DATA SHEET
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
(Tc = 25 °C)
P
Total power dissipation
Total power dissipation
Junction temperature T
Storage temperature T
T
(Ta = 25 °C)
P
T
*PW ≤ 300 µs, duty cycle ≤ 10%
CBO
CEO
EBO
C(DC)
C(pulse)
B(DC)
stg
*
j
−100
−100
−7.0
−7.0
−15
−3.5
40 W
1.5 W
150
−55 to +150 °C
°C
V
V
V
A
A
A
PACKAGE DRAWING (UNIT: mm)
Pin Connection
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage V
Collector to emitter voltage V
Collector to emitter voltage V
CEO(SUS)
CEX(SUS)1
CEX(SUS)2
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
CEX1
CEX2
Emitter cutoff current I
DC current gain h
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
CE(sat)
BE(sat)
Turn-on time t
Storage time t
Fall time t
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
IC = −5.0 A, IB1 = −0.5 A, L = 1 mH −100
IC = −5.0 A, IB1 = −IB2 = −0.5 A,
V
= 5.0 V, L = 180 µH, clamped
BE(OFF)
IC = −10 A, IB1 = −1.0 A, IB2 = −0.5 A,
V
= 5.0 V, L = 180 µH, clamped
BE(OFF)
VCB = −100 V, IE = 0 −10
CBO
VCE = −100 V, RBE = 51 Ω, Ta = 125 °C −1.0
CER
VCE = −100 V, V
VCE = −100 V, V
BE(OFF)
BE(OFF)
Ta = 125 °C
VEB = −5.0 V, IC = 0 −10
EBO
VCE = −5.0 V, IC = −0.5 A*
FE1
VCE = −5.0 V, IC = −3.0 A*
FE2
VCE = −5.0 V, IC = −5.0 A*
FE3
IC = −5.0 A, IB = −0.5 A* −0.6
IC = −5.0 A, IB = −0.5 A* −1.5
IC = −5.0 A, RL = 10 Ω,
on
I
= −IB2 = −0.5 A, VCC ≅ −50 V
stg
B1
Refer to the test circuit.
f
−100
−100
= 1.5 V −10
= 1.5 V,
−1.0
40 200
40 200
20
0.5
1.5
0.5
2SA1010
V
V
V
A
µ
mA
A
µ
mA
A
µ
V
V
s
µ
s
µ
s
µ
hFE CLASSIFICATION
Marking M L K
h
FE2
40 to 80 60 to 120 100 to 200
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
2 mm aluminum board,
no insulating board,
(W)
T
Total Power Dissipation P
Ambient Temperature Ta (°C)
grease coating, natural
air cooling
With infinite heatsink
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
2
Data Sheet D16118EJ2V0DS
2SA1010
C/W)
°
(
th(j-c)
θ
Derating dT (%)
C
I
Transient Thermal Resistance
Case Temperature TC (°C)
Pulse Width PW (ms)
(A)
C
(A)
C
Collector Current I
Collector Current I
Collector to Emitter Voltage VCE (V)
(V)
(V)
CE(sat)
FE
BE(sat)
Collector to Emitter Voltage VCE (V)
DC Current Gain h
Collector Current IC (A)
Base Saturation Voltage V
Collector Saturation Voltage V
Data Sheet D16118EJ2V0DS
Collector Current IC (A)
3
2SA1010
µ
s)
s)
µ
µ
s)
(
(
on
stg
(
f
Fall Time t
StorageTime t
Turn-On Time t
Collector Current IC (A)
Base current
waveform
Collector current
waveform
4
Data Sheet D16118EJ2V0DS
[MEMO]
2SA1010
Data Sheet D16118EJ2V0DS
5
2SA1010
•
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M8E 00. 4
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