National Semiconductor LP2902 Technical data

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LP2902/LP324
Micropower Quad Operational Amplifier

LP2902/LP324 Micropower Quad Operational Amplifier

September 1999

General Description

The LP324 series consists of four independent, high gain in­ternally compensated micropower operational amplifiers.
These amplifiers are specially suited for operation in battery
systems while maintaining goodinputspecifications,and ex­tremely low supply current drain. In addition, the LP324 has
an input common mode range, and output source range
which includes ground, making it ideal in single supply appli­cations.

These amplifiers are ideal in applications which include por­table instrumentation, battery backup equipment, and other
circuits which require good DC performance and low supply
current.

Features

n Low supply current: 125 µA (max)
n Low offset voltage: 2 mV (max)
n Low input bias current: 4 nA (max)
n Input common mode to GND
n Interfaces to CMOS logic
n Wide supply range: 3V
n Small Outline Package available
n Pin-for-pin compatible with LM324

+

<

V

Connection Diagram Simplified Schematic

Dual-In-Line (N) and SO (M)

DS008562-1

Order Number LP324M or LP2902M

See NS Package Number M14A

Order Number LP324N or LP2902N

See NS Package Number N14A

<

32V

DS008562-2

© 1999 National Semiconductor Corporation DS008562 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage 32V or

LP2902 26V or

Differential Input Voltage 32V

LP2902 26V

Input Voltage (Note 2) −0.3V to 32V

LP2902 −0.3V to 26V

Output Short-Circuit to GND Continuous

(One Amplifier) (Note 3)

+

≤ 15V and T

V

ESD Susceptibility (Note 10)

=

25˚C

A

±
±

±

16V
13V

500V

Operating Conditions

Package

Power Dissipation 500 mW 500 mW

(Note 4)

Max 150˚C 150˚C

T

j

θ

ja

Operating Temp. Range (Note 5) (Note 5)
Storage Temp. Range −65˚C ≤ T ≤ 150˚C
Soldering

Information (10 sec.) 300˚C 260˚C
Vapor Phase (60 sec.) 215˚C
Infrared (15 sec.) 220˚C

NM

90˚C/W 140˚C/W

Electrical Characteristics (Note 6)

Symbol Parameter Conditions Tested Design Tested Design Units

V

os

I

b

I

os

A

vol

CMRR Common V

PSRR Power V

I

s

V

o

I

out

Source Source V

I

out

Sink Sink V

I

out

Sink Sink V

I

source

I

sink

V

os

Input Offset 2 4 10 24 9mV
Voltage (Max)
Input Bias 2 20 40 210 20 nA
Current (Max)
Input Offset 0.5 4 8 0.2 2 4 nA
Current (Max)
Voltage R
Gain to GND (Min)

Mode Rej. 0V ≤ V
Ratio V

Supply Rej. (Min)
Ratio
Supply R
Current (Max)
Output I
Voltage to GND. (Min)
Swing V

Output V

Current
Output V

Current
Output V

Current
Output Vin(diff)=1V 20 25 35 20 25 35 mA
Short to GND 35 35 (Max)
Output Vin(diff)=1V 15 30 45 15 30 45 mA

+

Short to V

=

10k 70 40 30 100 50 40 V/mV

L

+

=

30V

V

+

=

30V 90 80 75 90 80 75 dB

cm

<

V+− 1.5

cm
+

=

5V to 30V 90 80 75 90 80 75 dB

=

∞

L

=

350 µA 3.6 3.4 V

L

=

0V

cm

=

350 µA 0.7 0.8 1.0 0.7 0.8 1.0 V

I

L

+

to V

=

0V

V

cm

=

3V 10 7 4 10 7 4 mA

o

(diff)=1V (Min)

in

=

1.5V 5 4 3 54 3mA

o

(diff)=1V (Min)

in

=

1.5V 4 2 1 42 1mA

o

=

0V (Min)

cm

LP2902 (Note 9) LP324

Typ Limit Limit Typ Limit Limit Limits

(Note 7) (Note 8) (Note 7) (Note 8)

(Min)

85 150 250 85 150 250 µA

+

−1.9V 3.6 3.4 V+−1.9V V

(Max)

10 10 µV/C˚

(Max)

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Electrical Characteristics (Note 6) (Continued)

Symbol Parameter Conditions Tested Design Tested Design Units

Drift
I

os

Drift
GBW Gain

Bandwidth 100 100 KHz
Product

S

r

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.

Note 2: The input voltage is not allowed to go more than −0.3V below V
device.

Note 3: Short circuits from the output to GND can cause excessive heating and eventual destruction. The maximum sourcing output current is approximately 30 mA
independent of the magnitude of V
ticularly at elevated temperatures) and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.

Note 4: For operation at elevated temperatures, these devices must be derated based on a thermal resistance of θ
Note 5: The LP2902 may be operated from −40˚C ≤ T
Note 6: Boldface numbers apply at temperature extremes. All other numbers apply only at T

unless otherwise specified.

Note 7: Guaranteed and 100%production tested.
Note 8: Guaranteed (but not 100%production tested) over the operating supply voltage range (3.0V to 32V for the LP324, LP324, and 3.0V to 26V for the LP2902),

and the common mode range (0V to V

Note 9: The LP2902 operating supply range is 3V to 26V, and is not tested above 26V.
Note 10: The test circuit used consists of the human body model of 100 pF in series with 1500Ω.

Slew Rate 50 50 V/mS

+

. At values of supply voltage in excess of 15 VDC, continuous short-circuit to GND can exceed the power dissipation ratings (par-

≤ +85˚C, and the LP324 may be operated from 0˚C ≤ TA≤ +70˚C.

A

+

−1.5V), unless otherwise specified. These limits are not used to calculate outgoing quality levels.

LP2902 (Note 9) LP324

Typ Limit Limit Typ Limit Limit Limits

(Note 7) (Note 8) (Note 7) (Note 8)

10 10 pA/C˚

−

(GND) as this will turn on a parasitic transistor causing large currents to flow through the

=

V/2, and R

=

+ θjaPD.

T

j

A

=

100k connected to GND

L

and Tjmax. T

ja

=

A

+

=

25˚C, V

=

5V,V

cm

T

j

Typical Performance Curves

Input Voltage Range

Voltage Gain

DS008562-21

DS008562-24

Input Current

Open Loop

Frequency Response

DS008562-22

DS008562-25

Supply Current

DS008562-23

Power Supply

Rejection Ratio

DS008562-26

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