NEC 2SA1221, 2SA1222 Technical data

DATA SHEET

SILICON TRANSISTORS

2SA1221, 1222

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES

PACKAGE DRAWING (UNIT: mm)

•Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies.

•Complementary transistor with 2SC2958 and 2SC2959

VCEO = 140 V: 2SA1221/2SC2958

VCEO = 160 V: 2SA1222/2SC2959

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	−160	V
Collector to emitter voltage	VCEO	−140/–160	V
Emitter to base voltage	VEBO	−5.0	V
Collector current (DC)	IC(DC)	−500	mA
Collector current (pulse)	IC(pulse)*	−1.0	A
Total power dissipation	PT	1.0	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	−55 to +150	°C

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter	Symbol		Conditions	MIN.	TYP.	MAX.	Unit
Collector cutoff current	ICBO	VCB = −100 V, IE = 0				−200	nA
Emitter cutoff current	IEBO	VEB = −5.0 V, IC = 0				−200	nA
DC current gain	hFE **	VCE = −2.0	V, IC = −100 mA	100	150	400
DC base voltage	VBE **	VCE = −5.0	V, IC = −20 mA	−0.6	−0.64	−0.7	V
Collector saturation voltage	VCE(sat) **	IC = −1.0 A, IB = −0.2 A			−0.6	−0.9	V
Base saturation voltage	VBE(sat) **	IC = −1.0 A, IB = −0.2 A			−1.1	−0.3	V
Output capacitance	Cob	VCB = −10	V, IE = 0, f = 1.0 MHz		24	40	pF
Gain bandwidth product	fT	VCE = −10	V, IE = 20 mA	30	45		MHz

** Pulse test PW ≤ 350 s, duty cycle ≤ 2% per pulsed

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)	©		20021998
Printed in Japan

°