Page 1
DATA SHEET
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
2SA1743
The 2SA1743 is a power transistor developed for high-speed
switching and features a high hFE at low V
. This transistor is
CE(sat)
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low V
h
≥ 100 (VCE = −2 V, IC = −2 A)
FE
V
≤ 0.3 V (IC = −6 A, IB = −0.3 A)
CE(sat)
• Full-mold package that does not require an insulating board or
bushing
CE(sat)
:
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation
Total power dissipation
Junction temperature T
Storage temperature T
*PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
CBO
CEO
EBO
C(DC)
C(pulse)
B(DC)
(Tc = 25°C)
P
T
(Ta = 25°C)
P
T
stg
*
j
−55 to +150 °C
−100
−60
−7.0
−10
−20
−5.0
30 W
2.0 W
150
°C
V
V
V
A
A
A
©
2002
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage V
Collector to emitter voltage V
CEO(SUS)
CEX(SUS)
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
CEX1
CEX2
Emitter cutoff current I
DC current gain h
DC current gain h
DC current gain h
Collector saturation voltage V
Collector saturation voltage V
Base saturation voltage V
Base saturation voltage V
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
Collector capacitance C
Gain bandwidth product f
Turn-on time t
Storage time t
Fall time t
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
IC = −6.0 A, IB = −0.6 A, L = 1 mH −60
IC = −6.0 A, IB1 = −IB2 = −0.6 A,
V
= 1.5 V, L = 180 µH, clamped
BE(OFF)
VCB = −60 V, IE = 0 −10
CBO
VCE = −60 V, RBE = 50 Ω, Ta = 125°C −1.0
CER
VCE = −60 V, V
VCE = −60 V, V
BE(OFF)
BE(OFF)
Ta = 125°C
VEB = −5.0 V, IC = 0 −10
EBO
= −2.0 V, IC = −1.0 A
V
CE
*
FE1
= −2.0 V, IC = −2.0 A
V
CE
*
FE2
= −2.0 V, IC = −6.0 A
V
CE
*
FE3
= −6.0 A, IB = −0.3 A −0.3
I
C
*
= −8.0 A, IB = −0.4 A −0.5
I
C
*
= −6.0 A, IB = −0.3 A −1.2
I
C
*
= −8.0 A, IB = −0.4 A −1.5
I
C
*
VCB = −10 V, IE = 0, f = 1.0 MHz
ob
VCE = −10 V, IC = −1.0 A
T
IC = −6.0 A, RL = 8.3 Ω,
on
I
= −IB2 = −0.3 A, VCC ≅ −50 V
stg
B1
Refer to the test circuit.
f
−60
= 1.5 V −10
= 1.5 V,
−1.0
100
100 400
60
230 pF
80 MHz
0.3
1.5
0.3
2SA1743
V
V
A
µ
mA
A
µ
mA
A
µ
V
V
V
V
s
µ
s
µ
s
µ
hFE CLASSIFICATION
Marking M L K
h
FE2
SWITCHING TIME (ton, t
2
100 to 200 150 to 300 200 to 400
, tf) TEST CIRCUIT
stg
Data Sheet D16126EJ1V0DS
Base current
wavefor m
Collector current
wavefor m
Page 3
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
(W)
T
Total Power Dissipation P
Case Temperature TC (°C)
2SA1743
Derating dT (%)
C
I
Case Temperature TC (°C)
Single pulse
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
C/W)
°
(
th(j−c)
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
Without heatsink
Transient Thermal Resistance R
Pulse Width PW (s)
Data Sheet D16126EJ1V0DS
With infinite heatsink
3
Page 4
µ
Pulse test
2SA1743
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
(V)
(V)
CE(sat)
BE(sat)
Pulse test
FE
DC Current Gain h
Collector Current IC (A)
(MHz)
T
Base Saturation Voltage V
Collector Saturation Voltage V
(pF)
ob
Collector Current IC (A)
Gain Bandwidth Product f
Collector Current IC (A)
s)
s)
µ
s)
(
(
µ
on
stg
(
f
Fall Time t
StorageTime t
Turn-On Time t
Collector Capacitance C
Collector to Base Voltage VCB (V)
Collector Current IC (A)
4
Data Sheet D16126EJ1V0DS
Page 5
[MEMO]
2SA1743
Data Sheet D16126EJ1V0DS
5
Page 6
2SA1743
•
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and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4
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