NEC 2SA1010 Technical data

DATA SHEET

SILICON POWER TRANSISTOR

2SA1010

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

The 2SA1010 is a mold power transistor developed for high-

voltage high-speed switching, and is ideal for use as a driver in

devices such as switching regulators, DC/DC converters, and high-

frequency power amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2334

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)

Parameter Symbol Ratings Unit

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Collector current (DC) I

Collector current (pulse) I

Base current (DC) I

(Tc = 25 °C)

P

Total power dissipation

Total power dissipation

Junction temperature T

Storage temperature T

T

(Ta = 25 °C)

P

T

*PW ≤ 300 µs, duty cycle ≤ 10%

CBO

CEO

EBO

C(DC)

C(pulse)

B(DC)

stg

*

j

−100

−100

−7.0

−7.0

−15

−3.5

40 W

1.5 W

150

−55 to +150 °C

°C

V

V

V

A

A

A

PACKAGE DRAWING (UNIT: mm)

Pin Connection

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan

©

2002

ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector to emitter voltage V

Collector to emitter voltage V

Collector to emitter voltage V

CEO(SUS)

CEX(SUS)1

CEX(SUS)2

Collector cutoff current I

Collector cutoff current I

Collector cutoff current I

Collector cutoff current I

CEX1

CEX2

Emitter cutoff current I

DC current gain h

DC current gain h

DC current gain h

Collector saturation voltage V

Base saturation voltage V

CE(sat)

BE(sat)

Turn-on time t

Storage time t

Fall time t

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

IC = −5.0 A, IB1 = −0.5 A, L = 1 mH −100

IC = −5.0 A, IB1 = −IB2 = −0.5 A,

V

= 5.0 V, L = 180 µH, clamped

BE(OFF)

IC = −10 A, IB1 = −1.0 A, IB2 = −0.5 A,

V

= 5.0 V, L = 180 µH, clamped

BE(OFF)

VCB = −100 V, IE = 0 −10

CBO

VCE = −100 V, RBE = 51 Ω, Ta = 125 °C −1.0

CER

VCE = −100 V, V

VCE = −100 V, V

BE(OFF)

BE(OFF)

Ta = 125 °C

VEB = −5.0 V, IC = 0 −10

EBO

VCE = −5.0 V, IC = −0.5 A*

FE1

VCE = −5.0 V, IC = −3.0 A*

FE2

VCE = −5.0 V, IC = −5.0 A*

FE3

IC = −5.0 A, IB = −0.5 A* −0.6

IC = −5.0 A, IB = −0.5 A* −1.5

IC = −5.0 A, RL = 10 Ω,

on

I

= −IB2 = −0.5 A, VCC ≅ −50 V

stg

B1

Refer to the test circuit.

f

−100

−100

= 1.5 V −10

= 1.5 V,

−1.0

40 200

40 200

20

0.5

1.5

0.5

2SA1010

V

V

V

A

µ

mA

A

µ

mA

A

µ

V

V

s

µ

s

µ

s

µ

hFE CLASSIFICATION

Marking M L K

h

FE2

40 to 80 60 to 120 100 to 200

TYPICAL CHARACTERISTICS (Ta = 25°°°°C)

2 mm aluminum board,
no insulating board,

(W)

T

Total Power Dissipation P

Ambient Temperature Ta (°C)

grease coating, natural
air cooling

With infinite heatsink

(A)

C

Collector Current I

Collector to Emitter Voltage VCE (V)

2

Data Sheet D16118EJ2V0DS