71
P4C198/198L, P4C198A/198AL
P4C198/P4C198L, P4C198A/P4C198AL
ULTRA HIGH SPEED 16K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 12/15/20/25/35 ns (Industrial)
– 15/20/25/35/45 ns (Military)
Low Power Operation (Commercial/Military)
– 715 mW Active – 12/15
– 550/660 mW Active – 20/25/35/45/55
– 193/220 mW Standby (TTL Input)
– 83/110 mW Standby (CMOS Input) P4C198/198A
– 9 mW Standby (CMOS Input)
P4C198L/198AL (Military)
5V ± 10% Power Supply
Data Retention, 10 µA Typical Current from 2.0V
P4C198L/198AL (Military)
Output Enable & Chip Enable Control Functions
– Single Chip Enable P4C198
– Dual Chip Enable P4C198A
Common Inputs and Outputs
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP
– 24-Pin 300 mil SOJ (P4C198 only)
– 28-Pin 350 x 550 mil LCC (P4C198 only)
(P4C198A ONLY)
A
CE
WE
INPUT
DATA
CONTROL
ROW
SELECT
65,536-BIT
MEMORY
ARRAY
COLUMN I/O
A
AA
(8)
(6)
I/O
1
I/O
2
I/O
3
I/O
4
COLUMN
SELECT
(CE )
1
(CE )
2
OE
1Q97
Means Quality, Service and Speed
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
The P4C198/L and P4C198A/L are 65,536-bit ultra highspeed static RAMs organized as 16K x 4. Each device
features an active low Output Enable control to eliminate
data bus contention. The P4C198/L also have an active
low Chip Enable (the P4C198A/L have two Chip Enables,
both active low) for easy system expansion. The CMOS
memories require no clocks or refreshing and have equal
access and cycle times. Inputs are fully TTL-compatible.
The RAMs operate from a single 5V ± 10% tolerance
power supply. Data integrity is maintained with supply
DESCRIPTION
voltages down to 2.0V. Current drain is typically 10 µA
from a 2.0V supply.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
The P4C198/L and P4C198A/L are available in 24-pin 300
mil DIP and SOJ, and 28-pin 350 x 550 mil LCC packages
providing excellent board level densities.
DIP (P4, D4), SOJ (J4)
TOP VIEW
P4C198 (P4C198A)
LCC (L5)
TOP VIEW
P4C198 ONLY
I/O
2
CE
A
7
A
6
A
5
A
4
A
3
A
2
A
13
A
12
A
11
NC
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
25
26
A
10
A
9
228
A
0
NC
NC
V
CC
13
14 15 16
OE
GND
NC
WE
I/O
1
1
27
3
17
A
1
A
8
I/O
3
I/O
NC
A
4
A
7
A
0
A
1
A
2
A
3
A
5
A
6
A
13
A
12
A
11
A
10
A
9
NC (CE2)
I/O
4
V
CC
WE
GND
A
8
OE
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
I/O
3
I/O
2
I/O
1
CE (CE1)
72
P4C198/198L, P4C198A/198AL
CE1, CE2 ≥ VIH Mil.
V
CC
= Max., Ind./Com’l.
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ V
HC
MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
V
CC
Power Supply Pin with –0.5 to +7 V
Respect to GND
Terminal Voltage with –0.5 to
V
TERM
Respect to GND VCC +0.5 V
(up to 7.0V)
T
A
Operating Temperature –55 to +125 °C
Symbol Parameter Value Unit
T
BIAS
Temperature Under –55 to +125 °C
Bias
T
STG
Storage Temperature –65 to +150 °C
P
T
Power Dissipation 1.0 W
I
OUT
DC Output Current 50 mA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM ratingconditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE1, CE2 ≥ VIH Mil.
V
CC
= Max ., Ind./Com’l.
f = Max., Outputs Open
___
___
40
35
___
___
___
___
20
15
40
n/a
1.5
n/a
mA
mA
___
___
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Commercial
Grade(2)
Ambient
Temperature
GND
V
CC
0°C to +70°C
–40°C to +85°C
0V
0V
5.0V ± 10%
5.0V ± 10%
0V 5.0V ± 10%
–55°C to +125°C
Military
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
V
OUT
= 0V
5
7
Unit
pF
pF
CAPACITANCES
(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
n/a = Not Applicable
Symbol
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
VCC = Min., IIN = 18 mA
IOL = +10 mA, VCC = Min.
IOL = +8 mA, VCC = Min.
IOH = –4 mA, VCC = Min.
VCC = Max. Mil.
VIN = GND to VCC Com’l.
VCC = Max., CE = VIH, Mil.
V
OUT
= GND to VCC Com’l.
P4C198 / 198A
Min
2.2
–0.5
(3)
VCC –0.2
–0.5
(3)
2.4
–10
–5
–10
–5
Max
VCC +0.5
0.8
VCC +0.5
0.2
–1.2
0.4
+10
+5
+10
+5
P4C198L / 198AL
Min Max
2.2
–0.5
(3)
VCC –0.2
–0.5(3)
2.4
–5
n/a
–5
n/a
VCC +0.5
0.8
VCC +0.5
0.2
0.4
–1.2
+5
n/a
+5
n/a
Unit
V
V
V
V
V
V
V
V
µA
µA
Typ.
Industrial
0.5 0.5
73
P4C198/198L, P4C198A/198AL
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
198: CE = VIL, OE = V
IH
198A: CE1 = VIL, CE2 = VIL. OE = V
IH
DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only)
Typ.* Max
Symbol Parameter Test Condition Min VCC=V
CC
= Unit
2.0V 3.0V 2.0V 3.0V
V
DR
VCC for Data Retention 2.0 V
I
CCDR
Data Retention Current 10 15 600 900 µA
t
CDR
Chip Deselect to CE ≥V
CC
– 0.2V, 0 ns
Data Retention Time V
IN
≥ V
CC
– 0.2V or
t
R
†
Operation Recovery Time t
RC
§
ns
*T
A
= +25°C
§
tRC = Read Cycle Time
†
This parameter is guaranteed but not tested.
V
IN
≤ 0.2V
DATA RETENTION WAVEFORM
V
CC
V
IH
t
CDR
4.5V
V
DR
≥ 2V
4.5V
t
R
V
DR
V
IH
DATA RETENTION MODE
CE
(CE , or CE2 for the P4C198AL)
I
CC
Symbol Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
Military
–10
N/A
–12 –15 –20 –25 –35 –45
Unit
N/AmAmA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A 150155160170180
N/A 170 160 155 150 145
180 170 160 155 150 N/A N/A
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