NEC 2sa1648_2sa1648-z Datasets

Page 1

DATA SHEET

The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead processed product and is deal for mounting a

hybrid IC.

• Mold package that does not require an insulating board or

insulation bushing

• Low collector saturation voltage:

CE(sat)1 = −0.3 V MAX. (IC = −3.0 A)

• Fast switching speed:

f = 0.3

s MAX. (IC = −3.0 A)

• High DC current gain and excellent linearity

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter Symbol Ratings Unit

Collector to base voltage VCBO −100 V

Collector to emitter voltage VCEO −60 V

Emitter to base voltage VEBO −7.0 V

Collector current (DC) IC(DC) −5.0 A

Collector current (pulse) IC(pulse)

Base current (DC) IB(DC) −2.5 A

Total power dissipation (Tc = 25°C) PT 18 W

Total power dissipation (Ta = 25°C) PT 1.0

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

Notes 1. PW ≤ 300

2. Printing board mounted

3. 7.5 mm

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

Document No. D16121EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan

s, Duty Cycle ≤ 10%

× 0.7 mm ceramic board mounted

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

Note 1

−10 A

Note 2

Note 3

, 2.0

The mark shows major revised points.

SILICON POWER TRANSISTOR

2SA1648,1648-Z

PACKAGE DRAWINGS (Unit: mm)

6.5 ±0.2

5.0 ±0.2

1.6 ±0.2

213

1.1 ±0.2

2.32.3

TO-251(MP-3)

6.5±0.2

5.0±0.2

4.3 MAX.0.8

123

1.1±0.2

2.3 2.3

TO-252 (MP3Z)

ELECTRODE CONNECTION

1. Base

2. Collector

3. Emitter

4. Collector (Fin)

+0.2

1.5 −0.1

5.5 ±0.27.0 MIN.

0.5

0.75

0.1

+0.2

1.5-

5.5±0.2

10.0 MAX.

2.0

MIN.

0.9

MAX.

2.3 ±0.2

13.7 MIN.

+0.2

−0.1

2.3±0.2

0.8

MAX.

0.8

0.5 ±0.1

+0.2

−0.1

0.5

0.5±0.1

1.0 MIN.

1.8TYP.

0.7

2002

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2SA1648,1648-Z

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector to emitter voltage VCEO(SUS) IC = −3.0 A, IB = −0.3 A, L = 1 mH −60 V

Collector to emitter voltage VCEX(SUS) IC = −3.0 A, IB2 = −IB1 = −0.3 A,

BE(OFF) = 1.5 V, L = 180

H, clamped

Collector cutoff current ICBO VCE = −60 V, IE = 0 A −10

Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0 mA

Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10

Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V,

A = 125°C

Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 A −10

DC current gain hFE1

DC current gain hFE2

DC current gain hFE3

Collector saturation voltage VCE(sat)1

Collector saturation voltage VCE(sat)2

Base saturation voltage VBE(sat)1

Base saturation voltage VBE(sat)2

Note

VCE = −2.0 V, IC = −0.5 A 100

Note

VCE = −2.0 V, IC = −1.0 A 100 200 400

Note

VCE = −2.0 V, IC = −3.0 A 60

Note

IC = −3.0 A, IB = −0.15 A −0.3 V

Note

IC = −4.0 A, IB = −0.2 A −0.5 V

Note

IC = −3.0 A, IB = −0.15 A −1.2 V

Note

IC = −4.0 A, IB = −0.2 A −1.5 V

Collector capacitance Cob VCB = −10 V, IE = 0 A, f = 1.0 MHz 80 pF

Gain bandwidth product fT VCE = −10 V, IC = 0.5 A 90 MHz

Turn-on time ton 0.3

Storage time tstg 1.5

Fall time tf

C = −3.0 A, RL = 17 Ω,

I I

B1 = −IB2 = −0.15 A, VCC ≅ −50 V

Refer to SWITCHING TIME TEST CIRCUIT.

−60 V

−1.0 mA

0.3

Note Pulse test PW ≤ 350 µs, Duty Cycle ≤ 2%/Pulsed

hFE CLASSIFICATION

Marking M L K

hFE2 100 to 200 150 to 300 200 to 400

SWITCHING TIME TEST CIRCUIT

Base current wavefor m

Collector current wavefor m

Data Sheet D16121EJ3V0DS

Page 3

TYPICAL CHARACTERISTICS (TA = 25°C)

Total Power Dissipation PT (W)

2SA1648,1648-Z

Derating dT (%)

Case Temperature TC (°C)

TC = 25°C

Single pulse

C/W)

Case Temperature TC (°C)

TC = 25°C

Single pulse

th(j−A) = 125 °C/W

th(j−C) = 6.94 °C/W

Collector Current IC (A)Collector Current IC (A)

Collector to Emitter Voltage VCE (V)

Transient Thermal Resistance rth(j−c) (

Pulse Width PW (s)

Pulse test

Collector to Emitter Voltage VCE (V)

Data Sheet D16121EJ3V0DS

DC Current Gain h

Collector Current IC (A)

Page 4

2SA1648,1648-Z

Base Saturation Voltage VBE(sat) (V)

CE(sat) (V)

Collector Saturation Voltage V

Collector Current IC (A)

IE = 0 A

IC = 20 A • IB

Pulse test

TC = 25°C

Gain Bandwidth Product fT (MHz)

Collector Current IC (A)

Collector Capacitance Cob (pF)

Collector to Base Voltage VCB (V)

IC = 20 A • IB1 = −20 A • IB2

f (

Fall Time t

StorageTime tstg (

Collector Current IC (A)

Collector to Emitter Voltage VCE (V)

Data Sheet D16121EJ3V0DS

Page 5

2SA1648,1648-Z

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