DATA SHEET
SILICON SWITCHING DI ODE
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
1SS305
FEATURES
• Low capacitance: Ct
• High speed switching: t
• Wide applications including switching, limitter, clipper.
= 4.0 pF MAX.
= 3.0 ns MAX.
rr
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage V
DC Reverse Voltage V
Peak Forward Current I
Average Rectified Current I
DC Forward Current I
Maximum Temperatures
Junction Temperature T
Storage Temperature Range T
Thermal Resistance
Junction to Ambient R
RM
R
FM
O
F
j
stg
th(j-a)
100 V
100 V
300 mA
100 mA
100 mA
150 °C
–55 to + 150 °C
0.85 °C/mW
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2
+0.1
−0
0.65
0.3
2.0±0.20.9±0.1
0.3
0.65
1
Marking
0 to 0.1
3
+0.1
−0
0.3
+0.1
−0.05
0.15
CONNECTION DIAGRAM (Top View)
2
3
1
1. N.C.
2. Anode
3. Cathode
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Forward Voltage
Reverse Current I
Capacitance C
Reverse Recovery Time t
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
Marking : A14
F1
V
V
V
IF = 10 mA 720 850 mV
F2
IF = 50 mA 850 1000 mV
F3
IF = 100 mA 950 1200 mV
R
VR = 100 V 1.0
t
VR = 0 V, f = 1.0 MHz 2.0 4.0 pF
rr
IF = 10 mA, VR = 6 V, RL = 100 Ω,
µ
3.0 ns
A
See Test Circuit.
©
1987
TYPICAL CHARACTERISTICS (TA = 25°C)
1SS305
FORWARD CURRENT vs.
FORWARD V OLT A GE
1000
500
200
100
50
20
10
5.0
2.0
1.0
0.5
0.2
- Forward Current - mA
F
I
0.1
= 100˚C
A
T
= 25˚C
A
T
= −50˚C
A
T
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
V
F
- Forward Voltage - V
FORWARD V OLT A GE TEMPERATURE
COEFFICIENT vs. FORWARD CURRENT
3.0
0.005
- Reverse Current - µA
0.002
R
I
0.001
0.0005
0.0002
0.0001
REVERSE CURRENT vs.
REVERSE VOLT AGE
10
5.0
2.0
= 100˚C
A
T
1.0
0.5
0.2
0.1
0.05
0.02
= 25˚C
A
T
0.01
010203040506070
V
R - Reverse Voltage - V
TERMINAL CAPACITANCE vs.
REVERSE VOLT AGE
3.0
f = 1.0 MHz
A
= 25˚C
T
2.0
1.0
- Forward Voltage Temperature Coefficient - mV/˚C
F
0
∆V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
F
- Forward Current - mA
I
2.0
1.0
- Terminal Capacitance - pF
t
C
0
12 468102030
R
- Reverse Voltage - V
V
2
Data Sheet D16310EJ2V0DS