NEC 2SA1008 Technical data
DATA SHEET
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
2SA1008
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (TA = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(pulse)
CBO
CEO
EBO
C(DC)
B(DC)
T
j
stg
PW ≤ 300 µs,
duty cycle ≤ 10%
TC = 25°C
TA = 25°C
−100
−100
−7.0
−2.0
−4.0
−1.0
15 W
1.5 W
150
−55 to +150 °C
°C
V
V
V
A
A
A
ORDERING INFORMATION
Part No. Package
2SA1008 TO-220AB
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
ELECTRICAL CHARACTERISTICS (TA = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
CBO
CER
EBO
FE1
FE2
on
stg
IC = −1.0 A, IB1 = −0.1 A, L = 1 mH −100
IC = −1.0 A, IB1 = −IB2 = −0.1 A,
V
= 5.0 V, L = 180 µH, clamped
BE(OFF)
IC = −2.0 A, IB1 = −0.2 A, IB2 = 0.1 A,
V
= 5.0 V, L = 180 µH, clamped
BE(OFF)
VCB = −100 V, IE = 0 A −10
VCE = −100 V, RBE = 51 Ω, TA = 125°C −1.0
VCE = −100 V, V
VCE = −100 V, V
T
= 125°C
A
BE(OFF)
BE(OFF)
VEB = −5.0 V, IC = 0 A −10
VCE = −5.0 V, IC = −0.1 A
VCE = −5.0 V, IC = −1.0 A
IC = −1.0 A, IB = −0.1 A
IC = −1.0 A, IB = −0.1 A
IC = −1.0 A, RL = 50 Ω,
I
= −IB2 = −0.1 A, VCC ≅ −50 V
B1
Refer to the test circuit.
f
Collector to emitter voltage V
Collector to emitter voltage V
Collector to emitter voltage V
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Turn-on time t
Storage time t
Fall time t
Note Pulse test PW ≤ 350
CEO(SUS)
CEX(SUS)1
CEX(SUS)2
CEX1
CEX2
CE(sat)
BE(sat)
µ
s, duty cycle ≤ 2%
−100
−100
= 1.5 V −10
= 1.5 V,
Note
Note
Note
Note
40
40 200
−1.0
−0.6
−1.5
0.5
1.5
0.5
2SA1008
V
V
V
A
µ
mA
A
µ
mA
A
µ
V
V
s
µ
s
µ
s
µ
hFE CLASSIFICATION
Marking M L K
h
FE2
SWITCHING TIME (ton, t
40 to 80 60 to 120 100 to 200
, tf) TEST CIRCUIT
stg
Base current
waveform
Collector current
waveform
2
Data Sheet D14866EJ2V0DS
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