Page 1
DATA SHEET
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
2SA1742
The 2SA1742 is a power transistor developed for high-speed
switching and features a high hFE at low V
. This transistor is ideal
CE(sat)
for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE and low V
h
≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A
FE
V
≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A
CE(sat)
• Full-mold package that does not require an insulating board or
bushing
CE(sat)
:
ABSOLUTE MAXIMUM RATINGS (TA = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(pulse)
CBO
CEO
EBO
C(DC)
B(DC)
T
j
stg
PW ≤ 300 µs,
duty cycle ≤ 10%
TC = 25°C
TA = 25°C
−100
−60
−7.0
−7.0
−14
−3.5
30 W
2.0 W
150
−55 to +150 °C
°C
V
V
V
A
A
A
ORDERING INFORMATION
Part No. Package
2SA1742 Isolated TO-220
(Isolated TO-220)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current I
DC current gain
Collector saturation voltage
Base saturation voltage
Collector capacitance C
Gain bandwidth product f
Turn-on time t
Storage time t
Fall time t
Note Pulse test PW ≤ 350
V
CEO(SUS)
CEX(SUS)
V
I
CBO
I
CER
I
CEX1
CEX2
I
EBO
h
h
h
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
µ
s, duty cycle ≤ 2%
IC = −4.0 V, IB = −0.4 A, L = 1 mH −60
IC = −4.0 A, IB1 = −IB2 = −0.4 A,
V
= 1.5 V, L = 180 µH, clamped
BE(OFF)
VCB = −60 V, IE = 0 A −10
VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0
VCE = −60 V, V
VCE = −60 V, V
T
= 125°C
A
BE(OFF)
BE(OFF)
VEB = −5.0 V, IC = 0 A −10
VCE = −2.0 V, IC = −0.7 A
FE1
VCE = −2.0 V, IC = −1.5 A
FE2
VCE = −2.0 V, IC = −4.0 A
FE3
IC = −4.0 A, IB = −0.2 A
IC = −6.0 A, IB = −0.3 A
IC = −4.0 A, IB = −0.2 A
IC = −6.0 A, IB = −0.3 A
VCB = −10 V, IE = 0 A, f = 1.0 MHz
ob
VCB = −10 V, IC = −1.0 A
T
IC = −4.0 A, RL = 12.5 Ω,
on
I
= −IB2 = −0.2 A, VCC ≅ −50 V
stg
B1
Refer to the test circuit.
f
−60
= 1.5 V −10
= 1.5 V,
Note
Note
Note
Note
Note
Note
Note
100
100 400
60
−1.0
−0.3
−0.5
−1.2
−1.5
180 pF
40 MHz
0.3
1.5
0.3
2SA1742
V
V
A
µ
mA
A
µ
mA
A
µ
V
V
V
V
s
µ
s
µ
s
µ
hFE CLASSIFICATION
Marking M L K
h
FE2
SWITCHING TIME (ton, t
100 to 200 150 to 300 200 to 400
, tf) TEST CIRCUIT
stg
Base current
waveform
Collector current
waveform
2
Data Sheet D14858EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°°°°C)
)
(W)
T
Total Power Dissipation P
2SA1742
Derating dT (%)
Case Temperature TC (°C)
(A)
C
(A)
C
(A)
C
Case Temperature TC (°C)
Collector current I
Collector Current I
Collector Current I
Collector to Emitter Voltage VCE (V)
Single pulse
Collector to Emitter Voltage VCE (V)
C/W)
°
(
th(t)
Without heatsink
With infinite heatsink
Transient Thermal Resistance r
Pulse Width PW (s
Data Sheet D14858EJ2V0DS
3
Page 4
(
µ
)
Pulse test
2SA1742
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
(V)
(V)
CE(sat)
BE(sat)
Pulse test
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (A)
FE
DC Current Gain h
Collector Current IC (A)
(MHz)
T
Gain Bandwidth Product f
Collector Current IC (A)
(pF)
ob
s
s)
µ
s)
(
µ
on
stg
(
f
Fall Time t
StorageTime t
Turn-On Time t
Collector Capacitance C
Collector to Base Voltage VCB (V)
Collector Current IC (A)
4
Data Sheet D14858EJ2V0DS
Page 5
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
2SA1742
Data Sheet D14858EJ2V0DS
5
Page 6
2SA1742
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
Loading...