = −6.0 V, IC = −0.1 mA
V
CE = −6.0 V, IC = −1.0 mA
V
CE = −6.0 V, IC = −1.0 mA
I
C = −100 mA, IB = −10 mA
I
C = −100 mA, IB = −10 mA
V
CE = −6.0 V, IE = 10 mA
V
CE = −6.0 V, IE = 0 mA, f = 1.0 MHz
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSFICATION
Marking M4 M5 M6 M7
2SA1836
50
90 200 600
50 180 MHz
4.5 6.0 pF
−100
−100
−0.62
V
−0.18 −0.30
−0.86 −1.00
nA
nA
−
−
V
V
hFE2 90 to 180 135 to 270 200 to 400 300 to 600
2
Data Sheet D15615EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
0
2SA1836
TOTAL POWER DISSIPATION vs.
300
250
200
150
100
- Total Power Dissipation - mW
T
50
P
0
−100
−80
−60
−40
- Collector Current - mA
C
I
−20
0
COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT
−1
−0.5
−0.2
−0.1
−0.05
- Base Saturation Voltage - V
- Collector Saturation Voltage - V
−0.02
BE(sat)
V
CE(sat)
V
−0.01
AMBIENT TEMPERATURE
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
50
A
- Ambient Temperature - ˚C
T
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
−0.2 −0.4 −0.6 −0.8 −1.
VCE - Collector to Emitter Voltage - V
V
BE(sat)
V
CE(sat)
−5−2−1 −10 −100−20 −50
IC - Collector Current - mA
100 1257525 150
−0.6
−0.4
IB = −0.2 mA
Free air
2
−2.0
−1.8
−1.4
−1.2
−1.0
−0.8
IC = 10 I
−1.6
−100
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = −6.0 V
−30
−10
−3
−1
−0.3
−0.1
- Collector Current - mA
C
I
= 75˚C
A
T
25˚C
–25˚C
−0.03
−0.01
−0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1.0
BE
- Base to Emitter Voltage - V
V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
−8
−6
−4
- Collector Current - mA
−2
C
I
0
−
45
−
40
−
35
−
30
−
25
−
20
−
15
−
10
IB = −5.0 µA
−20−10 −30 −40
VCE - Collector to Emitter Voltage - V
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
10
5
2
1
0.5
- Output Capacitance - pF
ob
C
.
B
0.2
0.1
−5−2−1 −10 −100−20 −50
VCB - Collector to Base Voltage - V
f = 1.0 MHz
Data Sheet D15615EJ2V0DS
3
Page 4
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
500
200
100
50
- DC Current Gain
FE
h
20
10
I
C
- Collector Current - mA
GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT
1000
500
200
100
50
20
fT - Gain Bandwidth Product - MHz
10
E - Emitter Current - mA
I
VCE = −6 V
−1 V
−1−0.3−0.1 −3 −100−10 −30
VCE = −6 V
−1 V
521 10 10020 50
= 75
25
−25
VCE = −6.0 V
˚C ˚C ˚C
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
T
500
200
100
50
- DC Current Gain
FE
h
20
10
A
−1−0.3−0.1 −3 −100−10 −30
I
C
- Collector Current - mA
2SA1836
4
Data Sheet D15615EJ2V0DS
Page 5
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2SA1836
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M8E 02. 11-1
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