National Semiconductor LMX2335L, LMX2336L Technical data

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LMX2335L/LMX2336L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal

Communications

LMX2335L/LMX2336L
PLLatinum

™

Low Power Dual Frequency Synthesizer for

RF Personal Communications

LMX2335L 1.1 GHz/1.1 GHz
LMX2336L 2.0 GHz/1.1 GHz

General Description

The LMX2335L and LMX2336L are monolithic, integrated
dual frequency synthesizers, including two high frequency
prescalers, and are designed for applications requiring two
RF phase-lock loops. They are fabricated using National’s

0.5µ ABiC V silicon BiCMOS process.
The LMX2335L/36Lcontains twodual modulusprescalers. A

64/65 or a 128/129 prescaler can be selected for each RF
synthesizer. A second reference divider chain is included in
the IC for improved system noise. The LMX2335L/36L com­bined with a high quality reference oscillator, two loop filters,
and two external voltage controlled oscillators generates
very stable low noise RF local oscillator signals.

Serial data is transferred into the LMX2335L/36L via a three
wire interface (Data, Enable, Clock). Supply voltage can
range from 2.7V to 5.5V. The LMX2335L/36L feature very
low current consumption; LMX2335L 4.0 mA at 5V,
LMX2336L 5.5 mA at 5V. The LMX2335L is available in SO,
TSSOP and CSP 16-pin surface mount plastic packages.
The LMX2336L is available in a TSSOP 20-pin and CSP
24-pin surface mount plastic package.

PRELIMINARY

June 1999

Features

n Ultra low current consumption
n 2.7V to 5.5V operation
n Selectable synchronous and asynchronous powerdown

mode:

=

I

1 µA (typ)

CC

n Dual modulus prescaler: 64/65 or 128/129
n Selectable charge pump TRI-STATE
n Selectable charge pump current levels
n Selectable Fastlock
n Upgrade and compatible to LMX2335/36
n Small-outline, plastic, surface mount TSSOP package
n LMX2336 available in CSP package

™

mode

®

mode

Applications

n Cellular telephone systems (AMPS, ETACS, RCR-27)
n Cordless telephone systems

(DECT, ISM , PHS, CT-1+)

n Personal Communication Systems

(DCS-1800, PCN-1900)

n Dual Mode PCS phones
n Cable TV Tuners (CATV)
n Other wireless communication systems

Functional Block Diagram

DS012807-1

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

™

Fastlock

, MICROWIRE™and PLLatinum™are trademarks of National Semiconductor Corporation.

© 1999 National Semiconductor Corporation DS012807 www.national.com

Connection Diagrams

LMX2335L
(Top View)

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Order Number LMX2335LM or LM2335LTM

NS Package Number M16A and MTC16

LMX2335L
(Top View)

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Order Number LMX2335LSLB
NS Package Number SLB16A

LMX2336L
(Top View)

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Order Number LMX2336LTM
NS Package Number MTC20

LMX2336L
(Top View)

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Order Number LMX2336LSLB
NS Package Number SLB24A

Pin Descriptions

Pin No. Pin No. Pin No. Pin No. Pin I/O Description

2336LTM 2336LSLB 2335LTM 2335LSLB Name

1 24 1 16 V

2221V
3332D

4443GNDLMX2335L: Ground for RF1 analog and RF1 digital circuits.

5554f
66XX/f

7 7 X X GND Ground for RF1 analog circuitry.

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1 Power supply voltage input for RF1 analog and RF1 digital

CC

1 Power supply for RF1 charge pump. Must be ≥ VCC.

p

1 O RF1 charge pump output. For connection to a loop filter for

o

circuits. Input may range from 2.7V to 5.5V. V

2. Bypass capacitors should be placed as close as possible

V

CC

to this pin and be connected directly to the ground plane.

CC

driving the input of an external VCO.

LMX2336L: Ground for RF digital circuits.

1 I RF1 prescaler input. Small signal input from the VCO.

IN

1 I RF1 prescaler complementary input. A bypass capacitor should

IN

be placed as close as possible to this pin and be connected
directly to the ground plane. Capacitor is optional with loss of
some sensitivity.

1 must equal

Pin Descriptions (Continued)

Pin No. Pin No. Pin No. Pin No. Pin I/O Description

2336LTM 2336LSLB 2335LTM 2335LSLB Name

8865OSC

9 10 7 6 OSC

10 11 8 7 F

o

11 12 9 8 Clock I High impedance CMOS Clock input. Data for the various latches

12 14 10 9 Data I Binary serial data input. Data entered MSB first. The last two bits

13 15 11 10 LE I Load enable high impedance CMOS input. When LE goes HIGH,

14 16 X X GND Ground for RF2 analog circuitry.
15 17 X X /f

16 18 12 11 f

IN

IN

17 19 13 12 GND LMX2335L: Ground for RF2 analog, RF2 digital, MICROWIRE,

18 20 14 13 D

19 22 15 14 V
20 23 16 15 V

X 1,9,13,

X X NC No connect.

p
CC

21

I Oscillator input. The input has a VCC/2 input threshold and can

in

out

be driven from an external CMOS or TTL logic gate.

O Oscillator output.

LD O Multiplexed output of the programmable or reference dividers,

lock detect signals and Fastlock mode. CMOS output

(see

Programmable Modes).

is clocked in on the rising edge, into the 20-bit shift register.

are the control bits. High impedance CMOS input.

data stored in the shift registers is loaded into one of the 4
appropriate latches (control bit dependent).

2 I RF2 prescaler complementary input. A bypass capacitor should

be placed as close as possible to this pin and be connected
directly to the ground plane. Capacitor is optional with loss of
some sensitivity.

2 I RF2 prescaler input. Small signal input from the VCO.

F

LD and Oscillator circuits. LMX2336L: Ground for IF digital,

o

MICROWIRE, F

2 O RF2 charge pump output. For connection to a loop filter for

o

driving the input of an external VCO.

LD and oscillator circuits.

o

2 Power supply for RF2 charge pump. Must be ≥ VCC.

2 Power supply voltage input for RF2 analog, RF2 digital,

MICROWIRE, F

2.7V to 5.5V. V
be placed as close as possible to this pin and be connected

LD and oscillator circuits. Input may range from

o

2 must equal VCC1. Bypass capacitors should

CC

directly to the ground plane.

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Block Diagram

Note 1: VCC1 supplies power to the RF1 prescaler, N-counter, R-counter, and phase detector. VCC2 supplies power to the RF2 prescaler, N-counter, phase

detector, R-counter along with the OSCinbuffer, MICROWIRE, and FoLD. VCC1 and VCC2 are clamped to each other by diodes and must be run at the same
voltage level.

1 and VP2 can be run separately as long as VP≥ VCC.

Note 2: V

P

LMX2335L Pin

→

#

8/10←LMX2336L Pin

#

Pin Name→FoLD

X signifies a function not bonded out to a pin

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DS012807-4

Absolute Maximum Ratings (Notes 1, 2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Power Supply Voltage

V

CC

V

P

Voltage on Any Pin

with GND=0V (V

Storage Temperature Range (T

) −0.3V to VCC+0.3V

I

) −65˚C to +150˚C

S

Lead Temperature (solder 4 sec.) (T

−0.3V to +6.5V

−0.3V to +6.5V

) +260˚C

L

Recommended Operating
Conditions

Power Supply Voltage

V

CC

V

P

Operating Temperature (T

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi­tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi­tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.

Note 2: This device is a high performance RF integrated circuit with an ESD

<

2 keV and is ESD sensitive. Handling and assembly of this device

rating
should only be done at ESD protected work stations.

) −40˚C to +85˚C

A

2.7V to 5.5V

VCCto +5.5V

Electrical Characteristics

=

V

5.0V, V

CC

Symbol Parameter Conditions Value Units

I

CC

I

CC

I

CC

f

1 Operating

IN

f

2 0.050 1.1 GHz

IN

f

1 LMX2336L 0.200 2.0 GHz

IN

f

2 0.050 1.1 GHz

IN

I

CC-PWDN

f

OSC

f

OSC

f

φ

Pf

IN

Pf

IN

V

OSC

V

IH

V

IL

I

IH

I

IL

I

IH

I

IL

I

Do-SOURCE

I

Do-SINK

I

Do-SOURCE

I

Do-SINK

I

Do-TRI

V

OH

V

OL

=

P

5.0V; T

=

25˚C, except as specified

A

Min Typ Max

Power Supply LMX2335L V

=

2.7V to 5.5V 4.0 5.2 mA

CC

Current RF1 and RF2

LMX2335L RF1 only 2.0 2.6 mA
LMX2336L 5.5 7 mA
RF1 and RF2
LMX2336L RF1 only 3.3 4.3 mA
LMX2335L 0.100 1.1 GHz

Frequency

Powerdown Current LMX2335L/2336L V
Oscillator Frequency With resonator load on OSC

=

5.5V 1 10 µA

CC

No load on OSC

out

out

5 20 MHz

5 40 MHz
Maximum Phase Detector Frequency 10 MHz
RF Input Sensitivity V

Oscillator Sensitivity OSC

=

CC

=

V

CC

in

High-Level Input Voltage (Note 4) 0.8 V
Low-Level Input Voltage (Note 4) 0.2 V
High-Level Input Current V
Low-Level Input Current V
Oscillator Input Current V
Oscillator Input Current V
Charge Pump Output Current V

=

IH

=

IL

=

IH

=

IL

=

Do

(Note 3)

=

V

Do

(Note 3)

=

V

Do

(Note 3)

=

V

Do

(Note 3)

>

3.0V, f

5.0V, f

100 MHz −15 0 dBm

>

100 MHz −10 0

0.5 V

CC

=

V

5.5V (Note 4) −1.0 1.0 µA

CC

=

0V, V

V

0V, V

V

V

V

V

5.5V (Note 4) −1.0 1.0 µA

CC

=

5.5V 100 µA

CC

=

5.5V −100 µA

CC

=

/2, I

P

/2, I

P

/2, I

P

/2, I

P

CPo

CPo

CPo

CPo

=

=

=

LOW

LOW

HIGH

HIGH

−1.25 mA

1.25 mA

−4.25 mA

4.25 mA

CC

Charge Pump 0.5V ≤ VDo≤ VCC− 0.5V −5.0 5.0 nA
TRI-STATE Current T=25˚C
High-Level Output Voltage I

Low-Level Output Voltage I

=

−500 µA V

OH

=

500 µA 0.4 V

OL

CC

0.4

−

PP

V
V

V

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Electrical Characteristics (Continued)

=

V

CC

Symbol Parameter Conditions Value Units

t

CS

t

CH

t

CWH

t

CWL

t

ES

t

EW

Note 3: See PROGRAMMABLE MODES for I
Note 4: Clock, Data and LE does not include f

5.0V, V

=

P

5.0V; T

=

25˚C, except as specified

A

Min Typ Max

Data to Clock Set Up Time See Data Input Timing 50 ns
Data to Clock Hold Time See Data Input Timing 10 ns
Clock Pulse Width High See Data Input Timing 50 ns
Clock Pulse Width Low See Data Input Timing 50 ns
Clock to Load Enable Set Up Time See Data Input Timing 50 ns
Load Enable Pulse Width See Data Input Timing 50 ns

description.

CPo

1, fIN2 and OSCin.

IN

Charge Pump Current Specification Definitions

I1=CP sink current at V
I2=CP sink current at V
I3=CP sink current at V
I4=CP source current at V
I5=CP source current at V
I6=CP source current at V
V=Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V

1. I

2. I

3. I

=

vs V

Do

Do

1

*

[

⁄

2

{|I1| − |I3|}]/[1⁄

vs I

Do-sink

Do-source

1

[|I2| − |I5|]/[

⁄

2

=

vs T

Do

A

@

[|I2

temp| − |I2@25˚C|]/|I2@25˚C|*100%and [|I5@temp| − |I5@25˚C|]/|I5@25˚C|*100

=

− ∆V

V

Do

P

=

/2

V

Do

P

=

∆V

Do

=

− ∆V

V

Do

P

=

/2

V

Do

P

=

∆V

Do

Charge Pump Output Current magnitude variation vs Voltage

*

2

{|I1| + |I3|}]*100%and [1⁄

=

Charge Pump Output Current Sink vs Source Mismatch

*

{|I2| + |I5|}]*100

Charge Pump Output Current magnitude variation vs Temperature

%

*

2

{|I4| − |I6|}]/[1⁄

*

2

{|I4| + |I6|}]*100

=

=

=

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DS012807-18

and ground. Typical values are between 0.5V and 1.0V.

CC

%

%

RF Sensitivity Test Block Diagram

Note 5: N=10,000R=50P=64
Note 6: Sensitivity limit is reached when the error of the divided RF output, F

Typical Performance Characteristics

ICCvs V

CC

LMX2335L

DS012807-20

Charge Pump Current vs DoVoltage

=

I

HIGH

cp

LD, is ≥ 1 Hz.

o

ICCvs V

CC

LMX2336L

Charge Pump Current vs DoVoltage

=

I

LOW

cp

DS012807-19

DS012807-21

DS012807-22

DS012807-23

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