P4C422
ULTRA HIGH SPEED 256 x 4
STATIC CMOS RAM
FEATURES
P4C422
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35 ns (Commercial)
– 15/20/25 /35 ns (Military)
CMOS for Low Power
– 495 mW Max. – 10/12/15/20/25 (Commercial)
– 495 mW Max. – 15/20/25/35 (Military)
Single 5V±10% Power Supply
DESCRIPTION
The P4C422 is a 1,024-bit high-speed (10ns) Static RAM
with a 256 x 4 organization. The memory requires no
clocks or refreshing and has equal access and cycle
times. Inputs and outputs are fully TTL compatible.
Operation is from a single 5 Volt supply. Easy memory
expansion is provided by an active LOW chip select one
(CS1) and active HIGH chip select two (CS2) as well as 3state outputs.
Separate I/O
Fully TTL Compatible Inputs and Outputs
Resistant to single event upset and latchup
resulting from advanced process and design
improvements
Standard 22-pin 400 mil DIP, 24-pin 300 mil
SOIC, 24-pin LCC package and 24-pin CERPACK
package
In addition to very high performance and very high density, the device features latch-up protection, single event
and upset protection. The P4C422 is offered in several
packages: 22-pin 400 mil DIP (plastic and ceramic), 24pin 300 mil SOIC, 24-pin LCC and 24-pin CERPACK.
Devices are offered in both commercial and military
temperature ranges.
FUNCTIONAL BLOCK DIAGRAM
CS
2
CS
1
WE
D
D
D
D
A
A
A
A
A
A
A
A
0
1
2
3
0
1
2
3
4
5
6
7
CONTROL
DATA INPUT
ROW
DECODER
COLUMN
DECODER
32 X 32
ARRAY
SENSE AMPS
OE
O
O
O
O
0
1
2
3
PIN CONFIGURATIONS
1
A
A
A
A
A
A
A
GND
D
O
D
3
2
2
3
1
4
0
5
5
6
6
7
7
8
9
0
10
0
11
1
12
24
23
22
21
20
19
18
17
16
15
14
13
SOIC (S4)
CERPACK (F3) SIMILAR
TOP VIEW
1
V
A
WE
CS
OE
CS
O
D
O
D
O
NCNC
CC
4
3
3
2
2
1
A
3
A
2
A
1
A
0
1
A
5
A
6
2
A
7
GND
D
0
O
0
D
1
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
DIP (P3-1, D3-1)
TOP VIEW
V
CC
A
WE
CS
OE
CS
O
D
O
D
O
INDEX
GND
A
0
A
5
NC
A
6
A
7
A
4
5
6
7
8
9
D0D1D2O
4
1
2
3
3
2
2
1
V
WE
1A2A3A4
312 242322
CC
151413121110
O
0
O
1
CS
21
1
OE
20
CS
19
2
NC
18
O
17
3
D
16
3
2
LCC (L4)
TOP VIEW
Means Quality, Service and Speed
1Q97
P4C422
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Power Supply Pin with –0.5 to +7 V
Respect to GND
Terminal Voltage with –0.5 to
V
TERM
Respect to GND VCC +0.5 V
(up to 7.0V)
T
A
Operating Temperature –55 to +125 °C
RECOMMENDED OPERATING CONDITIONS
(1)
Symbol Parameter Value Unit
T
BIAS
Temperature Under –55 to +125 °C
Bias
T
STG
I
OUT
CAPACITANCES
Storage Temperature –65 to +150 °C
DC Output Current 20 mA
(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
(2)
Grade
Ambient Temp Gnd Vcc
Commercial 0°C to 70°C 0V 5.0V ±10%
Military –55°C to 125°C 0V 5.0V ±10%
Symbol Parameter Conditions Typ. Unit
C
IN
C
OUT
Input Capacitance VIN = 0V 5 pF
Output Capacitance V
= 0V 7 pF
OUT
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
Symbol Parameter Test Conditions Unit
V
OH
V
OL
V
IH
V
IL
V
CL
I
IX
I
OZ
I
OS
Output High Voltage I
Output Low Voltage I
= –5.2 mA, V
OH
= +8 mA, V
OL
Input High Voltage 2.1 V
Input Low Voltage 0.8 V
Input Clamp Diode Voltage IIN = –10 mA –1.5 V
Input Load Current GND≤ V
Output Current (High Z) VOL≤ V
IN
OUT
Output Short Circuit VCC= Max., V
Current
(3)
(2)
P4C422
Min Max
= Min. 2.4 V
CC
= Min. 0.4 V
CC
≤ V
CC
≤ V
Output Disabled –10 10 µA
OH ,
= GND 90 mA
OUT
–10 10 µA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.
4. This parameter is sampled and not 100% tested.
Dynamic Operating Current
Parameter
Temperature
Range
Commercial
Military
5. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for
6. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for
7. tW is measured at t
2
65
90
Unit
mA
mA
WSA
-15
90
90
= min.: t
-20
90
90
WSA
-25
65
90
is measured at tW = min.
-35
-10
90
N/A
20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified IOL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF
(15, 20, 25, 35) as in Fig. 1a and 1b respectively.
20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.
-12
90
N/A
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