National Semiconductor LMX2324 Technical data
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LMX2324
PLLatinum
Personal Communications
™
2.0 GHz Frequency Synthesizer for RF
LMX2324 PLLatinum 2.0 GHz Frequency Synthesizer for RF Personal Communications
PRELIMINARY
November 1999
General Description
The LMX2324 is a high performance frequency synthesizer
with integrated 32/33 dual modulus prescaler designed for
RF operation up to 2.0 GHz. Using a proprietary digital
phase locked loop technique, the LMX2324’s linear phase
detector characteristics can generate very stable, low noise
control signals for UHF and VHF voltage controlled oscillators.
Serial data is transferred into the LMX2324 via a three-line
MICROWIRE
range is from 2.7V to 5.5V. The LMX2324 features very low
current consumption, typically 3.5 mA at 3V. The charge
pump provides 4 mA output current.
The LMX2324 is manufactured using National’s ABiC V
BiCMOS process and is packaged in a 16-pin TSSOP and a
16-pin Chip Scale Package (CSP).
™
interface (Data, LE, Clock). Supply voltage
Functional Block Diagram
Features
n RF operation up to 2.0 GHz
n 2.7V to 5.5V operation
n Low current consumption: I
3.0V
n Dual modulus prescaler: 32/33
n Internal balanced, low leakage charge pump
= 3.5 mA (typ) at VCC=
CC
Applications
n Cellular telephone systems (GSM, NADC, CDMA, PDC)
n Personal wireless communications (DCS-1800, DECT,
CT-1+)
n Wireless local area networks (WLANs)
n Other wireless communication systems
DS101030-1
TRI-STATE®is a registered trademark of National SemiconductorCorporation.
™
MICROWIRE
© 1999 National Semiconductor Corporation DS101030 www.national.com
and PLLatinum™are trademarks of National Semiconductor Corporation.
Connection Diagrams
LMX2324
TSSOP 16-Pin Package
DS101030-2
Order Number LMX2324TM, LM2324TMX
See NS Package Number MTC16
CSP 16-Pin Package
Top View
Order Number LMX2324SLBX
See NS Package Number SLB16A
Pin Descriptions
Pin No.
TSSOP16 CSP16
21V
32CP
4 3 GND — Ground.
54f
65f
7 6 NC No Connect
8 7 NC No Connect
9 8 OSC
10 9 NC No Connect
12 10 Clock I High impedance CMOS Clock input. Data is clocked in on the rising edge,
13 11 Data I Binary serial data input. Data entered MSB first. LSB is control bit. High
14 12 LE I Load Enable input. When Load Enable transitions HIGH, data is loaded
15 13 NC No Connect
11 14 NC No Connect
16 15 CE I CHIP Enable. A LOW on CE powers down the device asynchronously and
116V
Pin
Name
P
o
INB
IN
CC
I/O Description
— Power supply for charge pump. Must be ≥ V
CC
O Internal charge pump output. For connection to a loop filter for driving the
voltage control input of an external oscillator.
I RF prescaler complimentary input. In single-ended mode, a bypass
capacitor should be placed as close as possible to this pin and be
connected directly to the ground plane. The LMX2324 can be driven
differentially when the bypass capacitor is omitted.
I RF prescaler input. Small signal input from the voltage controlled oscillator.
I Oscillator input. A CMOS inverting gate input. The input has a VCC/2 input
in
threshold and can be driven from an external CMOS or TTL logic gate.
into the various counters and registers.
impedance CMOS input.
into either the N or R register (control bit dependent). See timing diagram.
will TRI-STATE
®
the charge pump output.
I Power supply voltage input. Input may range from 2.7V to 5.5V. Bypass
capacitors should be placed as close as possible to this pin and be
connected directly to the ground plane.
DS101030-3
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage (V
Power Supply for Charge Pump (V
Voltage on Any Pin with
GND=0V (V
) −0.3V to VCC+ 0.3V
I
Storage Temperature Range (T
Lead Temperature (solder, 4 sec.) (T
ESD - Human Body Model (Note 2) 2 kV
Electrical Characteristics (V
) −0.3V to 6.5V
CC
)V
P
) −65˚C to +150˚C
S
) +260˚C
L
CC
=
3V, V
CC
to 6.5V
P
Recommended Operating
Conditions
Power Supply Voltage (V
Power Supply for Charge Pump (V
Operating Temperature (T
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should on be done on ESD
protected workstations.
=
3V; −40˚C
<
T
A
(Note 1)
) 2.7V to 5.5V
CC
) −40˚C to +85˚C
A
<
85˚C except as specified).
)V
P
CC
to 5.5V
Symbol Parameter Conditions Min Typ Max Units
GENERAL
I
CC
I
-PWDN Power Down Current 10 µA
CC
f
IN
OSC
in
f
PD
Pf
IN
V
OSC
Power Supply Current VCC= 2.7V to 5.5V 3.5 mA
fINOperating Frequency 0.1 2.0 GHz
Oscillator Operating Frequency 5 40 MHz
Phase Detector Frequency 10 MHz
Input Sensitivity f
through a 10 pF capacitor
INB
grounded
VCC= 3.0V −15 0
= 5.0V −10 0
V
CC
Oscillator Sensitivity 0.4 1.0 VCC−0.3 V
CHARGE PUMP
ICP
o-source
ICP
o-sink
ICP
o-Tri
vs.
ICP
o
VCP
o
ICP
o-sink
ICP
o-source
vs. T Charge Pump Output Current
ICP
o
Charge Pump Output Current VCPo=VP/2 −4.0 mA
4.0 mA
Charge Pump TRI-STATE
Current
Charge Pump Output Current
Variation vs. Voltage (Note 4)
vs.
Charge Pump Output Current
Sink vs. Source Mismatch
0.5 ≤ VCPo≤ VP- 0.5
T = 25˚C
0.5 ≤ VCPo≤ VP- 0.5
T = 25˚C
o=VP
/2
VCP
T = 25˚C 5
0.1 nA
10
(Note 4)
Magnitude Variation vs.
VCP
−40˚C ≤ T ≤ +85˚C 10
o=VP
/2
Temperature (Note 4)
DIGITAL INTERFACE (DATA, CLK, LE, CE)
V
IH
V
IL
I
IH
I
IL
I
IH
I
IL
High-Level Input Voltage (Note 3) 0.8 V
Low-Level Input Voltage (Note 3) 0.2 V
CC
CC
High-Level Input Current VIH=VCC= 5.5V −1.0 1.0 µA
Low-Level Input Current VIL=0,VCC= 5.5V −1.0 1.0 µA
Oscillator Input Current VIH=VCC= 5.5V 100 µA
VIL=0,VCC= 5.5V −100 µA
MICROWIRE TIMING
t
CS
t
CH
t
CWH
t
CWL
t
ES
t
EW
Note 3: Except fINand OSC
Note 4: See related equations in charge pump current specification definitions
Data to Clock Set Up Time See Data Input Timing 50 ns
Data to Clock Hold Time See Data Input Timing 10 ns
Clock Pulse Width High See Data Input Timing 50 ns
Clock Pulse Width Low See Data Input Timing 50 ns
Clock to Enable Set Up Time See Data Input Timing 50 ns
Enable Pulse Width See Data Input Timing 50 ns
in
LMX2324
dBm
PP
%
%
%
V
V
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Charge Pump Current Specification Definitions
LMX2324
I1=CP sink current at VCP
I2=CP sink current at VCP
I3=CP sink current at VCP
I4=CP source current at VCP
I5=CP source current at VCP
I6=CP source current at VCP
∆V=Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
vs. VCP
1. ICP
o
1
[
⁄
2. ICP
[|I2| − |I5|]/[
3. ICP
[|I2
o
*
2
{|I1| − |I3|}]/[1⁄
vs. ICP
o-sink
1
*
⁄
2
vs. T=Charge Pump Output Current magnitude variation vs. Temperature
o
@
temp| − |I2@25˚C|]/|I2@25˚C|*100%and [|I5@temp| − |I5@25˚C|]/|I5@25˚C|*100
=
− ∆V
V
o
P
=
/2
V
o
P
=
∆V
o
=
− ∆V
V
o
P
=
/2
V
o
P
=
∆V
o
=
Charge Pump Output Current magnitude variation vs. Voltage
*
2
{|I1| + |I3|}]*100%and [1⁄
=
Charge Pump Output Current Sink vs. Source Mismatch
o-source
{|I2| + |I5|}]*100
%
*
2
{|I4| − |I6|}]/[1⁄
*
2
{|I4| + |I6|}]*100
=
%
=
=
DS101030-4
and ground. Typical values are between 0.5V and 1.0V.
P
%
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