Datasheet 2SA1008 Datasheet (NEC)

DATA SHEET

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

2SA1008

The 2SA1008 is a mold power transistor developed for high-speed

switching, and is ideal for use as a driver in devices such as switching

regulators, DC/DC converters, and high-frequency power amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2331

ABSOLUTE MAXIMUM RATINGS (TA = 25°°°°C)

Parameter Symbol Conditions Ratings Unit

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Collector current (DC) I

Collector current (pulse) I

Base current (DC) I

Total power dissipation P

Junction temperature T

Storage temperature T

C(pulse)

CBO

CEO

EBO

C(DC)

B(DC)

T

j

stg

PW ≤ 300 µs,
duty cycle ≤ 10%

TC = 25°C

TA = 25°C

−100

−100

−7.0

−2.0

−4.0

−1.0

15 W

1.5 W

150

−55 to +150 °C

°C

V

V

V

A

A

A

ORDERING INFORMATION

Part No. Package

2SA1008 TO-220AB

(TO-220AB)

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan

©

2002

ELECTRICAL CHARACTERISTICS (TA = 25°°°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

CBO

CER

EBO

FE1

FE2

on

stg

IC = −1.0 A, IB1 = −0.1 A, L = 1 mH −100

IC = −1.0 A, IB1 = −IB2 = −0.1 A,
V

= 5.0 V, L = 180 µH, clamped

BE(OFF)

IC = −2.0 A, IB1 = −0.2 A, IB2 = 0.1 A,
V

= 5.0 V, L = 180 µH, clamped

BE(OFF)

VCB = −100 V, IE = 0 A −10

VCE = −100 V, RBE = 51 Ω, TA = 125°C −1.0

VCE = −100 V, V

VCE = −100 V, V
T

= 125°C

A

BE(OFF)

BE(OFF)

VEB = −5.0 V, IC = 0 A −10

VCE = −5.0 V, IC = −0.1 A

VCE = −5.0 V, IC = −1.0 A

IC = −1.0 A, IB = −0.1 A

IC = −1.0 A, IB = −0.1 A

IC = −1.0 A, RL = 50 Ω,
I

= −IB2 = −0.1 A, VCC ≅ −50 V

B1

Refer to the test circuit.

f

Collector to emitter voltage V

Collector to emitter voltage V

Collector to emitter voltage V

Collector cutoff current I

Collector cutoff current I

Collector cutoff current I

Collector cutoff current I

Emitter cutoff current I

DC current gain h

DC current gain h

Collector saturation voltage V

Base saturation voltage V

Turn-on time t

Storage time t

Fall time t

Note Pulse test PW ≤ 350

CEO(SUS)

CEX(SUS)1

CEX(SUS)2

CEX1

CEX2

CE(sat)

BE(sat)

µ

s, duty cycle ≤ 2%

−100

−100

= 1.5 V −10

= 1.5 V,

Note

Note

Note

Note

40

40 200

−1.0

−0.6

−1.5

0.5

1.5

0.5

2SA1008

V

V

V

A

µ

mA

A

µ

mA

A

µ

V

V

s

µ

s

µ

s

µ

hFE CLASSIFICATION

Marking M L K

h

FE2

SWITCHING TIME (ton, t

40 to 80 60 to 120 100 to 200

, tf) TEST CIRCUIT

stg

Base current
waveform

Collector current
waveform

2

Data Sheet D14866EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°°°°C)

2.0 mm aluminum
board, no insulating

(W)

T

Total Power Dissipation P

board, silicon grease
coating

With infinite heatsink

(TC = 25 °C)

2SA1008

(A)

C

Collector Current I

Ambient Temperature TA (°C)

C/W)

°

(

th(j-c)

Collector to Emitter Voltage VCE (V)

Derating dT (%)

Case Temperature TC (°C)

Transient Thermal Resistance r

(A)

C

(A)

C

Pulse Width PW (ns)

Collector Current I

Collector to Emitter Voltage VCE (V)

Data Sheet D14866EJ2V0DS

Collector Current I

Collector to Emitter Voltage VCE (V)

3

2SA1008

F

ll

Ti

(

)

µ

(V)

Pulse test Pulse test

FE

DC Current Gain h

Collector Current IC (A)

s)

s)

µ

s

(

(

µ

on

stg

f

(V)

CE(sat )

BE(sat)

Base Saturation Voltage V

Collector Saturation Voltage V

Collector Current IC (A)

me t

a

StorageTime t

Turn-On Time t

Collector Current IC (A)

4

Data Sheet D14866EJ2V0DS

PACKAGE DRAWING (UNIT: mm)

1. Base

2. Collector

3. Emitter

4. Fin (collector)

2SA1008

Data Sheet D14866EJ2V0DS

5

2SA1008

•

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M8E 00. 4