National Semiconductor LMX2330L, LMX2331L, LMX2332L Technical data

查询LMX2330L供应商

LMX2330L/LMX2331L/LMX2332L
PLLatinum
RF Personal Communications

LMX2330L 2.5 GHz/510 MHz
LMX2331L 2.0 GHz/510 MHz
LMX2332L 1.2 GHz/510 MHz

General Description

The LMX233XL family of monolithic, integrated dual fre­quency synthesizers,including prescalers, is to be used as a
local oscillator for RF and first IF of a dual conversion trans­ceiver. It is fabricated using National’s 0.5µ ABiC V silicon
BiCMOS process.

The LMX233XL contains dual modulus prescalers. A 64/65
or a 128/129 prescaler (32/33 or 64/65 in the 2.5 GHz
LMX2330L) can be selected forthe RFsynthesizer anda 8/9
or a 16/17 prescaler can be selected for the IF synthesizer.
LMX233XL, which employs a digitalphase locked loop tech­nique, combined with a high quality reference oscillator,pro­vides the tuning voltages for voltage controlled oscillators to
generate very stable, low noise signals for RF and IF local
oscillators. Serial data is transferred into the LMX233XL via
a three wire interface (Data, Enable, Clock). Supply voltage
can rangefrom 2.7V to 5.5V.The LMX233XLfamily features
very low current consumption;

LMX2330L—5.0 mA at 3V, LMX2331L — 4.0 mA at 3V,
LMX2332L—3.0 mA at 3V.

The LMX233XL are available in a TSSOP 20-pin and CSP
24-pin surface mount plastic package.

™

Low Power Dual Frequency Synthesizer for

Features

n Ultra low current consumption
n 2.7V to 5.5V operation
n Selectable synchronous or asynchronous powerdown

mode:

=

I

1 µA typical at 3V

CC

n Dual modulus prescaler:

LMX2330L (RF) 32/33 or 64/65
LMX2331L/32L (RF) 64/65 or 128/129
LMX2330L/31L/32L (IF) 8/9 or 16/17

n Selectable charge pump TRI-STATE
n Selectable charge pump current levels
n Selectable Fastlock
n Upgrade and compatible to LMX233XA family

™

mode

®

mode

Applications

n Portable Wireless Communications

(PCS/PCN, cordless)

n Cordless and cellular telephone systems
n Wireless Local Area Networks (WLANs)
n Cable TV tuners (CATV)
n Other wireless communication systems

June 1999

LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RF

Personal Communications

Functional Block Diagram

DS012806-1

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

™

Fastlock

, MICROWIRE™and PLLatinum™are trademarks of National Semiconductor Corporation.

© 1999 National Semiconductor Corporation DS012806 www.national.com

Connection Diagrams

Chip Scale Package (SLB)

(Top View)

DS012806-39

Order Number LMX2330LSLB, LMX2331LSLB or

LMX2332LSLB

NS Package Number SLB24A

Pin Descriptions

Thin Shrink Small Outline Package (TM)

(Top View)

DS012806-2

Order Number LMX2330LTM, LMX2331LTM or

LMX2332LTM

NS Package Number MTC20

Pin No.

LMX233XLSLB

24-pinCSP

Package

24 1 V

Pin No.
LMX233XLTM
20-pin TSSOP

Package

Pin

Name

CC

I/O Description

1 — Power supply voltage input for RF analog and RF digital circuits. Input

may range from 2.7V to 5.5V. V
capacitors should be placed as close as possible to this pin and be

1 must equal VCC2. Bypass

CC

connected directly to the ground plane.
22V
33D

1 — Power Supply for RF charge pump. Must be ≥ VCC.

P

RF O Internal charge pump output. For connection to a loop filter for driving

o

the input of an external VCO.
4 4 GND — Ground for RF digital circuitry.
55f
66f

RF I RF prescaler input. Small signal input from the VCO.

IN

RF I RF prescaler complementary input. A bypass capacitor should be

IN

placed as close as possible to this pin and be connected directly to the

ground plane. Capacitor is optional with some loss of sensitivity.
7 7 GND — Ground for RF analog circuitry.
8 8 OSC

10 9 GND — Ground for IF digital, MICROWIRE
11 10 F

LD O Multiplexed output of the RF/IF programmable or reference dividers,

o

I Oscillator input. The input has a VCC/2 input threshold and can be

in

driven from an external CMOS or TTL logic gate.

™

,FoLD, and oscillator circuits.

RF/IF lock detect signals and Fastlock mode. CMOS output

Programmable Modes).

12 11 Clock I High impedance CMOS Clock input. Data for the various counters is

clocked in on the rising edge, into the 22-bit shift register.

14 12 Data I Binary serial data input. Data entered MSB first. The last two bits are

the control bits. High impedance CMOS input.

(see

www.national.com 2

Pin Descriptions (Continued)

Pin No.

LMX233XLSLB

24-pinCSP

Package

Pin No.
LMX233XLTM
20-pin TSSOP

Package

Pin

Name

I/O Description

15 13 LE I Load enable high impedance CMOS input. When LE goes HIGH, data

stored in the shift registers is loaded into one of the 4 appropriate

latches (control bit dependent).
16 14 GND — Ground for IF analog circuitry.
17 15 f

IF I IF prescaler complementary input. A bypass capacitor should be placed

IN

as close as possible to this pin and be connected directly to the ground

plane. Capacitor is optional with some loss of sensitivity.
18 16 f
19 17 GND — Ground for IF digital, MICROWIRE, F
20 18 D

22 19 V
23 20 V

IF I IF prescaler input. Small signal input from the VCO.

IN

IF O IF charge pump output. For connection to a loop filter for driving the

o

2 — Power Supply for IF charge pump. Must be ≥ VCC.

P

2 — Power supply voltage input for IF analog, IF digital, MICROWIRE,

CC

input of an external VCO.

LD, and oscillator circuits. Input may range from 2.7V to 5.5V. VCC2

F

o

must equal V

possible to this pin and be connected directly to the ground plane.

1. Bypass capacitors should be placed as close as

CC

LD, and oscillator circuits.

o

1, 9, 13, 21 X NC — No connect.

www.national.com3

Block Diagram

Note: The RF prescaler for the LMX2331L/32L is either 64/65 or 128/129, while the prescaler for the LMX2330Lis 32/33 or 64/65.

1 supplies power to the RF prescaler, N-counter, R-counter and phase detector. VCC2 supplies power to the IF prescaler, N-counter, phase detector,

Note: V

CC

R-counter along with the OSC

1 and VP2 can be run separately as long as VP≥ VCC.

Note: V

P

buffer, MICROWIRE, and FoLD. VCC1 and VCC2 are clamped to each other by diodes and must be run at the same voltage level.

in

www.national.com 4

DS012806-3

Absolute Maximum Ratings (Notes 1,

2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Power Supply Voltage

V

CC

V

P

Voltage on Any Pin

with GND=0V (V

Storage Temperature Range (T

) −0.3V to VCC+0.3V

I

) −65˚C to +150˚C

S

Lead Temperature (solder 4 sec.) (T

−0.3V to +6.5V

−0.3V to +6.5V

) +260˚C

L

Recommended Operating
Conditions

Power Supply Voltage

V

CC

V

P

Operating Temperature (T

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi­tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi­tions, see the Electrical Characteristics. The guaranteed specificationsapply
only for the test conditions listed.

Note 2: This device is ahigh performance RF integrated circuit with anESD

<

2 keV and is ESD sensitive. Handling and assembly of this device

rating
should only be done at ESD protected work stations.

) −40˚C to +85˚C

A

2.7V to 5.5V

VCCto +5.5V

Electrical Characteristics

=

V

CC

Symbol Parameter Conditions

I

CC

I

CC-PWDN

f

RF Operating LMX2330L 0.5 2.5

IN

f

IF Operating LMX233xL 45 510 MHz

IN

f

OSC

f

φ

Pf

RF RF Input Sensitivity V

IN

Pf

IF IF Input Sensitivity V

IN

V

OSC

V

IH

V

IL

I

IH

I

IL

I

IH

I

IL

V

OH

V

OL

t

CS

t

CH

t

CWH

t

CWL

3.0V, V

=

3.0V; −40˚C

P

<

<

T

85˚C, except as specified

A

Value

Min Typ Max

Power LMX2330L RF + IF V

=

2.7V to 5.5V 5.0 6.6

CC

Supply LMX2330L RF Only 4.0 5.2
Current LMX2331L RF + IF 4.0 5.4

LMX2331L RF Only 3.0 4.0 mA
LMX2332L IF + RF 3.0 4.1
LMX2332L RF Only 2.0 2.7
LMX233xL IF Only 1.0 1.4

Powerdown Current (Note 3) 1 10 µA

Frequency LMX2331L 0.2 2.0 GHz

LMX2332L 0.1 1.2

Frequency
Oscillator Frequency 5 40 MHz
Maximum Phase Detector 10 MHz
Frequency

=

3.0V −15 0 dBm

CC

=

V

5.0V −10 0 dBm

CC

=

2.7V to 5.5V −10 0 dBm
Oscillator Sensitivity OSC
High-Level Input Voltage (Note 4) 0.8 V
Low-Level Input Voltage (Note 4) 0.2 V
High-Level Input Current V

Low-Level Input Current V

Oscillator Input Current V
Oscillator Input Current V
High-Level Output Voltage

LD, pin number 10)

(for F

o

Low-Level Output Voltage (for

LD, pin number 10)

F

o

CC

in

=

=

V

IH

(Note 4)

IL

(Note 4)

IH
IL

I

OH

I

OL

5.5V

CC

=

=

=

=

=

=

0V, V

V

0V, V

5.5V

CC

=

5.5V 100 µA

CC

=

5.5V −100 µA

CC

−500 µA V

500 µA 0.4 V

0.5 V

CC

−1.0 1.0 µA

−1.0 1.0 µA

− 0.4 V

CC

CC

Data to Clock Set Up Time See Data Input Timing 50 ns
Data to Clock Hold Time See Data Input Timing 10 ns
Clock Pulse Width High See Data Input Timing 50 ns
Clock Pulse Width Low See Data Input Timing 50 ns

Units

PP

V
V

www.national.com5

Electrical Characteristics (Continued)

=

V

CC

Symbol Parameter Conditions

t

ES

t

EW

Note 3: Clock, Data and LE=GND or Vcc.
Note 4: Clock, Data and LE does not include f

3.0V, V

=

3.0V; −40˚C

P

<

<

T

85˚C, except as specified

A

Value

Min Typ Max

Clock to Load Enable Set Up Time See Data Input Timing 50 ns
Load Enable Pulse Width See Data Input Timing 50 ns

RF, fINIF and OSCIN.

IN

Charge Pump Characteristics

=

V

3.0V, V

CC

Symbol Parameter Conditions

-SOURCE Charge Pump Output V

I

Do

I

-SINK Current V

Do

I

-SOURCE V

Do

I

-SINK V

Do

I

-TRI Charge Pump 0.5V ≤ VDo≤ VP− 0.5V −2.5 2.5

Do

I

-SINK vs CP Sink vs V

Do

I

SOURCE Source Mismatch (Note 7) T

Do-

I

vs V

Do

Do

I

vs T

Do

A

Note 5: See PROGRAMMABLE MODES for I

=

3.0V; −40˚C

P

<

TA≤ 85˚C, except as specified

Value

Min Typ Max

Do
Do
Do
Do

TRI-STATE Current −40˚C

Do

=

A

=
=
=
=

=

25˚C

V
V
V
V

<

V

=

/2, I

P

/2, I

P

/2, I

P

/2, I

P

T
/2 3 10

P

HIGH (Note 5) −4.0 mA

CPo

=

HIGH (Note 5) 4.0 mA

CPo

=

LOW (Note 5) −1 mA

CPo

=

LOW (Note 5) 1 mA

CPo

<

85˚C

A

CP Current vs Voltage 0.5 ≤ VDo≤ VP− 0.5V 10 15
(Note 6) T
CP Current vs V
Temperature (Note 8) −40˚C ≤ T

description.

CPo

=

25˚C

A

=

/2 10

V

Do

P

≤ 85˚C

A

Units

Units

nA
%

%

%

www.national.com 6

Charge Pump Current Specification Definitions

I1=CP sink current at V
I2=CP sink current at V
I3=CP sink current at V
I4=CP source current at V
I5=CP source current at V
I6=CP source current at V
∆V=Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V

Note 6: IDovs V

1

*

⁄

2

{|I1| − |I3|}]/[1⁄

[

Note 7: I

Do-sink

[|I2| − |I5|]/[

Note 8: I

vs T

Do

@

temp| − |I2@25˚C|]/|I2@25˚C|*100%and [|I5@temp| − |I5@25˚C|]/|I5@25˚C|*100

[|I2

=

− ∆V

V

Do

P

=

/2

V

Do

P

=

∆V

Do

=

− ∆V

V

Do

P

=

/2

V

Do

P

=

∆V

Do

=

Charge Pump Output Current magnitude variation vs Voltage

Do

vs I

A

*

2

{|I1| + |I3|}]*100%and [1⁄

=

Do-source

1

=

Charge Pump Output Current Sink vs Source Mismatch

*

⁄

2

{|I2| + |I5|}]*100

%

Charge Pump Output Current magnitude variation vs Temperature

*

2

{|I4| − |I6|}]/[1⁄

=

*

2

{|I4| + |I6|}]*100

=

=

DS012806-37

and ground. Typical values are between 0.5V and 1.0V.

CC

%

%

www.national.com7