National Semiconductor LMX2335, LMX2336, LMX2337 Technical data
查询LMX2335供应商
LMX2335/LMX2336/LMX2337
PLLatinum
Personal Communications
LMX2335 1.1 GHz/1.1 GHz
LMX2336 2.0 GHz/1.1 GHz
LMX2337 550 MHz/550 MHz
General Description
The LMX2335, LMX2336 and LMX2337 are monolithic, integrated dual frequency synthesizers, including two high frequency prescalers, and are designed for applications requiring two RF phase-lock loops. They are fabricated using
National’s ABiC IV silicon BiCMOS process.
The LMX2335/36/37 contains two dual modulus prescalers.
A 64/65 or a 128/129 prescaler can be selected for each RF
synthesizer. A second reference divider chain is included in
the IC for improved system noise. LMX2335/36/37, which
employ a digitalphaselocked loop technique, combined with
a high quality reference oscillator and loop filters, provide the
tuning voltages for voltage controlled oscillators to generate
very stable low noise RF local oscillator signals.
Serial data is transferred into the LMX2335/36/37 via a three
wire interface (Data, Enable, Clock). Supply voltage can
range from 2.7V to 5.5V. The LMX2335/36/37 feature very
low current consumption; LMX2335/37 −10 mA at 3V,
LMX2336 −13 mA at 3V. The LMX2335/37 are available in
™
Dual Frequency Synthesizer for RF
both a JEDEC SO and TSSOP 16-pin surface mount plastic
package. The LMX2336 is available in a TSSOP 20-pin surface mount plastic package.
Features
n 2.7V to 5.5V operation
n Low current consumption
n Selectable powerdown mode:
=
I
1 µA (typ)
CC
n Dual modulus prescaler: 64/65 or 128/129
n Selectable charge pump TRI-STATE
n Selectable charge pump current levels
n Selectable FastLock
™
mode
Applications
n Cellular telephone systems (AMPS, ETACS, RCR-27)
n Cordless telephone systems (DECT, ISM, PHS, CT-1+)
n Personal Communication Systems
(DCS-1800, PCN-1900)
n Dual Mode PCS phones
n CATV
n Other wireless communication systems
September 1996
®
mode
LMX2335/LMX2336/LMX2337 PLLatinum Dual Frequency Synthesizer for RF Personal
Communications
Functional Block Diagram
DS012332-1
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
™
Fastlock
, MICROWIRE™and PLLatinum™are trademarks of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS012332 www.national.com
Connection Diagrams
LMX2335/LMX2337
DS012332-2
Order Number LMX2335M/LMX2335TM or
LMX2337M/LMX2337TM
NS Package Number M16A and MTC16
Order Number LMX2336TM
LMX2336
DS012332-16
NS Package Number MTC20
Pin Descriptions
Pin No.
2335/37
10 12 Data I Binary serial data input. Data entered MSB first. The last two bits are the control bits.
11 13 LE I Load enable high impedance CMOS input. When LE goes HIGH, data stored in the
12 16 f
13 17 GND LMX2335/37: Ground for RF2 analog, RF2 digital, MICROWIRE
14 18 D
15 19 V
Pin No.
2336
11V
22V
33D
Pin
I/O Description
Name
1 Power supply voltage input for RF1 analog and RF1 digital circuits. Input may range
CC
from 2.7V to 5.5V. V
close as possible to this pin and be connected directly to the ground plane.
1 Power supply for RF1 charge pump. Must be ≥ VCC.
p
1 O RF1 charge pump output. For connection to a loop filter for driving the input of an
o
external VCO.
1 must equal VCC2. Bypass capacitors should be placed as
CC
4 4 GND LMX2335/37: Ground for RF1 analog and RF1 digital circuits. LMX2336: Ground for RF
digital circuitry.
55f
X6f
1 I First RF prescaler input. Small signal input from the VCO.
IN
1 I RF1 prescaler complementary input. A bypass capacitor should be placed as close as
IN
possible to this pin and be connected directly to the ground plane. Capacitor is optional
with loss of some sensitivity.
X 7 GND Ground for RF1 analog circuitry.
6 8 OSC
7 9 OSC
810F
I Oscillator input. The input has a VCC/2 input threshold and can be driven from an
in
out
LD O Multiplexed output of the programmable or reference dividers, lock detect signals and
o
external CMOS or TTL logic gate.
O Oscillator output.
Fastlock mode. CMOS output
(see Programmable Modes)
.
9 11 Clock I High impedance CMOS Clock input. Data for the various latches is clocked in on the
rising edge, into the 20-bit shift register.
High impedance CMOS input.
shift registers is loaded into one of the 4 appropriate latches (control bit dependent).
X 14 GND Ground for RF2 analog circuitry.
X15f
2 I RF2 prescaler complementary input. A bypass capacitor should be placed as close as
IN
possible to this pin and be connected directly to the ground plane. Capacitor is optional
with loss of some sensitivity.
2 I RF2 prescaler input. Small signal input from the VCO.
IN
circuits. LMX2336: Ground for RF2 digital, MICROWIRE, F
2 O RF2 charge pump output. For connection to a loop filter for driving the input of an
o
2 Power supply for RF2 charge pump. Must be ≥ VCC.
p
external VCO.
™
,FoLD and Oscillator
LD and Oscillator circuits.
o
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Pin Descriptions (Continued)
Pin No.
2335/37
Pin No.
2336
16 20 V
Block Diagram
Pin
I/O Description
Name
2 Power supply voltage input for RF2 analog. RF2 digital, MICROWIRE, FoLD and
CC
Oscillator circuits. Input may range from 2.7V to 5.5V. V
capacitors should be placed as close as possible to this pin and be connected directly
2 must equal VCC1. Bypass
CC
to the ground plane.
Note: VCC1 supplies power to the RF1 prescaler, N-counter, R-counter, and phase detector. VCC2 supplies power to the RF2 prescaler, N-counter, phase
detector, R-counter along with the OSCinbuffer, MICROWIRE, and FoLD. VCC1 and VCC2 are clamped to each other by diodes and must be run at the same
voltage level.
1 and VP2 can be run separately as long as VP≥ VCC.
V
P
LMX2335/37 Pin
→
#
8/10←LMX2336 Pin
#
DS012332-17
Pin Name→FoLD
X signifies a function not available
www.national.com3
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
V
P
Voltage on Any Pin
with GND=0V (V
) −0.3V to VCC+0.3V
I
Storage Temperature Range (T
) −65˚C to +150˚C
S
−0.3V to +6.5V
−0.3V to +6.5V
Lead Temperature (solder 4 sec.) (T
) +260˚C
L
Recommended Operating
Conditions
Power Supply Voltage
V
CC
V
P
Operating Temperature (T
) −40˚C to +85˚C
A
2.7V to 5.5V
VCCto +5.5V
Electrical Characteristics
=
V
CC
Symbol Parameter Conditions
I
CC
I
CC
I
CC
f
1 Operating
IN
f
2 0.050 1.1 GHz
IN
f
1 LMX2336 0.200 2.0 GHz
IN
f
2 0.050 1.1 GHz
IN
f
1 LMX2337 100 550 MHz
IN
f
2 50 550 MHz
IN
I
CC-PWDN
f
OSC
f
OSC
f
φ
Pf
1
IN
and Pf
in
V
OSC
V
IH
V
IL
I
IH
I
IL
I
IH
I
IL
I
Do-SOURCE
I
Do-SINK
I
Do-SOURCE
I
Do-SINK
5.0V, V
=
p
5.0V; T
=
25˚C, except as specified
A
Value
Min Typ Max
Power Supply
Current
LMX2335/37
RF1 and RF2
LMX2335/37 RF1
only
LMX2336
RF1 and RF2
VCC= 2.7V to 5.5V
10 15 mA
68mA
13 18 mA
LMX2336 RF1 only 7 11 mA
LMX2335 0.100 1.1 GHz
Frequency
Powerdown Current LMX2335/2336 VCC= 5.5V 1 25
LMX2337 100
Oscillator Frequency With resonator load on OSC
No load on OSC
OUT
out
5 20 MHz
5 40 MHz
Phase Detector Frequency 10 MHz
RF Input Sensitivity V
2
Oscillator Sensitivity OSC
= 3.0V, f>100 MHz −15 +4
CC
= 5.0V, f>100 MHz −10 +4
V
CC
V
= 2.7 to 5.5V,
CC
>
f
100 MHz
IN
−10 0
0.5 V
High-Level Input Voltage (Note 4) 0.8
V
CC
Low-Level Input Voltage (Note 4) 0.2
High-Level Input Current VIH=VCC= 5.5V (Note 4) −1.0 1.0 µA
Low-Level Input Current VIL= 0V, VCC= 5.5V (Note 4) −1.0 1.0 µA
Oscillator Input Current VIH=VCC= 5.5V 100 µA
Oscillator Input Current VIL= 0V, VCC= 5.5V −100 µA
Charge Pump Output Current V
=Vp/2, I
D
o
(Note 3)
V
=Vp/2, I
D
o
(Note 3)
V
=Vp/2, I
D
o
(Note 3)
V
=Vp/2, I
D
o
(Note 3)
CP
CP
CP
CP
= LOW
o
= LOW
o
= HIGH
o
= HIGH
o
−1.25 mA
1.25 mA
−5.0 mA
5.0 mA
V
CC
Units
µA
dBm
PP
V
V
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Electrical Characteristics (Continued)
=
V
CC
Symbol Parameter Conditions
I
Do-TRI
I
Do-TRI
V
OH
V
OL
t
CS
I
CH
t
CWH
t
CWL
t
ES
t
EW
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which
the device is intended to be functional, but do not guarantee specific performanced limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD rating
be done at ESD protected workstations.
Note 3: See PROGRAMMABLE MODES for I
Note 4: Clock, Data and LE does not include f
5.0V, V
=
p
5.0V; T
=
25˚C, except as specified
A
Value
Min Typ Max
Charge Pump
TRI-STATE
LMX2335
LMX2336
0.5V ≤ V
T = 25˚C −5.0 5.0 nA
≤ Vp− 0.5V
D
o
CURRENT
Charge Pump
TRI-STATE
LMX2337 0.5V ≤ V
T = 25˚C
≤ Vp− 0.5V
D
o
±
5nA
CURRENT
High-Level Output Voltage IOH= −500 µA VCC−
0.4
Low-Level Output Voltage IOL= 500 µA 0.4 V
Data to Clock Setup Time See Data Input Timing 50 ns
Data to Clock Hold Time See Data Input Timing 10 ns
Clock Pulse Width High See Data Input Timing 50 ns
Clock Pulse Width Low See Data Input Timing 50 ns
Clock to Load Enable Set Up Time See Data Input Timing 50 ns
Load Enable Pulse Width See Data Input Timing 50 ns
<
2 keV and is ESD sensitive. Handling and assembly of this device should only
description.
CP
o
1, fIN2 and OSCin.
IN
Typical Performance Characteristics
Units
V
ICC vs V
CC
LMX2335/37
DS012332-19
ICCvs V
LMX2336
CC
DS012332-20
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Typical Performance Characteristics (Continued)
Charge Pump Current vs D
=
I
HIGH
CP
LMX2335/37 Input Impedance (for SO package)
=
V
2.7V to 5.5V, f
CC
Voltage
o
=
50 MHz to 1.5 GHz
IN
DS012332-21
Charge Pump Current vs DoVoltage
=
I
LOW
CP
DS012332-22
LMX2335/37 Input Impedance (for TSSOP package)
LMX2336 Input Impedance V
=
f
50 MHz to 2.5 GHz
IN
=
CC
2.7V to 5.5V,
Marker 1=1 GHz, Real=94, Imaginary=−118
Marker 2=1.2 GHz, Real=72, Imaginary=−88
Marker 3=1.5 GHz, Real=53, Imaginary=−45
Marker 4=500 MHz, Real=201, Imaginary=−224
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DS012332-23
Marker 1=1 GHz, Real=97, Imaginary=−146
Marker 2=1.89 GHz, Real=43, Imaginary=−67
Marker 3=2.5 GHz, Real=30, Imaginary=−33
Marker 4=500 MHz, Real=189, Imaginary=−233
DS012332-24
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