National Semiconductor LMV242 Technical data

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LMV242
Dual Output, Quad-Band GSM/GPRS Power Amplifier
Controller

LMV242 Dual Output, Quad-Band GSM/GPRS Power Controller

July 2004

General Description

The LMV242 is a power amplifier (PA) controller intended for
use within an RF transmit power control loop in GSM/GPRS
mobile phones. The LMV242 supports all single-supply PA’s
including InGaP, HBT and bipolar power amplifiers. The
device operates with a single supply from 2.6V to 5.5V.

Included in the PA controller are an RF detector, a ramp filter
and two selectable output drivers that function as error am­plifiers for two different bands. The LMV242 input interface
consists two analog and two digital inputs. The analog inputs
are the RF input, Ramp voltage input. The digital inputs
perform the function of “Band Select” and “Shutdown/
Transmit Enable” respectively. The “Band Select” function
enables either of two outputs, namely OUT1 when BS =
High, or output OUT2 when BS = Low. The output that is not
enabled is pulled low to the minimum output voltage. The
LMV242 is active in the case TX_EN = High. When TX_EN
= Low the device is in a low power consumption shutdown
mode. During shutdown both outputs will be pulled low to the
minimum output voltage. Individual PA characteristics are
accommodated by a user selectable external RC combina­tion.

The LMV242 is offered in fully tested die form as well as in a
10-lead LLP package and is therefore especially suitable for
small footprint PA module solutions.

Typical Application

Features

n Support of InGaP HBT, bipolar technology
n Quad-band operation
n Shutdown mode for power save in R
n Integrated ramp filter
n 50 dB RF detector
n GPRS compliant
n External loop compensation option
n Accurate temperature compensation
n LLP package 3x3 mm and fully tested die sales

slot

X

Applications

n GSM/GPRS/TDMA/TD_SCDMA mobile phone
n Pulse RF control
n Wireless LAN
n GSM/GPRS power amplifier module
n Transmit module

20079501

VIP®is a registered trademark of National Semiconductor Corporation.

© 2004 National Semiconductor Corporation DS200795 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

LMV242

please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage

- GND 6.5V Max

V

DD

ESD Tolerance (Note 2)

Human Body Model 2 kV

Machine Model 200V

Storage Temperature Range −65˚C to 150˚C

Junction Temperature (Note 6) 150˚C Max

Mounting Temperature

Infrared or convection (20 sec) 235˚C

Operating Ratings (Note 1)

Supply Voltage 2.6V to 5.5V

Operating Temperature
Range −40˚C to +85˚C

V

Voltage Range 0V to 2V

RAMP

RF Frequency Range 450 MHz to 2 GHz

2.6V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to T

= 2.6V. Boldface limits apply at temperature extremes (Note 4).

V

DD

= 25˚C.

J

Symbol Parameter Condition Min Typ Max Units

I

DD

Supply Current V

=(VDD- GND)/2 6.9 9

OUT

mA

12

0.2 30 µA

V

HIGH

V

LOW

T

ON

I

EN,IBS

In Shutdown (TX_EN = 0V)

=(VDD- GND)/2

V

OUT

Logic Level to Enable Power (Note 7) 1.8 V

Logic Level to Disable Power (Note 7) 0.8 V

Turn-on-Time from Shutdown 3.6 6 µs

Current into TX_EN and BS Pin 0.03 5 µA

RAMP Amplifier

V

RD

1/R

RAMP

I

OUT RAMP

V

Deadband 155 206 265 mV

RAMP

Transconductance (Note 8) 70 96 120 µA/V

Ramp Amplifier Output Current V

=2V 100 162 µA

RAMP

RF Input

P

IN

RF Input Power Range (Note 5) 20 kΩ // 68 pF between

COMP1

and V

COMP2

V

−50
0

−63

dBm

dBV

−13

@

Logarithmic Slope (Note 9)

Logarithmic Intercept (Note 9)

R

IN

DC Resistance (Note 8) 55.7 Ω

900 MHz, 20 kΩ // 68 pF

between V

@

1800 MHz, 20 kΩ // 68 pF

between V

@

1900 MHz, 20 kΩ // 68 pF

between V

@

2000 MHz, 20 kΩ // 68 pF

between V

@

900 MHz, 20 kΩ // 68 pF

between V

@

1800 MHz, 20 kΩ // 68 if

between V

@

1900 MHz, 20 kΩ // 68 pF

between V

@

2000 MHz, 20 kΩ // 68 pF

between V

COMP1

COMP1

COMP1

COMP1

COMP1

COMP1

COMP1

COMP1

and V

and V

and V

and V

and V

and V

and V

and V

COMP2

COMP2

COMP2

COMP2

COMP2

COMP2

COMP2

COMP2

−1.74

−1.62

−1.60

−1.59

–50.4

–52.3

–51.9

–52.3

µA/dB

dBm

Error Amplifier

GBW Gain-Bandwidth Product (Note 8) 5.1 MHz

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LMV242

2.6V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to T

= 2.6V. Boldface limits apply at temperature extremes (Note 4). (Continued)

V

DD

= 25˚C.

J

Symbol Parameter Condition Min Typ Max Units

V

O

Output Swing from Rail From Positive Rail, Sourcing,

=7mA

I

O

From Negative Rail Sinking,

=−7mA

I

O

I

O

e

n

Output Short Circuit Current
(Note 3)

Output Referred Noise f

Sourcing, VO= 2.4V 10 29.5

Sinking, V

MEASURE

= 0.2V 10 27.1

O.

= 10 KHz,

47 90

115

52 90

115

700 nV/

mV

mA

RF Input = 1800 MHz, -10
dBm, 20 kΩ // 68 pF between

COMP1

and V

COMP2,VOUT

, (Note 8)

RAMP

V
=1.4V, set by V

SR Slew Rate 2.1 4.4 V/µs

5.0V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to T

= 5.0V. Boldface limits apply at temperature extremes (Note 4).

V

DD

= 25˚C.

J

Symbol Parameter Condition Min Typ Max Units

I

DD

Supply Current V

=(VDD- GND)/2 7.8 12

OUT

mA

15

0.4 30 µA

V

HIGH

V

LOW

T

ON

I

EN,IBS

In Shutdown (TX_EN = 0V)

=(VDD- GND)/2

V

OUT

Logic Level to Enable Power (Note 7) 1.8 V

Logic Level to Disable Power (Note 7) 0.8 V

Turn-on-Time from Shutdown 1.5 6 µs

Current into TX_EN and BS Pin 0.03 5 µA

RAMP Amplifier

V

RD

1/R

RAMP

I

OUT RAMP

V

Deadband 155 206 265 mV

RAMP

Transconductance (Note 8) 70 96 120 µA/V

Ramp Amplifier Output Current V

=2V 100 168 µA

RAMP

RF Input

P

IN

R

IN

RF Input Power Range
(Note 5)

Logarithmic Slope
(Note 9)

Logarithmic Intercept
(Note 9)

20 kΩ // 68 pF between
V

@

between V

@

between V

@

between V

@

between V

@

between V

@

between V

@

between V

@

between V

and V

COMP1

COMP2

900 MHz, 20 kΩ // 68 pF

and V

COMP1

1800 MHz, 20 kΩ // 68 pF

and V

COMP1

1900 MHz, 20 kΩ // 68 pF

and V

COMP1

2000 MHz, 20 kΩ // 68 pF

and V

COMP1

900 MHz, 20 kΩ // 68 pF

and V

COMP1

1800 MHz, 20 kΩ // 68 pF

and V

COMP1

1900 MHz, 20 kΩ // 68 pF

and V

COMP1

2000 MHz, 20 kΩ // 68 pF

and V

COMP1

COMP2

COMP2

COMP2

COMP2

COMP2

COMP2

COMP2

COMP2

−50
0

−63

−13

−1.79

–1.69

−1.67

–1.65

–50.2

–52.5

–52.5

–52.9

dBm

dBV

µA/dB

dBm

DC Resistance (Note 8) 55.7 Ω

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5.0V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to T

= 5.0V. Boldface limits apply at temperature extremes (Note 4). (Continued)

V

DD

LMV242

= 25˚C.

J

Symbol Parameter Condition Min Typ Max Units

Error Amplifier

GBW Gain-Bandwidth Product (Note 8) 5.7 MHz

V

O

Output Swing from Rail From Positive Rail, Sourcing,

=7mA

I

O

From Negative Rail Sinking,
IO=−7mA

I

O

e

n

Output Short Circuit Current
(Note 3)

Output Referred Noise f

Sourcing, VO= 4.8V 15 31.5

Sinking, V

MEASURE

= 0.2V 15 31.5

O

= 10 kHz,

31 80

105

35 80

105

770 nV/

RF Input = 1800 MHz,

-10dBm, 20 kΩ // 68 pF
between V

= 1.4V, set by V

V

OUT

COMP1

and V

COMP2

RAMP

,

,

(Note 8)

SR Slew Rate 2.5 4.9 V/µs

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human body model: 1.5 kΩ in series with 100 pF.

Note 3: The output is not short circuit protected internally. External protection is necessary to prevent overheating and destruction or adverse reliability.

Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of

the device such that T

Note 5: Power in dBV = dBm + 13 when the impedance is 50Ω.

Note 6: The maximum power dissipation is a function of T

(T

J(MAX)-TA

Note 7: All limits are guaranteed by design or statistical analysis.

Note 8: Typical values represent the most likely parametric norm.

Note 9: Slope and intercept are calculated from graphs "V

)/θJA. All numbers apply for packages soldered directly into a PC board.

. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T

J=TA

, θJAand TA. The maximum allowable power dissipation at any ambient temperature is PD=

J(MAX)

vs. RF input power" where the current is obtained by division of the voltage by 20 kΩ.

OUT

mV

mA

J

>

TA.

Connection Diagrams

LLP-10 Bond Pad Layout

Top View

20079502

20079503

Top View

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Bond Pad mechanical Dimensions

X/Y Coordinates Pad Size

Signal Name Pad Number X Y X Y

Out 1 1 −281 617 92 92

Out 2 2 −281 490 92 92

Comp2 3 −281 363 92 92

V

RF

V

DD

IN

RAMP

4 −281 236 92 92

5 −281 −617 92 92

6 281 −617 92 92

TX_EN 7 281 −360 92 92

BS 8 281 −118 92 92

Comp1 9 281 20 92 92

GND 10 281 187 92 92

Note: Dimensions of the bond pad coordinates are in µm Origin of the coordinates: center of the die Coordinates refer to the center of the bond pad

Pin Descriptions

Pin Name Description

Power Supply 4 V

DD

10 GND Power Ground

Digital Inputs 7 TX_EN Schmitt-triggered logic input. A LOW shuts down the whole

8 BS Schmitt-triggered Band Select pin. When BS = H, channel 1

Analog Inputs 5 RF

6V

IN

RAMP

Compensation 9 Comp1 Connects an external RC network between the Comp1 pin

3 Comp2 Frequency compensation pin. The BS signal switches this pin

Output 1 Out1 This pin is connected to the PA of either channel 1 or

2 Out2

Positive Supply Voltage

chip for battery saving purposes. A HIGH enables the chip.

(OUT1) is selected, when BS = L, channel 2 (OUT2) is
selected.

RF Input connected to the Coupler output with optional
attenuation to measure the Power Amplifier (PA) / Antenna
RF power levels.

Sets the RF output power level. The useful input voltage
range is from 0.2V to 1.8V, although voltages from 0V to V
are allowed.

and the Comp2 pin for an overall loop compensation and to
control the closed loop frequency response. Conventional
loop stability techniques can be used in selecting this
network, such as Bode plots. A good starting value for the
RC combination will beC=68pFandR=0Ω.

either to OUT1 or to OUT2.

channel 2.

LMV242

DD

Note: 1. All inputs and outputs are referenced to GND (pin 10).

<

2. For the digital inputs, a LOW is

3. RF power detection is performed internally in the LMV242 and only an RF power coupler with optional extra attenuation has to be used.

0.8V and a HIGH is>1.8V.

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