NCE RFORM P4C1682-12JC, P4C1681-25SC, P4C1682-12PC, P4C1682-12SC, P4C1682-15JC Datasheet

41

P4C1681, P4C1682

P4C1681, P4C1682
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS

FEATURES

Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)

– 12/15/20/25 ns (Commercial)
– 20/25/35ns (P4C1682 Military)

Low Power Operation (Commercial)
– 715 mW Active – 12, 15
– 550 mW Active – 20/25/35
– 193 mW Standby (TTL Input)
– 83 mW Standby (CMOS Input)

Single 5V ± 10%Power Supply

Separate Inputs and Outputs
– P4C1681 Input Data at Outputs during Write
– P4C1682 Outputs in High Z during Write

Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)

– 24-Pin 300 mil DIP
– 24-Pin 300 mil SOIC
– 24-Pin 300 mil SOJ
– 24-Pin CERDIP
– 28-Pin LCC (450 mil x 450 mil)

.

DESCRIPTION

The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra
high speed static RAMs similar to the P4C168, but with
separate data I/O pins. The P4C1681 features a
transparent write operation; the outputs of the P4C1682
are in high impedance during the write cycle. All devices
have low power standby modes. The RAMs operate from
a single 5V ± 10% tolerance power supply.

Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.

CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby. For the P4C1682 and
P4C1681, power is only 83 mW standby with CMOS input
levels.

The P4C1681 and P4C1682 are available in 24-pin 300
mil DIP and SOIC packages providing excellent board
level densities. The P4C1682 is also available in a 28-pin
LCC package.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

A

INPUT

DATA

CONTROL

ROW

SELECT

16,384-BIT

MEMORY

ARRAY

COLUMN I/O

A

AA

(7)

(5)

I

1

I

2

I

3

I

4

COLUMN

SELECT

P4C1682

P4C1681

CE

O

1

O

2

O

3

O

4

WE

POWER

DOWN

1Q97

Means Quality, Service and Speed

DIP (P4,D4), SOIC (S4), SOJ (J4)

TOP VIEW

LCC (L5-1)
TOP VIEW

A

7

A

6

NC

NC

A

5

O

4

5
6

7
8
9
10
11

23
22

21
20
19

24

25

A

9

A

8

I

3

I

1

GND

CE

WE

O

1

A

4

1

2428

26

12

13 14 15

18

I

2

A

1

A

0

V

CC

A

11

A

2

327

16 17

A

3

A

10

O

2

O

3

NC

NC

I

4

I

3

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A

7

I

1

I

2

1
2
3
4
5
6
7
8
9
10
11
12

24
23
22
21
20
19
18
17
16

15
14
13

CE

GND

V

CC

A

11

A

10

A

9

A

8

O

4

WE

O

2

O

1

I

4

O

3

42

P4C1681, P4C1682

MAXIMUM RATINGS

1

Symbol Parameter Value Unit

V

CC

Power Supply Pin with –0.5 to +7 V
Respect to GND

Terminal Voltage with –0.5 to

V

TERM

Respect to GND VCC +0.5 V
(up to 7.0V)

T

A

Operating Temperature –55 to +125 °C

Symbol Parameter Value Unit

T

BIAS

Temperature Under –55 to +125 °C
Bias

T

STG

Storage Temperature –65 to +150 °C

P

T

Power Dissipation 1.0 W

I

OUT

DC Output Current 50 mA

P4C1681
P4C1682

Sym.

V

IH

V

IL

V

HC

V

LC

V

CD

V

OL

V

OLC

V

OH

V

OHC

I

LI

I

LO

Parameter

Input High Voltage
Input Low Voltage

CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage

(TTL Load)
Output Low Voltage

(CMOS Load)
Output High Voltage

(TTL Load)
Output High Voltage

(CMOS Load)
Input Leakage Current

Output Leakage Current

Test Conditions

VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.

I

OLC

= +100 µA, VCC = Min.

IOH = –4 mA, VCC = Min.

I

OHC

= –100 µA, VCC = Min.

VCC = Max. Mil.
VIN = GND to V

CC

Comm'l

VCC = Max. Mil.
CE = V

IH

Comm'l

V

OUT

= GND to V

CC

Min

2.2

–0.5

(3)

VCC –0.2

–0.5

(3)

2.4

VCC –0.2

–10

–5

–10

–5

Max

VCC +0.5

0.8

VCC +0.5

0.2

–1.2

0.4

0.2

+10

+5

+10

+5

Unit

V
V

V
V
V
V

V

V

V

µA
µA

µA
µA

DC ELECTRICAL CHARACTERISTICS

Over Recommended operating temperature and supply voltages(2)

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Grade(2)

Ambient

Temperature

GND

V

CC

0V

5.0V ± 10%

–55°C to +125°C

Military

Symbol

C

IN

C

OUT

Parameter

Input Capacitance
Output Capacitance

Conditions

VIN = 0V

V

OUT

= 0V

5
7

Unit

pF
pF

CAPACITANCES

(4)

VCC = 5.0V, TA = 25°C, f = 1.0MHz

Typ.

5.0V ± 10%0°C to +70°C

Commercial

0V

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.

3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

43

P4C1681, P4C1682

Symbol Parameter Test Conditions Unit

POWER DISSIPATION CHARACTERISTICS

Over recommended operating temperature and supply voltage

(2)

P4C1681
P4C1682

Min Max

I

CC

Dynamic Operating VCC = Max., f = Max.,
Current – 12, 15 Outputs Open Comm'l — 130 mA

I

CC

Dynamic Operating VCC = Max., f = Max., Mil. – 130 mA
Current – 20, 25, 35 Outputs Open Comm'l — 100 mA

I

SB

Standby Power Supply CE ≥ VIH,
Current (TTL Input Levels) VCC = Max., — 35 mA

f = Max., Outputs Open

I

SB1

Standby Power Supply CE ≥ VHC,
Current VCC = Max., — 15 mA
(CMOS Input Levels) f = 0, Outputs Open,

VIN ≤ VLC or VIN ≥ V

HC

44

P4C1681, P4C1682

Notes:

5. WE is HIGH for READ cycle.

6. CE, OE are LOW for READ cycle.

7. ADDRESS must be valid prior to, or coincident with, CE
transition LOW.

-12 -15 -20 -25 -35

Min Max Min Max Min Max Min Max Min Max

t

RC

Read Cycle Time 12 15 20 25 35 ns

t

AA

Address Access 12 15 20 25 35 ns
Timens

t

AC

Chip Enable 12 15 20 25 35 ns
Access Time

t

OH

Output Hold from 2 2 3 3 3 ns
Address Change

t

LZ

Chip Enable to 2 2 3 3 3 ns
Output in Low Z

t

HZ

Chip Disable to 6 7 9 10 15 ns
Output in High Z

t

RCS

Read Command 0 0 0 0 0 ns
Setup Time

t

RCH

Read Command 0 0 0 0 0 ns
Hold Time

t

PU

Chip Enable to 0 0 0 0 0 ns
Power Up Time

t

PD

Chip Disable to 12 15 20 25 25 ns
Power Down Time

READ CYCLE NO. 1 (ADDRESS controlled)

(5, 6)

READ CYCLE NO. 2 (

CECE

CECE

CE controlled)

(5, 7)

8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.

9. Read Cycle Time is measured from the last valid address to the first
transitioning address.

Symbol Parameter Unit

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(VCC = 5V ± 10%, All Temperature Ranges)

(2)

1552 Tbl 10

t

DATA OUT

AC

t

RC

t

LZ

DATA VALID

I

CC

I

SB

t

PU

HIGH IMPEDANCE

t

PD

(3)

(8)

t

HZ

SUPPLY

CC

CURRENT

V

CE

t

RCS

t

RCH

WE

t

ADDRESS

DATA OUT

AA

t

t

OH

DATA VALIDPREVIOUS DATA VALID

(9)

RC

45

P4C1681, P4C1682

-12 -15 -20 -25 -35

Min Max Min Max Min Max Min Max Min Max

t

WC

Write Cycle Time 12 15 18 20 30 ns

t

CW

Chip Enable Time 12 15 18 20 25 ns
to End of Write

t

AW

Address Valid to 12 15 18 20 25 ns
End of Write

t

AS

Address Set-up 0 0 0 0 0 ns
Time

t

WP

Write Pulse Width 12 15 18 20 25 ns

t

AH

Address Hold 0 0 0 0 0 ns
Time

t

DW

Data Valid to 7 8 10 10 15 ns
End of Write

t

DH

Data Hold Time 0 0 0 0 0 ns

t

WZ

Write Enable to 4 5 7 7 13 ns
Output in High Z

†

t

OW

Output Active to 0 0 0 0 0 ns
End of Write

t

AWE

Write Enable to 12 15 20 25 30 ns
Data-out Valid

£

t

ADV

Data-in Valid to 12 15 20 25 30 ns
Data-out Valid

†

P4C1682 only.

£

P4C1681 only.

AC ELECTRICAL CHARACTERISTICS—WRITE CYCLE

(VCC = 5V ± 10%, All Temperature Ranges)

(2)

12.Write Cycle Time is measured from the last valid address to the
first transitioning address.

10.CE and WE must be LOW for WRITE cycle.

11.If CE goes HIGH simultaneously with WE HIGH, the output
remains in a high impedance state.

Symbol Parameter Unit

WRITE CYCLE NO. 1 (

WEWE

WEWE

WE controlled)

(10)

t

ADDRESS

t

WC

DATA VALID

HIGH IMPEDANCE

WE

DATA IN

DATA OUT

P4C1682

DATA UNDEFINED

(12)

(8)

t

CW

t

AW

t

WP

t

DW

t

WR

t

AH

t

DH

t

OW

t

AS

WZ

(8,11)

t

AWE

DATA VALID

DATA OUT

P4C1681

t

ADV

CE

(8)

Notes:

46

P4C1681, P4C1682

SELECTION GUIDE

The P4C1681 and P4C1682 are available in the following temperature, speed and package options.

Temperature
Range

Commercial

Plastic DIP
SOIC
SOJ

Speed (ns)

12

-12PC

-12SC

-12JC

15

-15PC

-15SC

-15JC

20

-20PC

-20SC

-20JC

25

-25PC

-25SC

-25JC

35

N/A
N/A
N/A

Package

Military
Processed*

(P4C1682 Only)

N/A
N/A

-20LMB

-20DMB

-25LMB

-25DMB

Military Temp.

LCC
CERDIP

N/A
N/A

-35LMB

-35DMB

LCC
CERDIP

N/A
N/A

N/A
N/A

-20LM

-20DM

-25LM

-25DM

-35LM

-35DM

* Military temperature range with MIL-STD-883 Revision D, Class B processing.
N/A = Not available

ORDERING INFORMATION

P4C

Static RAM Prefix

1682

l —ssp t

Temperature Range
Package Code
Speed (Access/Cycle Time)

Low Power Designator
Blank = None; L = Low Power

Device Number

= Ultra-low standby power designator L, if available.
= Speed (access/cycle time in ns), e.g., 25, 35
= Package code, i.e., P, D, S, L.
= Temperature range, i.e., C, M, MB.

l
ss
p
t

P4C 1681

PACKAGE SUFFIX

Package

Suffix

P Plastic DIP, 300 mil wide standard

J Plastic SOJ

D CERDIP, 300 mil wide standard
S Small Outline IC
L LCC Package

Description

Description

TEMPERATURE RANGE SUFFIX

Temperature

Range Suffix

C Commercial Temperature Range,

–0°C to +70°C.

M Military Temperature Range,

–55°C to +125°C.

MB Mil. Temp. with MIL-STD-883C

Class D compliance

(P4C1682 Only)