Datasheet LPC661 Datasheet (National Semiconductor)

查询LPC661供应商
LPC661 Low Power CMOS Operational Amplifier
General Description
The LPC661 CMOS operational amplifier is ideal for opera­tion from a single supply. It features a wide range of operat­ing supply voltage from +5V to +15V,rail-to-rail output swing and an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the supply current requirement is typically 55 µA.
This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier or the LPC662 data sheet for a Dual CMOS opera­tional amplifier with these same features.
Features
(Typical unless otherwise noted)
n Rail-to-rail output swing
n Low supply current 55 µA n Specified for 100 kand5kloads n High voltage gain 120 dB n Low input offset voltage 3 mV n Low offset voltage drift 1.3 µV/˚C n Ultra low input bias current 2 fA n Input common-mode range includes GND
,
OS
n Operating range from +5V to +15V n Low distortion 0.01%at 1 kHz n Slew rate 0.11 V/µs
Applications
n High-impedance buffer n Precision current-to-voltage converter n Long-term integrator n High-impedance preamplifier n Active filter n Sample-and-Hold circuit n Peak detector
LPC661 Low Power CMOS Operational Amplifier
May 1998
Connection Diagram
Ordering Information
Package Temperature Range NSC
8-Pin LPC661AIM M08A Tape and Reel
Small Outline LPC661IM Rail
8-Pin LPC661AMN LPC661AIN N08E Rail
Molded DIP LPC661IN
8-Pin DIP/SO
Military Industrial
−55˚C to +125˚C −40˚C to +85˚C
DS011227-1
Drawing
Transport
Media
© 1999 National Semiconductor Corporation DS011227 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage (V Differential Input Voltage Output Short Circuit to V Output Short Circuit to V Storage Temperature Range −65˚C to +150˚C Lead Temperature
(Soldering, 10 sec.) 260˚C Junction Temperature (Note 3) 150˚C Power Dissipation (Note 3) ESD Rating
(C=100 pF, R=1.5 k) 1000V Current at Input Pin
+−V−
) 16V
+
±
Supply Voltage
(Notes 2, 9)
(Note 2)
±
5mA
Current at Output Pin Voltage Input/Output Pin (V
+
) +0.3V, (V−) −0.3V
±
18 mA
Current at Power Supply Pin 35 mA
Operating Ratings (Note 1)
Supply Voltage 4.75V V Junction Temperature Range
LPC661AM −55˚C T LPC661AI −40˚C T LPC661I −40˚C T
Power Dissipation (Note 7)
Thermal Resistance (θ
) (Note 8)
JA
8-Pin DIP 101˚C/W 8-Pin SO 165˚C/W
+
15.5V
+125˚C
J
+85˚C
J
+85˚C
J
DC Electrical Characteristics
The following specifications apply for V face limits apply at the temperature extremes; all other limits T
+
=
5V, V
=
0V, V
=
1.5V, V
CM
J
=
25˚C.
=
2.5V, and R
O
=
1M unless otherwise noted. Bold-
L
LPC661AM LPC661AI LPC661I Units
Symbol Parameter Conditions Typ Limit Limit Limit
(Note 4) (Note 4) (Note 4)
V
Input Offset Voltage 1 3 3 6 mV
OS
3.5 3.3 6.3
TCV
Input Offset Voltage 1.3 µV/˚C
OS
Average Drift
I
Input Bias Current 0.002 20 pA
B
100 4 4 max
I
Input Offset Current 0.001 20 pA
OS
100 2 2 max
R
IN
Input Resistance
CMRR Common Mode 0V V
+
Rejection Ratio V
=
+PSRR Positive Power Supply 5V V
12.0V 83 70 70 63 dB
CM
15V 68 68 61 min
+
15V 83 70 70 63 dB
>
1 Tera
Rejection Ratio 68 68 61 min
−PSRR Negative Power Supply 0V V
−10V 94 84 84 74 dB
Rejection Ratio 82 83 73 min
+
V
Input Common Mode V
CM
=
5V and 15V −0.4 −0.1 −0.1 −0.1 V
Voltage Range for CMRR 50 dB 000max
+
V
− 1.9 V+− 2.3 V+− 2.3 V+− 2.3 V
A
Large Signal Sourcing 1000 400 400 300 V/mV
V
Voltage Gain R
=
100 k(Note 5) 250 300 200 min
L
+
V
− 2.6 V+− 2.5 V+− 2.5 min
Sinking 500 180 180 90 V/mV
=
R
100 k(Note 5) 70 120 70 min
L
Sourcing 1000 200 200 100 V/mV
=
R
5kΩ(Note 5) 150 160 80 min
L
Sinking 250 100 100 50 V/mV
=
R
5kΩ(Note 5) 35 60 40 min
L
(Limit)
www.national.com 2
DC Electrical Characteristics (Continued)
The following specifications apply for V face limits apply at the temperature extremes; all other limits T
+
Symbol Parameter Conditions Typ Limit Limit Limit
Output Swing V
V
O
R
V R
V R
V R
I
Output Current Sourcing, V
O
+
=
V
5V 12 14 11 min
Sinking, V
I
Output Current Sourcing, V
O
+
=
V
15V 19 25 20 min
Sinking, V (Note 9) 19 24 19 min
I
Supply Current V
S
V
=
5V, V
=
0V, V
=
1.5V, V
CM
J
=
25˚C.
=
2.5V, and R
O
=
1M unless otherwise noted. Bold-
L
LPC661AM LPC661AI LPC661I Units
(Note 4) (Note 4) (Note 4)
+
=
5V 4.987 4.970 4.970 4.940 V
=
100 kto 2.5V 4.950 4.950 4.910 min
L
0.004 0.030 0.030 0.060 V
0.050 0.050 0.090 max
+
=
5V 4.940 4.850 4.850 4.750 V
=
5kΩto 2.5V 4.750 4.750 4.650 min
L
0.040 0.150 0.150 0.250 V
0.250 0.250 0.350 max
+
=
15V 14.970 14.920 14.920 14.880 V
=
100 kto 7.5V 14.880 14.880 14.820 min
L
0.007 0.030 0.030 0.060 V
0.050 0.050 0.090 max
+
=
15V 14.840 14.680 14.680 14.580 V
=
5kΩto 7.5V 14.600 14.600 14.480 min
L
0.110 0.220 0.220 0.320 V
0.300 0.300 0.400 max
=
0V 22 16 16 13 mA
O
=
5V 21 16 16 13 mA
O
12 14 11 min
=
0V 40 19 28 23 mA
O
=
13V 39 19 28 23 mA
O
+
=
5V, V
=
1.5V 55 60 60 70 µA
O
70 70 85 max
+
=
15V, V
=
1.5V 58 75 75 90 µA
O
85 85 105 max
(Limit)
AC Electrical Characteristics
The following specifications apply for V
face limits apply at the temperature extremes; all other limits T
Symbol Parameter Conditions Typ Limit Limit Limit
+
=
5V, V
=
0V, V
=
CM
J
1.5V, V =
25˚C.
=
2.5V, and R
O
=
1M unless otherwise noted. Bold-
L
LPC661AM LPC661AI LPC661I Units
(Limit)
(Note 4) (Note 4) (Note 4)
SR Slew Rate (Note 6) 0.11 0.07 0.07 0.05 V/µs
0.04 0.05 0.03 min GBW Gain-Bandwidth Product 350 kHz φm Phase Margin 50 Deg G
Gain Margin 17 dB
M
e
Input Referred Voltage Noise F=1 kHz 42 nV/√Hz
n
i
Input Referred Current Noise F=1 kHz 0.0002 pA/√Hz
n
T.H.D. Total Harmonic Distortion F=1 kHz, A
=
R
L +
=
V
V
100 k,V 15V
=
−10 0.01 =
8V
O
PP
www.national.com3
%
AC Electrical Characteristics (Continued)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: Applies to bothsinglesupplyand split supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maxi­mum allowed junction temperature of 150˚C. Output currents in excess of
Note 3: The maximum power dissipation is a function of T (T
)/θJA.
J(max)–TA
Note 4: Limits are guaranteed by testing or correlation. Note 5: V+=15V, V Note 6: V+=15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates. Note 7: For operating at elevated temperatures the device must be derated based on the thermal resistance θ Note 8: All numbers apply for packages soldered directly into a PC board. Note 9: Do not connect output to V
CM
=
7.5V and R
connected to 7.5V. For sourcing tests, 7.5V VO≤ 11.5V. For sinking tests, 2.5V ≤ VO≤ 7.5V.
L
+
when V+is greater than 13V or reliability may be adversely affected.
J(max)
±
30 mA over long term may adversely affect reliability.
, θJAand TA. The maximum allowable power dissipation at any ambient temperature is P
=
JA
with P
)/θJA.
(T
D
J–TA
D
=
Typical Performance Characteristics V
Supply Current vs Supply Voltage
DS011227-26
Output Characteristics Current Sinking
DS011227-29
Input Bias Current vs Temperature
Output Characteristics Current Sourcing
=
±
S
7.5V, T
=
25˚C unless otherwise specified
A
Common-Mode Voltage Range vs Temperature
DS011227-27
DS011227-28
Input Voltage Noise vs Frequency
DS011227-30
DS011227-31
www.national.com 4
Typical Performance Characteristics V
=
±
S
7.5V, T
=
25˚C unless otherwise specified (Continued)
A
CMRR vs Frequency
Open-Loop Voltage Gain vs Temperature
Gain and Phase Responses vs Temperature
DS011227-32
DS011227-35
CMRR vs Temperature
Open-Loop Frequency Response
Gain Error (V
vs V
OUT
)
OS
DS011227-33
DS011227-36
Power Supply Rejection Ratio vs Frequency
DS011227-34
Gain and Phase Responses vs Load Capacitance
DS011227-37
Non-Inverting Slew Rate vs Temperature
DS011227-38
DS011227-39
DS011227-40
www.national.com5
Typical Performance Characteristics V
=
±
S
7.5V, T
=
25˚C unless otherwise specified (Continued)
A
Inverting Slew Rate vs Temperature
Inverting Large-Signal Pulse Response
DS011227-41
Large-Signal Pulse Non-Inverting Response
=
(A
+1)
V
DS011227-44
DS011227-42
Inverting Small-Signal Pulse Response
Non-Inverting Small Signal Pulse Response
=
(A
+1)
V
DS011227-45
DS011227-43
Stability vs Capacitive Load
Note: Avoid resistive loads of less than 500, as they may cause
instability.
www.national.com 6
DS011227-4
Stability vs Capacitive Load
DS011227-5
Application Hints
AMPLIFIER TOPOLOGY
The topology chosen for the LPC661 is unconventional (compared to general-purpose op amps) in that the tradi­tional unity-gain buffer output stage is not used; instead, the output is taken directly from the output of the integrator, to al­low rail-to-rail output swing. Since the buffer traditionally de­livers the power to the load, while maintaining high op amp gain and stability, and must withstand shorts to either rail, these tasks now fall to the integrator.
As a result of these demands, the integrator is a compound affair with an embedded gain stage that is doubly fed forward (via C
and Cff) by a dedicated unity-gain compensation
f
driver. In addition, the output portion of the integrator is a push-pull configuration for delivering heavy loads. While sinking current the whole amplifier path consists of three gain stages with one stage fed forward, whereas while sourcing the path contains four gain stages with two fed forward.
DS011227-6
FIGURE 1. LPC661 Circuit Topology
The large signal voltage gain while sourcing is comparable to traditional bipolar op amps, for load resistance of at least 5kΩ. The gain while sinking is higher than most CMOS op amps, due to the additional gain stage; however, when driv­ing load resistance of 5 kor less, the gain will be reduced as indicated in the Electrical Characteristics. The op amp can drive load resistance as low as 500without instability.
COMPENSATING INPUT CAPACITANCE
Refer to the LMC660 or LMC662 datasheets to determine whether or not a feedback capacitor will be necessary for compensation and what the value of that capacitor would be.
CAPACITIVE LOAD TOLERANCE
Like many other op amps, the LPC661 may oscillate when its applied load appears capacitive. The threshold of oscilla­tion varies both with load and circuit gain. The configuration most sensitive to oscillation is a unity-gain follower. See the Typical Performance Characteristics.
The load capacitance interacts with the op amp’s output re­sistance to create an additional pole. If this pole frequency is sufficiently low, it will degrade the op amp’s phase margin so that the amplifier is no longer stable at low gains. The addi­tion of a small resistor (50to 100) in series with the op amp’s output, and a capacitor (5 pF to 10 pF) from inverting input to output pins, returns the phase margin to a safe value without interfering with lower-frequency circuit operation. Thus, larger values of capacitance can be tolerated without oscillation. Note that in all cases, the output will ring heavily when the load capacitance is near the threshold for oscillation.
DS011227-7
FIGURE 2. Rx, Cx Improve Capacitive Load Tolerance
Capacitive load driving capability is enhanced by using a pull up resistor to V
+
(
Figure 3
). Typically a pull up resistor con­ducting 50 µA or more will significantly improve capacitive load responses. The value of the pull up resistor must be de­termined based on the current sinking capability of the ampli­fier with respect to the desired output swing. Open loop gain of the amplifier can also be affected by the pull up resistor (see Electrical Characteristics).
DS011227-24
FIGURE 3. Compensating for Large
Capacitive Loads with A Pull Up Resistor
PRINTED-CIRCUIT-BOARD LAYOUT FOR HIGH-IMPEDANCE WORK
It is generally recognized that any circuit which must operate with less than 1000 pA of leakage current requires special layout of the PC board. When one wishes to take advantage of the ultra-low bias current of the LPC661, typically less than 0.04 pA, it is essential to have an excellent layout. For­tunately, the techniques for obtaining low leakages are quite simple. First, the user must not ignore the surface leakage of the PC board, even though it may sometimes appear accept­ably low, because under conditions of high humidity or dust or contamination, the surface leakage will be appreciable.
To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the LPC661’s inputs and the terminals of capacitors, diodes, conductors, resistors, relay terminals, etc. connected to the op-amp’s inputs. See
4
. To have a significant effect, guard rings should be placed
Figure
on both the top and bottom of the PC board. This PC foil must then be connected to a voltage which is at the same voltage as the amplifier inputs, since no leakage current can flow between two points at the same potential. For example, a PC board trace-to-pad resistance of 10
12
, which is nor­mally considered a very large resistance, could leak 5 pA if the trace were a 5V bus adjacent to the pad of an input. This would cause a 100 times degradation from the LPC660’s ac­tual performance. However, if a guard ring is held within 5 mV of the inputs, then even a resistance of 10
11
would
cause only 0.05 pA of leakage current, or perhaps a minor
www.national.com7
Application Hints (Continued)
(2:1) degradation of the amplifier’s performance. See
ures 5, 6, 7
for typical connections of guard rings for stan-
FIGURE 4. Example of Guard Ring in P.C. Board Layout, Using the LPC660
Fig-
dard op-amp configurations. If both inputs are active and at high impedance, the guard can be tied to ground and still provide some protection; see
DS011227-8
Figure 8
.
DS011227-9
FIGURE 5. Inverting Amplifier
Guard Ring Connections
DS011227-10
FIGURE 6. Non-Inverting Amplifier
Guard Ring Connections
www.national.com 8
DS011227-11
FIGURE 7. Follower
Guard Ring Connections
DS011227-12
FIGURE 8. Howland Current Pump
Guard Ring Connections
The designer should be aware that when it is inappropriate to lay out a PC board for the sake of just a few circuits, there is another technique which is even better than a guard ring on a PC board: Don’t insert the amplifier’s input pin into the board at all, but bend it up in the air and use only air as an in­sulator. Air is an excellent insulator. In this case you may have to forego some of the advantages of PC board con-
Application Hints (Continued)
struction, but the advantages are sometimes well worth the effort of using point-to-point up-in-the-air wiring. See
9
.
(Input pins are lifted out of PC board and soldered directly to components. All other pins connected to PC board.)
Figure
DS011227-13
FIGURE 9. Air Wiring
BIAS CURRENT TESTING
The test method of
Figure 10
is appropriate for bench-testing bias current with reasonable accuracy. To understand its op­eration, first close switch S2 momentarily. When S2 is opened, then
Typical Single-Supply Applications (V+
DS011227-14
FIGURE 10. Simple Input Bias Current Test Circuit
A suitable capacitor for C2 would be a 5 pF or 10 pF silver mica, NPO ceramic, or air-dielectric. When determining the magnitude of I
, the leakage of the capacitor and socket must be taken into account. Switch S2 should be left shorted most of the time, or else the dielectric absorption of the ca­pacitor C2 could cause errors.
Similarly, if S1 is shorted momentarily (while leaving S2 shorted)
where Cxis the stray capacitance at the + input.
=
5.0 VDC)
Photodiode Current-toVoltage Converter
Note: A 5V bias on the photodiode can cut its capacitance by a factor of 2
or 3, leading to improved response and lower noise. However, this bias on the photodiode will cause photodiode leakage (also known as its dark current).
DS011227-15
Micropower Current Source
(Upper limit of output range dictated by input common-mode range; lower limit dictated by minimum current requirement of LM385.)
DS011227-16
www.national.com9
Typical Single-Supply Applications (V+
Low-Leakage Sample-and-Hold
Sine-Wave Oscillator
=
5.0 VDC) (Continued)
DS011227-17
Oscillator frequency is determined by R1, R2, C1, and C2:
=
1/2πRC
f
OSC
where R=R1=R2 and C=C1=C2.
This circuit, as shown, oscillates at 2.0 kHz with a peak-to-peak output swing of 4.5V
1 Hz Square-Wave Oscillator
DS011227-19
www.national.com 10
DS011227-18
Power Amplifier
DS011227-20
Typical Single-Supply Applications (V+
=
5.0 VDC) (Continued)
=
f
10 Hz
O
Q=2.1 Gain=18.9 dB
10 Hz Bandpass Filter
10 Hz High-Pass Filter (2 dB Dip)
=
f
10 Hz
DS011227-21
c
d=0.895 Gain=1
1 Hz Low-Pass Filter
(Maximally Flat, Dual Supply Only)
DS011227-22
DS011227-23
www.national.com11
Physical Dimensions inches (millimeters) unless otherwise noted
8-Pin Small Outline Molded Package (M)
Order Number LPC661AIM or LPC661IM
NS Package Number M08A
8-Pin Molded Dual-In-Line Package (N)
Order Number LPC661AIN, LPC661IN or LPC661AMN
www.national.com 12
NS Package Number N08E
Notes
LPC661 Low Power CMOS Operational Amplifier
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
labeling, can be reasonably expected to result in a significant injury to the user.
National Semiconductor Corporation
Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com
www.national.com
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
National Semiconductor Europe
Fax: +49 (0) 1 80-530 85 86
Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80
National Semiconductor Asia Pacific Customer Response Group
Tel: 65-2544466 Fax: 65-2504466 Email: sea.support@nsc.com
National Semiconductor Japan Ltd.
Tel: 81-3-5639-7560 Fax: 81-3-5639-7507
Loading...