Datasheet LMX2330L, LMX2331L, LMX2332L Datasheet (National Semiconductor)

查询LMX2330L供应商
LMX2330L/LMX2331L/LMX2332L PLLatinum RF Personal Communications
LMX2330L 2.5 GHz/510 MHz LMX2331L 2.0 GHz/510 MHz LMX2332L 1.2 GHz/510 MHz
General Description
The LMX233XL family of monolithic, integrated dual fre­quency synthesizers,including prescalers, is to be used as a local oscillator for RF and first IF of a dual conversion trans­ceiver. It is fabricated using National’s 0.5µ ABiC V silicon BiCMOS process.
The LMX233XL contains dual modulus prescalers. A 64/65 or a 128/129 prescaler (32/33 or 64/65 in the 2.5 GHz LMX2330L) can be selected forthe RFsynthesizer anda 8/9 or a 16/17 prescaler can be selected for the IF synthesizer. LMX233XL, which employs a digitalphase locked loop tech­nique, combined with a high quality reference oscillator,pro­vides the tuning voltages for voltage controlled oscillators to generate very stable, low noise signals for RF and IF local oscillators. Serial data is transferred into the LMX233XL via a three wire interface (Data, Enable, Clock). Supply voltage can rangefrom 2.7V to 5.5V.The LMX233XLfamily features very low current consumption;
LMX2330L—5.0 mA at 3V, LMX2331L — 4.0 mA at 3V, LMX2332L—3.0 mA at 3V.
The LMX233XL are available in a TSSOP 20-pin and CSP 24-pin surface mount plastic package.
Low Power Dual Frequency Synthesizer for
Features
n Ultra low current consumption n 2.7V to 5.5V operation n Selectable synchronous or asynchronous powerdown
mode:
=
I
1 µA typical at 3V
CC
n Dual modulus prescaler:
LMX2330L (RF) 32/33 or 64/65 LMX2331L/32L (RF) 64/65 or 128/129 LMX2330L/31L/32L (IF) 8/9 or 16/17
n Selectable charge pump TRI-STATE n Selectable charge pump current levels n Selectable Fastlock n Upgrade and compatible to LMX233XA family
mode
®
mode
Applications
n Portable Wireless Communications
(PCS/PCN, cordless)
n Cordless and cellular telephone systems n Wireless Local Area Networks (WLANs) n Cable TV tuners (CATV) n Other wireless communication systems
June 1999
LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RF
Personal Communications
Functional Block Diagram
DS012806-1
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
Fastlock
, MICROWIRE™and PLLatinum™are trademarks of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS012806 www.national.com
Connection Diagrams
Chip Scale Package (SLB)
(Top View)
DS012806-39
Order Number LMX2330LSLB, LMX2331LSLB or
LMX2332LSLB
NS Package Number SLB24A
Pin Descriptions
Thin Shrink Small Outline Package (TM)
(Top View)
DS012806-2
Order Number LMX2330LTM, LMX2331LTM or
LMX2332LTM
NS Package Number MTC20
Pin No.
LMX233XLSLB
24-pinCSP
Package
24 1 V
Pin No. LMX233XLTM 20-pin TSSOP
Package
Pin
Name
CC
I/O Description
1 Power supply voltage input for RF analog and RF digital circuits. Input
may range from 2.7V to 5.5V. V capacitors should be placed as close as possible to this pin and be
1 must equal VCC2. Bypass
CC
connected directly to the ground plane. 22V 33D
1 Power Supply for RF charge pump. Must be VCC.
P
RF O Internal charge pump output. For connection to a loop filter for driving
o
the input of an external VCO. 4 4 GND Ground for RF digital circuitry. 55f 66f
RF I RF prescaler input. Small signal input from the VCO.
IN
RF I RF prescaler complementary input. A bypass capacitor should be
IN
placed as close as possible to this pin and be connected directly to the
ground plane. Capacitor is optional with some loss of sensitivity. 7 7 GND Ground for RF analog circuitry. 8 8 OSC
10 9 GND Ground for IF digital, MICROWIRE 11 10 F
LD O Multiplexed output of the RF/IF programmable or reference dividers,
o
I Oscillator input. The input has a VCC/2 input threshold and can be
in
driven from an external CMOS or TTL logic gate.
,FoLD, and oscillator circuits.
RF/IF lock detect signals and Fastlock mode. CMOS output
Programmable Modes).
12 11 Clock I High impedance CMOS Clock input. Data for the various counters is
clocked in on the rising edge, into the 22-bit shift register.
14 12 Data I Binary serial data input. Data entered MSB first. The last two bits are
the control bits. High impedance CMOS input.
(see
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Pin Descriptions (Continued)
Pin No.
LMX233XLSLB
24-pinCSP
Package
Pin No. LMX233XLTM 20-pin TSSOP
Package
Pin
Name
I/O Description
15 13 LE I Load enable high impedance CMOS input. When LE goes HIGH, data
stored in the shift registers is loaded into one of the 4 appropriate
latches (control bit dependent). 16 14 GND Ground for IF analog circuitry. 17 15 f
IF I IF prescaler complementary input. A bypass capacitor should be placed
IN
as close as possible to this pin and be connected directly to the ground
plane. Capacitor is optional with some loss of sensitivity. 18 16 f 19 17 GND Ground for IF digital, MICROWIRE, F 20 18 D
22 19 V 23 20 V
IF I IF prescaler input. Small signal input from the VCO.
IN
IF O IF charge pump output. For connection to a loop filter for driving the
o
2 Power Supply for IF charge pump. Must be VCC.
P
2 Power supply voltage input for IF analog, IF digital, MICROWIRE,
CC
input of an external VCO.
LD, and oscillator circuits. Input may range from 2.7V to 5.5V. VCC2
F
o
must equal V
possible to this pin and be connected directly to the ground plane.
1. Bypass capacitors should be placed as close as
CC
LD, and oscillator circuits.
o
1, 9, 13, 21 X NC No connect.
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Block Diagram
Note: The RF prescaler for the LMX2331L/32L is either 64/65 or 128/129, while the prescaler for the LMX2330Lis 32/33 or 64/65.
1 supplies power to the RF prescaler, N-counter, R-counter and phase detector. VCC2 supplies power to the IF prescaler, N-counter, phase detector,
Note: V
CC
R-counter along with the OSC
1 and VP2 can be run separately as long as VP≥ VCC.
Note: V
P
buffer, MICROWIRE, and FoLD. VCC1 and VCC2 are clamped to each other by diodes and must be run at the same voltage level.
in
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DS012806-3
Absolute Maximum Ratings (Notes 1,
2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Power Supply Voltage
V
CC
V
P
Voltage on Any Pin
with GND=0V (V
Storage Temperature Range (T
) −0.3V to VCC+0.3V
I
) −65˚C to +150˚C
S
Lead Temperature (solder 4 sec.) (T
−0.3V to +6.5V
−0.3V to +6.5V
) +260˚C
L
Recommended Operating Conditions
Power Supply Voltage
V
CC
V
P
Operating Temperature (T
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate condi­tions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test condi­tions, see the Electrical Characteristics. The guaranteed specificationsapply only for the test conditions listed.
Note 2: This device is ahigh performance RF integrated circuit with anESD
<
2 keV and is ESD sensitive. Handling and assembly of this device
rating should only be done at ESD protected work stations.
) −40˚C to +85˚C
A
2.7V to 5.5V
VCCto +5.5V
Electrical Characteristics
=
V
CC
Symbol Parameter Conditions
I
CC
I
CC-PWDN
f
RF Operating LMX2330L 0.5 2.5
IN
f
IF Operating LMX233xL 45 510 MHz
IN
f
OSC
f
φ
Pf
RF RF Input Sensitivity V
IN
Pf
IF IF Input Sensitivity V
IN
V
OSC
V
IH
V
IL
I
IH
I
IL
I
IH
I
IL
V
OH
V
OL
t
CS
t
CH
t
CWH
t
CWL
3.0V, V
=
3.0V; −40˚C
P
<
<
T
85˚C, except as specified
A
Value
Min Typ Max
Power LMX2330L RF + IF V
=
2.7V to 5.5V 5.0 6.6
CC
Supply LMX2330L RF Only 4.0 5.2 Current LMX2331L RF + IF 4.0 5.4
LMX2331L RF Only 3.0 4.0 mA LMX2332L IF + RF 3.0 4.1 LMX2332L RF Only 2.0 2.7 LMX233xL IF Only 1.0 1.4
Powerdown Current (Note 3) 1 10 µA
Frequency LMX2331L 0.2 2.0 GHz
LMX2332L 0.1 1.2
Frequency Oscillator Frequency 5 40 MHz Maximum Phase Detector 10 MHz Frequency
=
3.0V −15 0 dBm
CC
=
V
5.0V −10 0 dBm
CC
=
2.7V to 5.5V −10 0 dBm Oscillator Sensitivity OSC High-Level Input Voltage (Note 4) 0.8 V Low-Level Input Voltage (Note 4) 0.2 V High-Level Input Current V
Low-Level Input Current V
Oscillator Input Current V Oscillator Input Current V High-Level Output Voltage
LD, pin number 10)
(for F
o
Low-Level Output Voltage (for
LD, pin number 10)
F
o
CC
in
=
=
V
IH
(Note 4)
IL
(Note 4)
IH IL
I
OH
I
OL
5.5V
CC
=
=
=
=
=
=
0V, V
V
0V, V
5.5V
CC
=
5.5V 100 µA
CC
=
5.5V −100 µA
CC
−500 µA V
500 µA 0.4 V
0.5 V
CC
−1.0 1.0 µA
−1.0 1.0 µA
− 0.4 V
CC
CC
Data to Clock Set Up Time See Data Input Timing 50 ns Data to Clock Hold Time See Data Input Timing 10 ns Clock Pulse Width High See Data Input Timing 50 ns Clock Pulse Width Low See Data Input Timing 50 ns
Units
PP
V V
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Electrical Characteristics (Continued)
=
V
CC
Symbol Parameter Conditions
t
ES
t
EW
Note 3: Clock, Data and LE=GND or Vcc. Note 4: Clock, Data and LE does not include f
3.0V, V
=
3.0V; −40˚C
P
<
<
T
85˚C, except as specified
A
Value
Min Typ Max
Clock to Load Enable Set Up Time See Data Input Timing 50 ns Load Enable Pulse Width See Data Input Timing 50 ns
RF, fINIF and OSCIN.
IN
Charge Pump Characteristics
=
V
3.0V, V
CC
Symbol Parameter Conditions
-SOURCE Charge Pump Output V
I
Do
I
-SINK Current V
Do
I
-SOURCE V
Do
I
-SINK V
Do
I
-TRI Charge Pump 0.5V VDo≤ VP− 0.5V −2.5 2.5
Do
I
-SINK vs CP Sink vs V
Do
I
SOURCE Source Mismatch (Note 7) T
Do-
I
vs V
Do
Do
I
vs T
Do
A
Note 5: See PROGRAMMABLE MODES for I
=
3.0V; −40˚C
P
<
TA≤ 85˚C, except as specified
Value
Min Typ Max
Do Do Do Do
TRI-STATE Current −40˚C
Do
=
A
= = = =
=
25˚C
V V V V
<
V
=
/2, I
P
/2, I
P
/2, I
P
/2, I
P
T /2 3 10
P
HIGH (Note 5) −4.0 mA
CPo
=
HIGH (Note 5) 4.0 mA
CPo
=
LOW (Note 5) −1 mA
CPo
=
LOW (Note 5) 1 mA
CPo
<
85˚C
A
CP Current vs Voltage 0.5 VDo≤ VP− 0.5V 10 15 (Note 6) T CP Current vs V Temperature (Note 8) −40˚C T
description.
CPo
=
25˚C
A
=
/2 10
V
Do
P
85˚C
A
Units
Units
nA %
%
%
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Charge Pump Current Specification Definitions
I1=CP sink current at V I2=CP sink current at V I3=CP sink current at V I4=CP source current at V I5=CP source current at V I6=CP source current at V V=Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
Note 6: IDovs V
1
*
2
{|I1| − |I3|}]/[1⁄
[
Note 7: I
Do-sink
[|I2| − |I5|]/[
Note 8: I
vs T
Do
@
temp| − |I2@25˚C|]/|I2@25˚C|*100%and [|I5@temp| − |I5@25˚C|]/|I5@25˚C|*100
[|I2
=
V
V
Do
P
=
/2
V
Do
P
=
V
Do
=
V
V
Do
P
=
/2
V
Do
P
=
V
Do
=
Charge Pump Output Current magnitude variation vs Voltage
Do
vs I
A
*
2
{|I1| + |I3|}]*100%and [1⁄
=
Do-source
1
=
Charge Pump Output Current Sink vs Source Mismatch
*
2
{|I2| + |I5|}]*100
%
Charge Pump Output Current magnitude variation vs Temperature
*
2
{|I4| − |I6|}]/[1⁄
=
*
2
{|I4| + |I6|}]*100
=
=
DS012806-37
and ground. Typical values are between 0.5V and 1.0V.
CC
%
%
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RF Sensitivity Test Block Diagram
Note 1: N=10,000 R=50 P=64 Note 2: Sensitivity limit is reached when the error of the divided RF output, F
Typical Performance Characteristics
ICCvs V
CC
LMX2330L
DS012806-19
ICCvs V
CC
LMX2332L
LD, is 1 Hz.
o
ICCvs V
CC
LMX2331L
IDoTRI-STATE vs D
Voltage
o
DS012806-38
DS012806-20
DS012806-21
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DS012806-22
Typical Performance Characteristics (Continued)
Charge Pump Current vs D
=
I
HIGH
CP
Voltage
o
Charge Pump Current Variation (See (Note 6) under Charge Pump Current Specification Definitions)
DS012806-23
Charge Pump Current vs DoVoltage
=
I
LOW
CP
Sink vs Source Mismatch (See (Note 7) under Charge Pump Current Specification Definitions)
DS012806-24
DS012806-25
DS012806-26
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Typical Performance Characteristics (Continued)
RF Input Impedance
=
V
2.7V to 5.5V, f
CC
=
50 MHz to 3 GHz
IN
DS012806-27
IF Input Impedance
=
V
2.7V to 5.5V, f
CC
=
50 MHz to 1000 MHz
IN
DS012806-28
LMX2330L RF Sensitivity vs Frequency
DS012806-29
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LMX2331L RF Sensitivity vs Frequency
DS012806-30
Typical Performance Characteristics (Continued)
LMX2332L RF Sensitivity vs Frequency
Oscillator Input Sensitivity vs Frequency
DS012806-31
IF Input Sensitivity vs Frequency
DS012806-32
DS012806-33
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Functional Description
The simplified block diagram below shows the 22-bit data register, two 15-bit R Counters and the 15- and 18-bit N Counters (in­termediate latches are notshown). Thedata streamis clocked (on the rising edge of Clock) intothe DATAregister, MSB first. The data stored in the shiftregister is loaded into one of 4 appropriate latches on the rising edge ofLE. The last two bits are the Con­trol Bits. The DATA is transferred into the counters as follows:
Control Bits DATA Location
C1 C2
0 0 IF R Counter 0 1 RF R Counter 1 0 IF N Counter 1 1 RF N Counter
DS012806-6
PROGRAMMABLE REFERENCE DIVIDERS (IF AND RF R COUNTERS)
If the Control Bits are 00 or 01 (00 for IF and 01 for RF) data is transferred from the 22-bit shift register into a latch which sets the 15-bit R Counter. Serial data format is shown below.
DS012806-7
15-BIT PROGRAMMABLE REFERENCE DIVIDER RATIO (R COUNTER)
Divide RRRRRRRRRRRRRRR
Ratio 15 14 13 12 11 10 987654321
3 000000000000011 4 000000000000100
• •••••••••••••••
32767 111111111111111
Notes:
Divide ratios less than 3 are prohibited. Divide ratio: 3 to 32767 R1 to R15: These bits select the divide ratio of the programmable reference divider. Data is shifted in MSB first.
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Functional Description (Continued)
PROGRAMMABLE DIVIDER (N COUNTER)
The N counter consists of the 7-bit swallow counter (A counter) and the 11-bit programmable counter (B counter). If the Control Bits are10 or 11 (10 for IFcounter and 11 for RF counter) data is transferred from the22-bit shift register into a 4-bit or 7-bit latch (which setsthe Swallow (A) Counter) and an 11-bit latch (which sets the 11-bit programmable (B) Counter), MSB first.Serial data format is shown below. For the IF N counter bits 5, 6, and 7 are don’t care bits. The RF N counter does not have don’t care bits.
DS012806-8
7-BIT SWALLOW COUNTER DIVIDE RATIO (A COUNTER) RF
Divide N7N6N5N4N3N2N
Ratio
1
A
0 0000000 1 0000001
• •••••••
127 1111111
Notes: Divide ratio: 0 to 127
B A
11-BIT PROGRAMMABLE COUNTER DIVIDE RATIO (B COUNTER)
Divide N18N17N16N15N14N13N12N11N10N9N
Ratio
B
3 00000000011 4 00000000100
• •••••••••••
2047 11111111111
Note: Divide ratio: 3 to 2047 (Divide ratios less than 3 are prohibited)
B A
PULSE SWALLOW FUNCTION
=
f
[(PxB)+A]xf
VCO
: Output frequency of external voltage controlled oscillator (VCO)
f
VCO
OSC
/R
B: Preset divide ratio of binary 11-bit programmable counter (3 to 2047) A: Preset divide ratio of binary 7-bit swallow counter
(0 A 127 {RF}, 0 A 15 {IF}, A B)
: Output frequency of the external reference frequency oscillator
f
OSC
R: Preset divide ratio of binary 15-bit programmable reference counter (3 to 32767) P: Preset modulus of dual moduIus prescaler (for IF;P=8or16;
for RF; LMX2330L: P=32 or 64 LMX2331L/32L: P=64 or 128)
IF
Divide N7N6N5N4N3N2N
Ratio
A
0 XXX0000 1 XXX0001
• •••••••
15 XXX1111
X=DON’T CARE condition
8
1
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Functional Description (Continued)
PROGRAMMABLE MODES
Several modes of operation can be programmed with bits R16–R20 including the phase detector polarity, charge pump TRI-STATE and the output of the F grammable modes are shown in
Table 3
.
C1 C2 R16 R17 R18 R19 R20
0 0 IF Phase IF I
0 1 RF Phase RF I
Phase Detector Polarity DoTRI-STATE I
(Note 11) (Note 9) (Note 10) Prescaler Prescaler Prescaler (Note 9) 0 Negative Normal Operation LOW 8/9 32/33 64/65 Pwrd Up 1 Positive TRI-STATE HIGH 16/17 64/65 128/129 Pwrd Dn
Note 9: Refer to POWERDOWN OPERATION in Functional Description. Note 10: The I Note 11: PHASE DETECTOR POLARITY
Depending upon VCO characteristics, R16 bit should be set accordingly: (see figure right) When VCO characteristics are positive like (1), R16 should be set HIGH; When VCO characteristics are negative like (2), R16 should be set LOW.
LOW current state=1/4xI
CPo
LD pin. The prescaler and powerdown modes are selected with bits N19 and N20. The pro-
o
Table 1
. Truth table for the programmable modes and FoLD output are shown in
Table 2
TABLE 1. Programmable Modes
CPo
IF D
o
IF LD IF F
o
Detector Polarity TRI-STATE
CPo
RF D
o
RF LD RF F
o
Detector Polarity TRI-STATE
C1 C2 N19 N20
1 0 IF Prescaler Pwdn IF 1 1 RF Prescaler Pwdn RF
TABLE 2. Mode Select Truth Table
IF 2330L RF 2331L/32L RF Pwdn
HIGH current.
CPo
CPo
and
VCO Characteristics
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DS012806-9
Functional Description (Continued)
TABLE 3. The F
RF R[19] IF R[19] RF R[20] IF R[20]
(RF LD) (IF LD) (RF F
0000Disabled (Note 12) 0100IFLock Detect (Note 13) 1000RFLock Detect (Note 13) 1100RF/IF Lock Detect (Note 13) X 0 0 1 IF Reference Divider Output X 0 1 0 RF Reference Divider Output X 1 0 1 IF Programmable Divider Output X 1 1 0 RF Programmable Divider Output 0011Fastlock (Note 14) 0111IFCounter Reset (Note 15) 1011RFCounter Reset (Note 15) 1111IFandRFCounter Reset (Note 15)
X=don’t care condition
Note 12: When the F Note 13: Lock detect output provided to indicate when the VCO frequency is in “lock.” When the loop is locked and a lock detect mode is selected, the pins output
is HIGH, with narrow pulses LOW. In the RF/IF lock detect mode a locked condition is indicated when RF and IF are both locked. Note 14: The Fastlock mode utilizes the F
occurs whenever the RF loop’s lcpo magnitude bit Note 15: The IF Counter Reset mode resets IF PLL’s R and N counters and brings IF charge pump output to a TRI-STATEcondition. The RF Counter Reset mode
resets RF PLL’s R and N counters and brings RF charge pump output to a TRI-STATE condition. The IF and RF Counter Reset mode resets all counters and brings both charge pump outputs to aTRI-STATE condition. Upon removal of the Reset bits then N counter resumes counting in “close” alignment with the Rcounter. (The maximum error is one prescaler cycle.)
LD output is disabled, it is actively pulled to a low logic state.
o
LD output pin to switch a second loop filter damping resistor to ground during fastlock operation.Activation of Fastlock
o
#
17 is selected HIGH (while the#19 and#20 mode bits are set for Fastlock).
LD (Pin 10) Output Truth Table
o
) (IF Fo)
o
Output State
F
o
POWERDOWN OPERATION
Synchronous and asynchronous powerdown modes are both available by MICROWIRE selection. Synchronously powerdown occurs if the respective loop’s R18 bit (Do TRI-STATE) is LOW when its N20 bit (Pwdn) becomes HI. Asynchronous powerdown occurs if the loop’s R18 bit is HI when its N20 bit becomes HI.
In the synchronous powerdown mode, the powerdown func­tion is gated by the charge pump to prevent unwanted fre­quency jumps. Once the powerdown program bit N20 is loaded, the part will go into powerdown mode when the charge pump reaches a TRI-STATE condition.
In the asynchronous powerdown mode, the device powers down immediately after the LE pin latches in a HI condition on the powerdown bit N20.
Activation of either the IF or RF PLL powerdown conditions in either synchronous or asynchronousmodes forces the re­spective loop’s R and N dividers to their load state condition and debiasing of its respective f state. The oscillator circuitry function does not become dis-
input to a high impedance
IN
abled until both IF andRF powerdownbits are activated.The MICROWIRE control register remains active and capable of loading and latching data during all of the powerdown modes.
The device returns to anactively powered up condition in ei­ther synchronous or asynchronousmodes immediatelyupon LE latching LOW data into bit N20.
Powerdown Mode Select Table
R18 N20 Powerdown Status
0 0 PLL Active 1 0 PLL Active
(Charge Pump Output TRI-STATE) 0 1 Synchronous Powerdown Initiated 1 1 Asynchronous Powerdown Initiated
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Functional Description (Continued)
SERIAL DATA INPUT TIMING
Note 1: Parenthesis data indicates programmable reference divider data.
Data shifted into register on clock rising edge. Data is shifted in MSB first.
=
Note 2: t
Test Conditions: The Serial Data Input Timing is tested using a symmetrical waveform around V
amplitudes of 2.2V@V
Data to Clock Set-Up Time
cs
=
Data to Clock Hold Time
t
CH
=
Clock Pulse Width High
t
CWH
=
Clock Pulse Width Low
t
CWL
=
Clock to Load Enable Set-Up Time
t
ES
=
Load Enable Pulse Width
t
EW
=
2.7V and 2.6V
CC
/2. The test waveform has an edge rate of 0.6 V/ns with
=
@
V
5.5V.
CC
CC
PHASE COMPARATOR AND INTERNAL CHARGE PUMP CHARACTERISTICS
Notes: Phase difference detection range: −2π to +2π
The minimum width pump up and pump down current pulses occur at the D R16=HIGH
pin when the loop is locked.
o
DS012806-10
DS012806-11
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Typical Application Example
Operational Notes:
*
VCO is assumed AC coupled.
**
RINincreases impedance so that VCO output power is provided to the load rather than the PLL. Typical values are 10to 200depending on the VCO
power level. fINRF impedance ranges from 40to 100.fINIF impedances are higher.
***
Adding RC filters to the VCClines is recommended to reduce loop-to-loop noise coupling.
Application Hints:
Proper use of grounds and bypass capacitors is essential to achieve a high level of performance. Crosstalk between pins can be reduced by careful board layout. This is an electrostatic sensitive device. It should be handled only at static free work stations.
DS012806-13
DS012806-12
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Application Information
A block diagram of the basic phase locked loop is shown in
FIGURE 1. Basic Charge Pump Phase Locked Loop
LOOP GAIN EQUATIONS
A linear control system model of the phase feedback for a PLL in the locked state is shown in gain is the product of the phase comparator gain (Kφ), the VCO gain (K the gain of the feedback counter modulus (N). The passive
/s), and the loop filter gain Z(s) divided by
VCO
loop filter configuration used is displayed in the complex impedance of the filter is given in
FIGURE 2. PLL Linear Model
FIGURE 3. Passive Loop Filter
The time constants which determine the pole and zero fre­quencies of the filter transfer function can be defined as
and
T2=R2
The 3rd order PLL Open Loop Gain can be calculated in terms of frequency, ω, the filter time constants T1 and T2, and the design constants K
Figure 2
. The open loop
DS012806-16
C2 (3)
, and N.
φ,KVCO
Figure 3
Equation (1)
DS012806-15
, while
(1)
(2)
Figure 1
.
DS012806-14
Equations (2), (3)
From
we can see that the phase term will be dependent on the single pole and zero such that the phase margin is determined in
.
φ(ω)=tan
−1
(ω•T2) − tan−1(ω•T1) + 180˚ (5)
Equation (5)
A plot of the magnitude and phase of G(s)H(s) for a stable loop, is shown in
φ
shows the amount ofphase margin that exists at the point
p
the gain drops below zero (the cutoff frequency wp of the
Figure 4
with a solid trace. The parameter
loop). In a critically damped system, the amount of phase margin would be approximately 45 degrees.
If we were now to redefine the cut off frequency, wp’, as double the frequency which gave us our original loop band­width, wp, the loop response time would be approximately halved. Because the filter attenuation at the comparison fre­quency also diminishes, the spurs would have increased by approximately 6 dB. In the proposed Fastlock scheme, the higher spur levels andwider loopfilter conditions would exist only during the initial lock-on phase — just long enough to reap the benefits of locking faster. The objective would be to open up the loop bandwidth but not introduce any additional complications or compromises related to our original design criteria. We would ideally like to momentarily shift the curve of
Figure 4
over to a different cutoff frequency, illustrated by the dotted line, without affecting the relative open loop gain and phase relationships. To maintain the same gain/phase relationship at twice the original cutoff frequency, other terms in the gainand phase
Equation (4)
and
Equation (5)
to compensate by the corresponding “1/w” or “1/w Examination of equations
Equations (2), (3)
indicates the damping resistor variable R2 could be chosen to compensate the “w”’ terms for the phase margin. This im­plies that another resistor ofequal valueto R2 will need tobe switched in parallel with R2 during the initial lock period. We must also insure that the magnitude of the open loop gain, H(s)G(s) is equal to zeroat wp’=2wp. K product of these terms can be changed by a factor of 4, to counteract the w
tion (2)
and
Equation (3)
2
term present in the denominator of
. The Kφ term was chosen to com-
vco
plete the transformation because it can readily be switched
(4)
.
will have
2
” factor.
and
Equation (5)
,Kφ, N,or thenet
Equa-
www.national.com 18
Application Information (Continued)
between 1X and 4X values.This isaccomplished byincreas­ing the charge pump output current from 1 mA in the stan­dard mode to 4 mA in Fastlock.
FIGURE 4. Open Loop Response Bode Plot
FASTLOCK CIRCUIT IMPLEMENTATION
A diagram of the Fastlock scheme as implemented in Na­tional Semiconductors LMX233XL PLL is shown in When a new frequency is loaded, and the RF Icp high the charge pump circuit receives an input to deliver 4 times the normal current per unit phase error while an open drain NMOS on chipdevice switches in a second R2 resistor element to ground. The usercalculates theloop filtercompo­nent values for the normal steady state considerations. The device configuration ensures that as long as a second iden-
Figure 5
bit is set
o
DS012806-17
tical damping resistor is wired in appropriately, the loop will lock faster without any additional stability considerations to
.
account for. Once locked on the correct frequency, the user can return the PLL to standard low noise operation by send­ing a MICROWIRE instruction with the RF Icp This transition does not affect the charge on the loop filter capacitors and is enacted synchronous with the charge pump output. This creates a nearly seamless change be­tween Fastlock and standard mode.
bit set low.
o
FIGURE 5. Fastlock PLL Architecture
DS012806-18
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Physical Dimensions inches (millimeters) unless otherwise noted
20-Lead (0.173" Wide) Thin Shrink Small Outline Package (TM)
Order Number LMX2330LTM, LMX2331LTM or LMX2332LTM
Order Number LMX2330LTMX, LMX2331LTMX or LMX2332LTMX
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*
For Tape and Reel (2500 units per reel)
NS Package Number MTC20
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RF
Personal Communications
Order Number LMX2330LSLB, LMX2331LSLB or LMX2332LSLB
24-Pin Chip Scale Package
*
For Tape and Reel (2500 Units per Reel)
Order Number LMX2330LSLBX, LMX2331LSLBX or LMX2332LSLBX
NS Package Number SLB24A
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