1.1 GHz Frequency Synthesizer
for RF Personal Communications
General Description
The LMX1501A and the LMX1511 are high performance frequency synthesizers with integrated prescalers designed for
RF operation up to 1.1 GHz. They are fabricated using National’s ABiC IV BiCMOS process.
The LMX1501A and the LMX1511 contain dual modulus
prescalers which can select either a 64/65 or a 128/129
divide ratio at input frequencies of up to 1.1 GHz. Using a
proprietary digital phase locked loop technique, the
LMX1501A/11’s linear phase detector characteristics can
generate very stable, low noise local oscillator signals.
Serial data is transferred into the LMX1501A and the
LMX1511 via a three line MICROWIRE
TM
interface (Data,
Enable, Clock). Supply voltage can range from 2.7V to 5.5V.
The LMX1501A and the LMX1511 feature very low current
consumption, typically 6 mA at 3V.
The LMX1501A is available in a JEDEC 16-pin surface
mount plastic package. The LMX1511 is available in a
TSSOP 20-pin surface mount plastic package.
Block Diagram
Features
Y
RF operation up to 1.1 GHz
Y
2.7V to 5.5V operation
Y
Low current consumption:
I
CC
Y
Dual modulus prescaler: 64/65 or 128/129
Y
Internal balanced, low leakage charge pump
Y
Small-outline, plastic, surface mount JEDEC, 0.150
wide, (1501A) or TSSOP, 0.173×wide, (1511) package
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
TM
MICROWIRE
C
1995 National Semiconductor CorporationRRD-B30M115/Printed in U. S. A.
and PLLatinumTMare trademarks of National Semiconductor Corporation.
TL/W/12340
Connection Diagrams
LMX1501A
LMX1511
JEDEC 16-Lead (0.150×Wide) Small
Outline Molded Package (M)
Order Number LMX1501AM or LMX1501AMX
See NS Package Number M16A
TL/W/12340– 2
TL/W/12340– 3
20-Lead (0.173×Wide) Thin Shrink
Small Outline Package (TM)
Order Number LMX1511TM or LMX1511TMX
See NS Package Number MTC20
Pin Descriptions
Pin No.Pin No.Pin Name
1501A15111501A/1511
11OSC
23OSC
34V
45V
56D
IN
OUT
P
CC
o
67GNDGround.
78LDOLock detect. Output provided to indicate when the VCO frequency is in ‘‘lock’’.
810f
IN
911CLOCKIHigh impedance CMOS Clock input. Data is clocked in on the rising edge, into
1013DATAIBinary serial data input. Data entered MSB first. LSB is control bit. High
1114LEILoad enable input (with internal pull-up resistor). When LE transitions HIGH,
1215FCIPhase control select (with internal pull-up resistor). When FC is LOW, the
X16BISWOAnalog switch output. When LE is HIGH, the analog switch is ON, routing the
13f
14f
X17f
1518w
1620w
r
p
OUT
p
r
X2,9,12,19NCNo connect.
I/ODescription
IOscillator input. A CMOS inverting gate input intended for connection to a
crystal resonator for operation as an oscillator. The input has a V
threshold and can be driven from an external CMOS or TTL logic gate. May also
CC
/2 input
be used as a buffer for an externally provided reference oscillator.
OOscillator output.
Power supply for charge pump must betVCC.
Power supply voltage input. Input may range from 2.7V to 5.5V. Bypass
capacitors should be placed as close as possible to this pin and be connected
directly to the ground plane.
OInternal charge pump output. For connection to a loop filter for driving the input
of an external VCO.
When the loop is locked, the pin’s output is HIGH with narrow low pulses.
IPrescaler input. Small signal input from the VCO.
the various counters and registers.
impedance CMOS input.
data stored in the shift registers is loaded into the appropriate latch (control bit
dependent). Clock must be low when LE toggles high or low. See Serial Data
Input Timing Diagram.
polarity of the phase comparator and charge pump combination is reversed.
internal charge pump output through BISW (as well as through Do).
OMonitor pin of phase comparator input. Programmable reference divider output.
OMonitor pin of phase comparator input. Programmable divider output.
OMonitor pin of phase comparator input. CMOS Output.
OOutput for external charge pump. wpis an open drain N-channel transistor and
requires a pull-up resistor.
OOutput for external charge pump. wris a CMOS logic output.
2
Functional Block Diagram
LMX1501A
TL/W/12340– 40
3
Functional Block Diagram (Continued)
LMX1511
TL/W/12340– 4
4
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Power Supply Voltage
V
CC
V
P
Voltage on Any Pin
with GND
e
0V (VI)
Storage Temperature Range (TS)
Lead Temperature (TL) (solder, 4 sec.)
b
0.3V toa6.5V
b
0.3V toa6.5V
b
0.3V toa6.5V
b
65§Ctoa150§C
a
260§C
Recommended Operating
Conditions
Power Supply Voltage
V
CC
V
P
Operating Temperature (TA)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Ratings indicate conditions for which the
device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test
conditions listed.
2.7V to 5.5V
VCCto 5.5V
b
40§Ctoa85§C
Electrical Characteristics V
CC
e
5.0V, V
e
5.0V;b40§CkT
P
k
85§C, except as specified
A
SymbolParameterConditionsMinTypMaxUnits
I
CC
f
IN
f
OSC
f
w
Pf
IN
V
OSC
V
IH
V
IL
I
IH
I
IL
I
IH
I
IL
I
IH
I
IL
*Except fINand OSC
Power Supply CurrentV
Maximum Operating Frequency1.1GHz
Maximum Oscillator Frequency20MHz
Maximum Phase Detector Frequency10MHz
Input SensitivityV
Oscillator SensitivityOSC
High-Level Input Voltage*0.7 V
Low-Level Input Voltage*0.3 V
High-Level Input Current (Clock, Data)V
Low-Level Input Current (Clock, Data)V
Oscillator Input CurrentV
High-Level Input Current (LE, FC)V
Low-Level Input Current (LE, FC)V
IN
e
3.0V6.08.0mA
CC
e
V
5.0V6.58.5mA
CC
CC
IH
IL
IH
V
IL
IH
IL
e
2.7V to 5.5V
IN
e
V
CC
e
0V, V
e
V
CC
e
0V, V
e
V
CC
e
0V, V
e
5.5V
e
5.5V
CC
e
5.5V100mA
e
5.5V
CC
e
5.5V
e
5.5V
CC
b
10
0.5V
CC
b
1.01.0mA
b
1.01.0mA
b
100mA
b
1.01.0mA
b
1001.0mA
a
6dBm
CC
PP
V
V
5
Electrical Characteristics V
CC
e
5.0V, V
e
5.0V;b40§CkT
P
k
85§C, except as specified (Continued)
A
SymbolParameterConditionsMinTypMaxUnits
I
Do-source
I
Do-sink
I
Do-Tri
V
OH
V
OL
V
OH
V
OL
I
OL
I
OH
R
ON
t
CS
t
CH
t
CWH
t
CWL
t
ES
t
EW
**Except OSC
Charge Pump Output CurrentV
Charge Pump TRI-STATEÉCurrent0.5VsV
High-Level Output VoltageI
Low-Level Output VoltageI
High-Level Output Voltage (OSC
Low-Level Output Voltage (OSC
)I
OUT
)I
OUT
Open Drain Output Current (wp)V
Open Drain Output Current (wp)V
e
VP/2
D
o
e
V
VP/25.0mA
D
o
s
b
V
D
o
e
25§C
T
eb
1.0 mA**V
OH
e
1.0 mA**0.4V
OL
eb
200 mAV
OH
e
200 mA0.4V
OL
e
5.0V, V
CC
e
5.5V100mA
OH
0.5V
P
e
0.4V1.0mA
OL
b
5.05.0nA
b
CC
b
CC
Analog Switch ON Resistance (1511)100X
Data to Clock Set Up TimeSee Data Input Timing50ns
Data to Clock Hold TimeSee Data Input Timing10ns
Clock Pulse Width HighSee Data Input Timing50ns
Clock Pulse Width LowSee Data Input Timing50ns
Clock to Enable Set Up TimeSee Data Input Timing50ns
Enable Pulse WidthSee Data Input Timing50ns
OUT
b
5.0mA
0.8V
0.8V
6
Typical Performance Characteristics
ICCvs V
CC
I
TRI-STATE vs DoVoltage
D
o
Charge Pump Current vs DoVoltage
Charge Pump Current Variation
TL/W/12340– 5
TL/W/12340– 7
TL/W/12340– 6
Charge Pump Current vs DoVoltage
TL/W/12340– 8
Oscillator Input Sensitivity
TL/W/12340– 9
TL/W/12340– 10
7
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