SCAN182245A
Non-Inverting Transceiver with
25X Series Resistor Outputs
SCAN182245A Transceiver with 25X Series Resistor Outputs
February 1996
General Description
The SCAN182245A is a high performance BiCMOS bidirectional line driver featuring separate data inputs organized
into dual 9-bit bytes with byte-oriented output enable and
direction control signals. This device is compliant with
IEEE 1149.1 Standard Test Access Port and Boundary
Scan Architecture with the incorporation of the defined
boundary-scan test logic and test access port consisting of
Test Data Input (TDI), Test Data Out (TDO), Test Mode Select (TMS), and Test Clock (TCK).
Connection Diagram
Features
Y
High performance BiCMOS technology
Y
25X series resistors in outputs eliminate the need for
external terminating resistors
Y
Dual output enable control signals
Y
TRI-STATEÉoutputs for bus-oriented applications
Y
25 mil pitch SSOP (Shrink Small Outline Package)
Y
IEEE 1149.1 (JTAG) Compliant
Y
Includes CLAMP, IDCODE and HIGHZ instructions
Y
Additional instructions SAMPLE-IN, SAMPLE-OUT and
EXTEST-OUT
Y
Power Up TRI-STATE for hot insert
Y
Member of National’s SCAN Products
Pin NamesDescription
A1
(0–8)
B1
(0–8)
A2
(0–8)
B2
(0–8)
G1
,G2Output Enable Pins (Active Low)
DIR1, DIR2 Direction of Data Flow Pins
Side A1 Inputs or TRI-STATE Outputs
Side B1 Inputs or TRI-STATE Outputs
Side A2 Inputs or TRI-STATE Outputs
Side B2 Inputs or TRI-STATE Outputs
Order NumberDescription
SCAN182245ASSCSSOP in Tubes
SCAN182245ASSCXSSOP Tape and Reel
SCAN182245AFMQBFlatpak Military
TL/F/11657– 1
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1996 National Semiconductor CorporationRRD-B30M36/Printed in U. S. A.
TL/F/11657
http://www.national.com
Truth Tables
Inputs
²
G1DIR1
LL H
LL L
LH H
LH L
HX Z Z
A1
(0–8)B1(0–8)
w
w
x
x
H
L
H
L
Functional Description
The SCAN182245A consists of two sets of nine non-inverting bidirectional buffers with TRI-STATE outputs and is intended for bus-oriented applications. Direction pins (DIR1
and DIR2) LOW enables data from B ports to A ports, when
HIGH enables data from A ports to B ports. The Output
Enable pins (G1
ports by placing them in a high impedance condition.
and G2) when HIGH disables both A and B
Inputs
²
G2DIR2
LL H
LL L
LH H
LH L
HX Z Z
e
H
HIGH Voltage Level
e
LOW Voltage Level
L
e
Immaterial
X
e
High Impedance
Z
e
²
Inactive-to-Active transition must occur to enable outputs upon
power-up.
Block Diagrams
A2
(0–8)B2(0–8)
w
w
x
x
H
L
H
L
A1, B1, G1 and DIR1
Note: BSR stands for Boundary Scan Register.
http://www.national.com2
TL/F/11657– 2
Block Diagrams (Continued)
Tap Controller
TL/F/11657– 18
A2, B2, G2 and DIR2
Note: BSR stands for Boundary Scan Register.
TL/F/11657– 3
http://www.national.com3
Description of BOUNDARY-SCAN Circuitry
The scan cells used in the BOUNDARY-SCAN register are
one of the following two types depending upon their location. Scan cell TYPE1 is intended to solely observe system
data, while TYPE2 has the additional ability to control system data. (See IEEE Standard 1149.1
further description of scan cell TYPE1 and
a further description of scan cell TYPE2.)
Scan cell TYPE1 is located on each system input pin while
scan cell TYPE2 is located at each system output pin as
well as at each of the two internal active-high output enable
signals. AOE controls the activity of the A-outputs while
BOE controls the activity of the B-outputs. Each will activate
their respective outputs by loading a logic high.
The BYPASS register is a single bit shift register stage identical to scan cell TYPE1. It captures a fixed logic low.
Bypass Register Scan Chain Definition
SCAN182245A Product IDCODE
(32-Bit Code per IEEE 1149.1)
Version Entity
0000 111111 0000000000 000000011111
MSBLSB
Logic 0
PartManufacturer Required by
NumberID1149.1
Figure 10-11
Figure 10-12
TL/F/11657– 17
for a
for
The INSTRUCTION register is an 8-bit register which captures the default value of 10000001 (SAMPLE/PRELOAD)
during the CAPTURE-IR instruction command. The benefit
of capturing SAMPLE/PRELOAD as the default instruction
during CAPTURE-IR is that the user is no longer required to
shift in the 8-bit instruction for SAMPLE/PRELOAD. The sequence of: CAPTURE-IR
will update the SAMPLE/PRELOAD instruction. For more
information refer to the section on instruction definitions.
x
EXIT1-IR
Instruction Register Scan Chain Definition
MSBxLSB
Instruction CodeInstruction
00000000EXTEST
10000001SAMPLE/PRELOAD
10000010CLAMP
00000011HIGH-Z
01000001SAMPLE-IN
01000010SAMPLE-OUT
00100010EXTEST-OUT
10101010IDCODE
11111111BYPASS
All OthersBYPASS
x
UPDATE-IR
TL/F/11657– 10
http://www.national.com4
Description of BOUNDARY-SCAN Circuitry (Continued)
Scan Cell TYPE1
Scan Cell TYPE2
TL/F/11657– 11
http://www.national.com5
TL/F/11657– 12
Description of BOUNDARY-SCAN Circuitry (Continued)
BOUNDARY-SCAN Register
Scan Chain Definition (80 Bits in Length)
http://www.national.com6
TL/F/11657– 32
Description of BOUNDARY-SCAN Circuitry (Continued)
Input BOUNDARY-SCAN Register
Scan Chain Definition (40 Bits in Length)
When Sample In is Active
TL/F/11657– 33
http://www.national.com7
Description of BOUNDARY-SCAN Circuitry (Continued)
Output BOUNDARY-SCAN Register
Scan Chain Definition (40 Bits in Length)
When Sample Out and EXTEST-Out are Active
http://www.national.com8
TL/F/11657– 34
Description of BOUNDARY-SCAN Circuitry (Continued)
SCAN ABT Live Insertion and Power Cycling Characteristics
SCAN ABT is intended to serve in Live Insertion backplane
applications. It provides 2nd Level Isolation
1
which indicates
that while external circuitry to control the output enable pin
is unnecessary, there may be a need to implement differential length backplane connector pins for V
well, pre-bias circuitry for backplane pins may be necessary
and GND. As
CC
to avoid capacitive loading effects during live insertion.
SCAN ABT provides control of output enable pins during
power cycling via the circuit in
trols the G
During
pin until VCCreaches a known level.
n
power-up
, when VCCramps through the 0.0V to 0.7V
Figure A
. It essentially con-
range, all internal device circuitry is inactive, leaving output
and I/O pins of the device in high impedance. From approximately 0.8V to 1.8V V
(POR), in
Figure A
, the Power-On-Reset circuitry,
CC
becomes active and maintains device
high impedance mode. The POR does this by providing a
low from its output that resets the flip-flop The output, Q
,of
the flip-flop then goes high and disables the NOR gate from
an incidental low input on the G
POR circuitry becomes inactive and ceases to control the
pin. After 1.8V VCC, the
n
flip-flop. To bring the device out of high impedance, the G
input must receive an inactive-to-active transition, a high-tolow transition on G
flip-flop. With a low on the Q
in this case to change the state of the
n
output of the flip-flop, the NOR
gate is free to allow propagation of a G
During
power-down
, the Power-On-Reset circuitry will become active and reset the flip-flop at approximately 1.8V
V
. Again, the Q output of the flip-flop returns to a high and
CC
disables the NOR gate from inputs from the G
device will then remain in high impedance for the remaining
ramp down from 1.8V to 0.0V V
Some suggestions to help the designer with live insertion
issues:
The Gnpin can float during power-up until the Power-On-
#
Reset circuitry becomes inactive.
The Gnpin can float on power-down only after the Pow-
#
er-On-Reset has become active.
The description of the functionality of the Power-On-Reset
circuitry can best be described in the diagram of
SCAN ABT includes additional power-on reset circuitry not otherwise included in ABT devices.
TL/F/11657– 19
TL/F/11657– 20
http://www.national.com11
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
Ceramic
Plastic
VCCPin Potential to
Ground Pin
Input Voltage (Note 2)
Input Current (Note 2)
b
65§Ctoa150§C
b
55§Ctoa125§C
b
55§Ctoa175§C
b
55§Ctoa150§C
b
0.5V toa7.0V
b
0.5V toa7.0V
b
30 mA toa5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-Off State
in the HIGH State
b
0.5V toa5.5V
b
0.5V to V
Current Applied to Output
in LOW State (Max)Twice the Rated I
(mA)
OL
DC Electrical Characteristics
SymbolParameterV
V
IH
V
IL
V
CD
V
OH
V
OL
I
IH
I
BVI
I
BVIT
I
IL
V
ID
a
I
IH
a
I
IL
I
OZH
I
OZL
Note 1: Guaranteed not tested.
Input HIGH Voltage2.0VRecognized HIGH Signal
Input LOW Voltage0.8VRecognized LOW Signal
Input Clamp Diode VoltageMin
Output HIGH VoltageMin2.5VI
MilMin2.0VI
CommMin2.0VI
Output LOW Voltage
MilMin0.8VI
CommMin0.8VI
Input HIGH Current
All Others
Max5mAV
Max5mAV
TMS, TDIMax5mAV
Input HIGH Current
Breakdown Test
Input HIGH Current
Breakdown Test (I/O)
Input LOW Current
All Others
Max7mA
Max100mA
Max
Max
TMS, TDIMax
Input Leakage Test
I
Output Leakage CurrentMax50mAV
OZH
I
Output Leakage CurrentMax
OZL
Output Leakage CurrentMax50mAV
Output Leakage CurrentMax
DC Latchup Source Current
Commercial
Military
Over Voltage Latchup (I/O)10V
ESD (HBM) Min.2000V
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Commercial
CC
CC
0.04.75V
Supply Voltage
Military
Commercial
Minimum Input Edge Rate(DV/Dt)
Data Input50 mV/ns
Enable Input20 mV/ns
MinTypMaxUnitsConditions
b
1.2VI
b
5mAV
b
5mAV
b
385mAV
b
50mAV
b
50mAV
b
500 mA
b
300 mA
b
55§Ctoa125§C
b
40§Ctoa85§C
a
4.5V toa5.5V
a
4.5V toa5.5V
eb
18 mA
IN
eb
3mA
OH
eb
24 mA
OH
eb
32 mA
OH
e
12 mA
OL
e
15 mA
OL
e
2.7V (Note 1)
IN
e
V
IN
CC
e
V
IN
CC
e
V
7.0V
IN
e
V
5.5V
IN
e
0.5V (Note 1)
IN
e
0.0V
IN
e
0.0V
IN
e
I
1.9 mA
ID
All Other Pins Grounded
e
2.7V
OUT
e
0.5V
OUT
e
2.7V
OUT
e
0.5V
OUT
http://www.national.com12
DC Electrical Characteristics (Continued)
SymbolParameterV
I
OS
I
CEX
I
ZZ
I
CCH
I
CCL
I
CCZ
I
CCT
Output Short-Circuit CurrentMax
Output HIGH Leakage CurrentMax50mAV
Bus Drainage Test
Power Supply CurrentMax250mAV
Power Supply CurrentMax65mAV
Power Supply CurrentMax250mATDI, TMSeV
Additional ICC/Input
All Other InputsMax2.9mAV
TDI, TMS inputsMax3mAV
I
CCD
Dynamic I
CC
No Load
Max1.0mAV
Max65.8mAV
Max1.0mATDI, TMSeGND
Max0.2
MinTypMaxUnitsConditions
CC
b
100
0.0100mA
AC Electrical Characteristics Normal Operation
MilitaryCommercial
SymbolParameter
t
t
t
t
t
t
PLH
PHL
PLZ
PHZ
PZL
PZH
Propagation Delay
AtoB,BtoA1.54.46.5
Disable Time
Enable Time
*Voltage Range 5.0Vg0.5V
V
*
CC
(V)
5.0
5.0
5.0
eb
T
55§Ctoa125§CT
A
e
C
50 pFC
L
MinTypMaxMinTypMax
b
275mAV
mA/Outputs Open
MHzOne Bit Toggling, 50% Duty Cycle
1.03.15.2
1.54.88.6
1.55.28.9
1.55.59.1
1.54.68.2
e
0.0V
OUT
e
V
OUT
e
V
5.5V
OUT
All Others GND
e
VCC; TDI, TMSeV
OUT
e
VCC; TDI, TMSeGND
OUT
e
LOW; TDI, TMSeV
OUT
e
LOW; TDI, TMSeGND
OUT
e
V
IN
CC
e
V
IN
CC
eb
40§Ctoa85§C
A
e
50 pF
L
CC
CC
CC
CC
b
2.1V
b
2.1V
Units
ns
ns
ns
http://www.national.com13
AC Electrical Characteristics Scan Test Operation
MilitaryCommercial
V
*
SymbolParameter
t
t
t
t
t
t
t
t
t
t
t
t
PLH
PHL
PLZ
PHZ
PZL
PZH
PLH
PHL
PLH
PHL
PLH
PHL
Propagation Delay
TCK to TDO4.27.712.1
Disable Time
TCK to TDO3.37.412.5
Enable Time
TCK to TDO2.86.811.5
Propagation Delay2.86.310.7
TCK to Data Out5.04.58.213.0
during Update-DR State
Propagation Delay3.37.212.2
TCK to Data Out5.05.09.314.8
during Update-IR State
Propagation Delay3.78.414.0
TCK to Data Out
during Test Logic
CC
(V)
5.0
5.0
5.0
5.0
Reset State
t
t
t
t
t
t
PLZ
PHZ
PLZ
PHZ
PLZ
PHZ
Disable Time2.87.613.9
TCK to Data Out5.03.58.414.5
during Update-DR State
Disable Time3.68.715.1
TCK to Data Out5.03.89.215.9
during Update-IR State
Disable Time4.09.817.1
TCK to Data Out
during Test Logic
5.0
Reset State
t
t
t
t
t
t
PZL
PZH
PZL
PZH
PZL
PZH
Enable Time4.49.315.5
TCK to Data Out5.03.07.513.3
during Update-DR State
Enable Time5.210.717.4
TCK to Data Out5.03.99.015.4
during Update-IR State
Enable Time5.712.019.8
TCK to Data Out
during Test Logic
5.0
Reset State
*Voltage Range 5.0Vg0.5V
All Propagation Delays involving TCK are measured from the falling edge of TCK.
eb
T
55§Ctoa125§CT
A
e
C
50 pFC
L
MinTypMaxMinTypMax
eb
40§Ctoa85§C
A
e
50 pF
L
2.96.110.2
2.15.910.7
4.68.713.7
5.710.817.2
4.29.916.6
3.010.217.6
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
http://www.national.com14
AC Operating Requirements Scan Test Operation
MilitaryCommercial
SymbolParameter
V
*
CC
(V)
eb
T
55§Ctoa125§CT
A
e
C
50 pFC
L
Guaranteed Minimum
t
S
t
H
t
S
t
H
t
S
t
H
t
S
t
H
t
S
t
H
t
S
t
H
t
W
f
max
t
PU
t
DN
*Voltage Range 5.0Vg0.5V
All Input Timing Delays involving TCK are measured from the rising edge of TCK.
Note 1: Timing pertains to the TYPE1 BSR and TYPE2 BSR after the buffer (BSR 0 –8, 9 –17, 18 –26, 27 –35, 36 –44, 45– 53, 54– 62, 63– 71).
Note 2: Timing pertains to BSR 74 and 78 only.
Note 3: Timing pertains to BSR 72, 73, 76 and 77 only.
Note 4: Timing pertains to BSR 75 and 79 only.
Setup Time
Data to TCK (Note 1)
Hold Time
Data to TCK (Note 1)
Setup Time, H or L
G1
,G2to TCK (Note 2)
Hold Time, H or L
TCK to G1
,G2(Note 2)
Setup Time, H or L
DIR1, DIR2 to TCK (Note 4)
Hold Time, H or L
TCK to DIR1, DIR2 (Note 4)
Setup Time
Internal OE to TCK (Note 3)
Hold Time, H or L
TCK to Internal OE (Note 3)
Setup Time, H or L
TMS to TCK
Hold Time, H or L
TCK to TMS
Setup Time, H or L
TDI to TCK
Hold Time, H or L
TCK to TDI
Pulse Width TCKH
Maximum TCK
Clock Frequency
Wait Time,
Power Up to TCK
5.04.8ns
5.02.5ns
5.04.1ns
5.01.7ns
5.04.2ns
5.02.3ns
5.03.8ns
5.02.3ns
5.08.7ns
5.01.5ns
5.06.7ns
5.05.0ns
5.0
L8.5
5.050MHz
5.0100ns
Power Down Delay0.0100ms
eb
A
40§Ctoa85§C
e
50 pF
L
10.2
Units
ns
Capacitance
SymbolParameterTypUnitsConditions, T
C
IN
C
(Note 1)Output Capacitance13.7pFV
I/O
Note 1: C
is measured at frequency fe1 MHz, per MIL-STD-883B, Method 3012.
SCAN182245A Transceiver with 25X Series Resistor Outputs
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or2. A critical component is any component of a life
systems which, (a) are intended for surgical implantsupport device or system whose failure to perform can
into the body, or (b) support or sustain life, and whosebe reasonably expected to cause the failure of the life
failure to perform, when properly used in accordancesupport device or system, or to affect its safety or
with instructions for use provided in the labeling, caneffectiveness.
be reasonably expected to result in a significant injury
to the user.
National SemiconductorNational SemiconductorNational SemiconductorNational Semiconductor
CorporationEuropeHong Kong Ltd.Japan Ltd.
1111 West Bardin RoadFax:
Arlington, TX 76017Email: europe.support@nsc.comOcean Centre, 5 Canton Rd.Fax: 81-043-299-2408
Tel: 1(800) 272-9959Deutsch Tel:
Fax: 1(800) 737-7018English Tel:
http://www.national.com
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Fran3ais Tel:
Italiano Tel:a49 (0) 180-534 16 80Fax: (852) 2736-9960