NCE RFORM P4C1682-12JC, P4C1681-25SC, P4C1682-12PC, P4C1682-12SC, P4C1682-15JC Datasheet

41

P4C1681, P4C1682

P4C1681, P4C1682
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS

FEATURES

Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)

– 12/15/20/25 ns (Commercial)
– 20/25/35ns (P4C1682 Military)

Low Power Operation (Commercial)
– 715 mW Active – 12, 15
– 550 mW Active – 20/25/35
– 193 mW Standby (TTL Input)
– 83 mW Standby (CMOS Input)

Single 5V ± 10%Power Supply

Separate Inputs and Outputs
– P4C1681 Input Data at Outputs during Write
– P4C1682 Outputs in High Z during Write

Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)

– 24-Pin 300 mil DIP
– 24-Pin 300 mil SOIC
– 24-Pin 300 mil SOJ
– 24-Pin CERDIP
– 28-Pin LCC (450 mil x 450 mil)

.

DESCRIPTION

The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra
high speed static RAMs similar to the P4C168, but with
separate data I/O pins. The P4C1681 features a
transparent write operation; the outputs of the P4C1682
are in high impedance during the write cycle. All devices
have low power standby modes. The RAMs operate from
a single 5V ± 10% tolerance power supply.

Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.

CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby. For the P4C1682 and
P4C1681, power is only 83 mW standby with CMOS input
levels.

The P4C1681 and P4C1682 are available in 24-pin 300
mil DIP and SOIC packages providing excellent board
level densities. The P4C1682 is also available in a 28-pin
LCC package.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

A

INPUT

DATA

CONTROL

ROW

SELECT

16,384-BIT

MEMORY

ARRAY

COLUMN I/O

A

AA

(7)

(5)

I

1

I

2

I

3

I

4

COLUMN

SELECT

P4C1682

P4C1681

CE

O

1

O

2

O

3

O

4

WE

POWER

DOWN

1Q97

Means Quality, Service and Speed

DIP (P4,D4), SOIC (S4), SOJ (J4)

TOP VIEW

LCC (L5-1)
TOP VIEW

A

7

A

6

NC

NC

A

5

O

4

5
6

7
8
9
10
11

23
22

21
20
19

24

25

A

9

A

8

I

3

I

1

GND

CE

WE

O

1

A

4

1

2428

26

12

13 14 15

18

I

2

A

1

A

0

V

CC

A

11

A

2

327

16 17

A

3

A

10

O

2

O

3

NC

NC

I

4

I

3

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A

7

I

1

I

2

1
2
3
4
5
6
7
8
9
10
11
12

24
23
22
21
20
19
18
17
16

15
14
13

CE

GND

V

CC

A

11

A

10

A

9

A

8

O

4

WE

O

2

O

1

I

4

O

3

42

P4C1681, P4C1682

MAXIMUM RATINGS

1

Symbol Parameter Value Unit

V

CC

Power Supply Pin with –0.5 to +7 V
Respect to GND

Terminal Voltage with –0.5 to

V

TERM

Respect to GND VCC +0.5 V
(up to 7.0V)

T

A

Operating Temperature –55 to +125 °C

Symbol Parameter Value Unit

T

BIAS

Temperature Under –55 to +125 °C
Bias

T

STG

Storage Temperature –65 to +150 °C

P

T

Power Dissipation 1.0 W

I

OUT

DC Output Current 50 mA

P4C1681
P4C1682

Sym.

V

IH

V

IL

V

HC

V

LC

V

CD

V

OL

V

OLC

V

OH

V

OHC

I

LI

I

LO

Parameter

Input High Voltage
Input Low Voltage

CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage

(TTL Load)
Output Low Voltage

(CMOS Load)
Output High Voltage

(TTL Load)
Output High Voltage

(CMOS Load)
Input Leakage Current

Output Leakage Current

Test Conditions

VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.

I

OLC

= +100 µA, VCC = Min.

IOH = –4 mA, VCC = Min.

I

OHC

= –100 µA, VCC = Min.

VCC = Max. Mil.
VIN = GND to V

CC

Comm'l

VCC = Max. Mil.
CE = V

IH

Comm'l

V

OUT

= GND to V

CC

Min

2.2

–0.5

(3)

VCC –0.2

–0.5

(3)

2.4

VCC –0.2

–10

–5

–10

–5

Max

VCC +0.5

0.8

VCC +0.5

0.2

–1.2

0.4

0.2

+10

+5

+10

+5

Unit

V
V

V
V
V
V

V

V

V

µA
µA

µA
µA

DC ELECTRICAL CHARACTERISTICS

Over Recommended operating temperature and supply voltages(2)

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Grade(2)

Ambient

Temperature

GND

V

CC

0V

5.0V ± 10%

–55°C to +125°C

Military

Symbol

C

IN

C

OUT

Parameter

Input Capacitance
Output Capacitance

Conditions

VIN = 0V

V

OUT

= 0V

5
7

Unit

pF
pF

CAPACITANCES

(4)

VCC = 5.0V, TA = 25°C, f = 1.0MHz

Typ.

5.0V ± 10%0°C to +70°C

Commercial

0V

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.

3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.