NCE RFORM P4C1981-15DM, P4C1981-20DM, P4C1981-20LMB, P4C1981-45LMB, P4C1981-45DMB Datasheet

81

P4C1981/1981L, P4C1982/1982L

FEATURES

Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)

– 10/12/15/20/25 ns (Commercial)
– 12/15/20/25/35 ns (Industrial)
– 15/20/25/35/45 ns (Military)

Low Power Operation (Commercial/Military)
– 715 mW Active – 12/15
– 550/660 mW Active – 20/25/35/45
– 193/220 mW Standby (TTL Input)
– 83/110 mW Standby (CMOS Input) P4C1981/1981L
– 5.5 mW Standby (CMOS Input)

P4C1981L/82L (Military)

Output Enable and Dual Chip Enable Functions

5V ± 10% Power Supply
Data Retention with 2.0V Supply, 10 µA Typical

Current (P4C1981L/1982L (Military)
Separate Inputs and Outputs

– P4C1981/L Input Data at Outputs during Write
– P4C1982/L Outputs in High Z during Write

Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)

– 28-Pin 300 mil DIP, SOJ
– 28-Pin 350 x 550 mil LCC

1Q97

Means Quality, Service and Speed

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

The P4C1981/L and P4C1982/L are 65,536-bit (16Kx4)
ultra high-speed static RAMs similar to the P4C198, but
with separate data I/O pins. The P4C1981/L feature a
transparent write operation when OE is low; the outputs of
the P4C1982/L are in high impedance during the write
cycle. All devices have low power standby modes. The
RAMs operate from a single 5V ± 10% tolerance power
supply. With battery backup, data integrity is maintained
for supply voltages down to 2.0V. Current drain is typically
10 µA from 2.0V supply.

Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.

DESCRIPTION

CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby. For the P4C1982L and
P4C1981L, power is only 5.5 mW standby with CMOS
input levels. The P4C1981/L and P4C1982/L are mem­bers of a family of PACE RAM™ products offering fast
access times.

The P4C1981/L and P4C1982/L are available in 28-pin
300 mil DIP and SOJ, and in 28-pin 350x550 mil LCC
packages providing excellent board level densities.

DIP (P5, D5-2), SOJ (J5)

TOP VIEW

LCC (L5)

TOP VIEW

P4C1981/P4C1981L, P4C1982/P4C1982L
ULTRA HIGH SPEED 16K x 4
CMOS STATIC RAMS

A

0

A

3

A

4

A

5

A

6

A

7

A

8

I

1

O

4

1
2
3
4
5
6
7
8
9
10
11
12
13
14

28
27
26
25
24
23
22
21
20

19
18
17
16
15

A

12

CE

1

I

GND

A

13

A

11

V

CC

2

O

3

O

2

O

1

WE
CE

2

A

1

A

2

OE

A

10

A

9

I

4

I

3

P4C1981/ 1982

A

INPUT

DATA

CONTROL

ROW

SELECT

65,536-BIT

MEMORY

ARRAY

COLUMN I/O

A

AA

(8)

(6)

I

1

I

2

I

3

I

4

COLUMN

SELECT

P4C1982

P4C1981

CE2

O

1

O

2

O

3

O

4

WE

CE1

OE

A

2

A

3

A

5

A

6

A

7

A

8

I

1

I

2

O

4

A

12

A11A

10

A

9

GND

A

0

A

1

V

CC

26
25
24
23
22
21
20

4
5
6
7
8
9
10
11
12

19
18

13 17

327

1

152142816

CE

1

I

3

I

4

O

3

O

2

A

13

OE

CE

2

WE

O

1

A

4

82

P4C1981/1981L, P4C1982/1982L

CE

1

, CE2 ≥ V

HC,

Mil.

V

CC

= Max., Ind./Com’l.
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ V

HC

MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

V

CC

Power Supply Pin with –0.5 to +7 V
Respect to GND

Terminal Voltage with –0.5 to

V

TERM

Respect to GND VCC +0.5 V
(up to 7.0V)

T

A

Operating Temperature –55 to +125 °C

Symbol Parameter Value Unit

T

BIAS

Temperature Under –55 to +125 °C
Bias

T

STG

Storage Temperature –65 to +150 °C

P

T

Power Dissipation 1.0 W

I

OUT

DC Output Current 50 mA

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM ratingconditions for extended
periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.

3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

I

SB

Standby Power Supply
Current (TTL Input Levels)

CE

1

, CE2 ≥ VIH, Mil.
VCC = Max., Ind./Com’l.
f = Max., Outputs Open

___
___

40
35

___
___

___
___

20
15

40

n/a

1.0
n/a

mA

mA

___
___

Standby Power Supply
Current
(CMOS Input Levels)

Symbol

C

IN

C

OUT

Parameter

Input Capacitance
Output Capacitance

Conditions

VIN = 0V

V

OUT

= 0V

5
7

Unit

pF
pF

CAPACITANCES

(4)

VCC = 5.0V, TA = 25°C, f = 1.0MHz

n/a = Not Applicable

Symbol

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage

(2)

V

IH

V

IL

V

HC

V

LC

V

CD

V

OL

V

OH

I

LI

I

LO

Parameter

Input High Voltage
Input Low Voltage

CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage

(TTL Load)

Output High Voltage
(TTL Load)

Input Leakage Current

Output Leakage Current

Test Conditions

VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.

IOH = –4 mA, VCC = Min.

VCC = Max. Mil.
VIN = GND to VCC Com’l.

P4C1981 / 1982

Min

2.2

–0.5

(3)

VCC –0.2

–0.5

(3)

2.4

–10

–5

–10

–5

Max

VCC +0.5

0.8

VCC +0.5

0.2

–1.2

0.4

+10

+5

+10

+5

P4C1981L / 82L

Min Max

2.2

–0.5

(3)

VCC –0.2

–0.5

(3)

2.4

–5

n/a

–5

n/a

VCC +0.5

0.8

VCC +0.5

0.2

0.4

–1.2

+5

n/a
+5

n/a

Unit

V
V

V
V
V
V

V

µA

µA

Typ.

Industrial
Commercial

Grade(2)

Ambient

Temperature

GND

V

CC

–40°C to +85°C

0°C to +70°C

0V0V5.0V ± 10%

5.0V ± 10%

0V

5.0V ± 10%

–55°C to +125°C

Military

I

SB1

VCC = Max., Mil.

CE

1

, CE2 = VIH Ind./Com’l.
V

OUT

= GND to V

CC

83

P4C1981/1981L, P4C1982/1982L

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.

CE

1

= VIL, CE2 = VIL, OE = V

IH

I

CC

Symbol Parameter

Temperature

Range

Dynamic Operating Current*

Commercial

Industrial

Military

–10

N/A

–12 –15 –20 –25 –35 –45

Unit

N/AmAmA

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

N/A 150155160170180

N/A 170 160 155 150 145

180 170 160 155 150 N/A N/A

DATA RETENTION CHARACTERISTICS (P4C1981L/P4C1982L Military Temperature Only)

Typ.* Max

Symbol Parameter Test Condition Min VCC=V

CC

= Unit

2.0V 3.0V 2.0V 3.0V

V

DR

VCC for Data Retention 2.0 V

I

CCDR

Data Retention Current 10 15 600 900 µA

t

CDR

Chip Deselect to CE1 or CE

2

≥ V

CC

– 0.2V, 0 ns

Data Retention Time V

IN

≥ V

CC

– 0.2V or

t

R

†

Operation Recovery Time t

RC

§

ns

*T

A

= +25°C

§

tRC = Read Cycle Time

†

This parameter is guaranteed but not tested.

V

IN

≤ 0.2V

DATA RETENTION WAVEFORM

V

CC

DATA RETENTION WAVEFORM

V

IH

t

CDR

4.5V
V

DR

≥ 2V

4.5V
t

R

V

DR

V

IH

1348 07

DATA RETENTION MODE

CE1 or CE

2