LMV116/LMV118 Low Voltage, 45MHz, Rail-to-Rail Output Operational Amplifiers with Shutdown
Option
General Description
The LMV116 (single) rail-to-rail output voltage feedback amplifiers offer high speed (45MHz), and low voltage operation
(2.7V) in addition to micro-power shutdown capability
(LMV118).
Output voltage range extends to within 20mV of either supply rail, allowing wide dynamic range especially in low voltage applications. Even with low supply current of 600µA,
output current capability is kept at a respectable
driving heavier loads. Important device parameters such as
BW, Slew Rate and output current are kept relatively independent of the operating supply voltage by a combination of
process enhancements and design architecture.
For portable applications, the LMV118 provides shutdown
capability while keeping the turn-off current to l5µA. Both
turn-on and turn-off characteristics are well behaved with
minimal output fluctuations during transitions. This allows the
part to be used in power saving mode, as well as multiplexing applications. Miniature packages (SOT23-5 & SOT23-6)
are further means to ease the adoption of these low power
high speed devices in applications where board area is at a
premium.
n −3dB BW45MHz
n Supply voltage range2.7V to 12V
n Slew rate40V/µs
n Supply current600µA
n Power down supply current15µA
n Output short circuit current32mA
n Linear output current
n Input common mode voltage−0.3V to 1.7V
n Output voltage swing20mV from rails
n Input voltage noise40nV/
n Input current noise0.75pA/
±
20mA
Applications
n High speed clock buffer/driver
n Active filters
n High speed portable devices
n Multiplexing applications (LMV118)
n Current sense amplifier
n High speed transducer amplifier
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
LMV116/LMV118
Human Body2KV (Note 2)
Machine Model200V (Note 9)
Differential
V
IN
Output Short Circuit Duration(Note 3), (Note 11)
Supply Voltage (V
Voltage at Input/Output pinsV
+-V−
)12.6V
+
+0.8V, V−−0.8V
Storage Temperature Range−65˚C to +150˚C
±
2.5V
Soldering Information
Infrared or Convection (20 sec)235˚C
Wave Soldering Lead Temp. (10
sec)260˚C
Operating Ratings (Note 1)
Supply Voltage (V
Temperature Range (Note 4)−40˚C to +85˚C
Package Thermal Resistance (Note 4) (θ
SOT23-5265˚C/W
SOT23-6265˚C/W
+–V−
)2.5V to 12V
JA
Junction Temperature (Note 4)+150˚C
2.7V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 2.7V, V−= 0V, VCM=VO=V+/2, and RF=2kΩ, and
=1kΩ to V+/2. Boldface limits apply at the temperature extremes.
R
L
SymbolParameterConditionsMin
(Note 6)
V
OS
TC V
I
B
I
OS
CMRRCommon Mode Rejection
Input Offset Voltage0V ≤ VCM≤ 1.7V
Input Offset Average Drift(Note 12)
OS
Input Bias Current(Note 7)−2.0
Input Offset Current1500nA
V
Stepped from 0V to 1.55V7388dB
CM
Ratio
PSRRPower Supply Rejection RatioV+= 2.7V to 3.7V or V−=0Vto
−1V
R
IN
Common Mode Input
Resistance
C
IN
Common Mode Input
Capacitance
CMVRInput Common-Mode Voltage
CMRR ≥ 50dB−0.3
Range
A
VOL
V
O
I
SC
Large Signal Voltage GainVO= 0.35V to 2.35V73
Output Swing HighRL=1kΩ to V+/22.552.66
R
= 10kΩ to V+/22.68
L
Output Swing LowR
Output Short Circuit CurrentSourcing to V
=1kΩ to V+/215040
L
R
= 10kΩ to V+/220
L
−
VID= 200mV (Note 10)
Sinking to V
+
VID= −200mV (Note 10)
I
I
OUT
S
Output CurrentV
= 0.5V from rails
OUT
Supply CurrentNormal Operation600900
Shut-down Mode (LMV118)1550
SRSlew Rate (Note 8)A
BW−3dB BWA
e
n
Input -Referred Voltage Noisef = 100kHz40
= +1, VO=1V
V
= +1, V
V
OUT
PP
= 200mV
PP
f = 1kHz60
−2.2
7285dB
−0.1
70
2535
2532
Typ
(Note 5)
±
1
Max
(Note 6)
±
±
±
5µV/C
−0.40µA
3MΩ
2pF
1.7
87
±
20mA
40V/µs
45MHz
)
Units
5
mV
6
V
dB
V
mV
mA
µA
nV/
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2.7V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 2.7V, V−= 0V, VCM=VO=V+/2, and RF=2kΩ, and
=1kΩ to V+/2. Boldface limits apply at the temperature extremes.
R
L
SymbolParameterConditionsMin
(Note 6)
i
n
Input-Referred Current Noisef = 100kHz0.75
f = 1kHz1.20
t
on
t
off
TH
SD
Turn-on Time (LMV118)250ns
Turn-off Time (LMV118)560ns
Shut-down Threshold
IS≤ 50µA1.952.3V
Typ
(Note 5)
Max
(Note 6)
pA/
(LMV118)
I
SD
Shutdown Pin Input Current
(Note 7)−20µA
(LMV118)
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= 0V, VCM=VO=V+/2, and RF=2kΩ, and R
=1kΩ to V+/2. Boldface limits apply at the temperature extremes.
SymbolParameterConditionsMin
(Note 6)
V
OS
TC V
I
B
I
OS
CMRRCommon Mode Rejection
Input Offset Voltage0V ≤ VCM≤1.7V
Input Offset Average Drift(Note 12)
OS
Input Bias Current(Note 7)−2.0
Input Offset Current1500nA
V
Stepped from 0V to 3.8V7785dB
CM
Ratio
+
PSRRPower Supply Rejection RatioV
R
IN
Common Mode Input
=5Vto6VorV−= 0V to −1V7295dB
Resistance
C
IN
Common Mode Input
Capacitance
CMVRInput Common-Mode Voltage
CMRR ≥ 50dB−0.3
Range
A
VOL
V
O
I
SC
Large Signal Voltage GainVO= 1.5V to 3.5V73
Output Swing HighRL=1kΩ to V+/24.804.95
R
= 10kΩ to V+/24.98
L
Output Swing LowR
Output Short Circuit CurrentSourcing to V
=1kΩ to V+/220050
L
R
= 10kΩ to V+/220
L
−
VID= 200mV (Note 10)
Sinking to V
+
VID= −200mV (Note 10)
I
I
OUT
S
Output CurrentV
= 0.5V from rails
OUT
Supply CurrentNormal Operation600900
Shut-down Mode (LMV118)1050
SRSlew Rate (Note 8)A
BW−3dB BWA
e
n
Input -Referred Voltage Noisef = 100kHz40
= +1, VO=1V
V
= +1, V
V
OUT
PP
= 200mV
PP
f = 1kHz60
i
n
Input-Referred Current Noisef = 100kHz0.75
f = 1kHz1.20
−2.2
−0.1
70
3545
3543
Typ
(Note 5)
±
1
±
5µV/C
Max
(Note 6)
±
5
±
6
−0.40µA
3MΩ
2pF
4.0
85dB
±
20mA
40V/µs
45MHz
nV/
pA/
LMV116/LMV118
Units
L
Units
mV
V
V
mV
mA
µA
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5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= 0V, VCM=VO=V+/2, and RF=2kΩ, and R
=1kΩ to V+/2. Boldface limits apply at the temperature extremes.
SymbolParameterConditionsMin
LMV116/LMV118
t
on
t
off
TH
Turn-on Time (LMV118)210ns
Turn-off Time (LMV118)500ns
SD
Shut-down Threshold
IS≤ 50µA4.254.60V
(Note 6)
(LMV118)
I
SD
Shutdown Pin Input Current
(Note 7)−20µA
(LMV118)
±
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= −5V, VCM=VO= 0V, and RF=2kΩ, and R
=1kΩ to V+/2. Boldface limits apply at the temperature extremes.
SymbolParameterConditionsMin
(Note 6)
V
OS
TC V
I
B
Input Offset Voltage−5V ≤ VCM≤ 1.7V
Input Offset Average Drift(Note 12)
OS
Input Bias Current(Note 7)−2.0
−2.2
I
OS
CMRRCommon Mode Rejection
Input Offset Current3500nA
V
Stepped from −5V to 3.5V78104dB
CM
Ratio
+
PSRRPower Supply Rejection RatioV
R
IN
Common Mode Input
=5Vto6VorV−= −5V to −6V7295dB
Resistance
C
IN
Common Mode Input
Capacitance
CMVRInput Common-Mode Voltage
Range
A
VOL
Large Signal Voltage GainVO= −2V to 2V74
CMRR ≥ 50dB−5.3
−5.1
71
V
O
I
SC
Output Swing HighRL=1kΩ4.704.92V
R
= 10kΩ4.97
L
Output Swing LowR
Output Short Circuit CurrentSourcing to 0V
=1kΩ−4.70−4.93mV
L
R
= 10kΩ−4.98
L
4057mA
= 200mV (Note 10)
V
ID
Sinking to 0V
4054
VID= −200mV (Note 10)
I
I
OUT
S
Output CurrentV
= 0.5V from rails
OUT
Supply CurrentNormal Operation600900µA
Shut-down Mode (LMV118)1550
SRSlew Rate (Note 8)A
BW−3dB BWA
e
n
Input -Referred Voltage Noisef = 100kHz40
= +1, VO=1V
V
= +1, V
V
OUT
PP
= 200mV
PP
f = 1kHz60
i
n
Input-Referred Current Noisef = 100kHz0.75
f = 1kHz1.20
t
on
t
off
Turn-on Time (LMV118)200ns
Turn-off Time (LMV118)700ns
Typ
(Note 5)
Typ
(Note 5)
±
1
Max
(Note 6)
Max
(Note 6)
±
±
±
5µV/C
−0.40µA
3MΩ
2pF
4.0V
85dB
±
20mA
35V/µs
45MHz
L
Units
L
Units
5
mV
6
nV/
pA/
www.national.com4
±
5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= −5V, VCM=VO= 0V, and RF=2kΩ, and R
=1kΩ to V+/2. Boldface limits apply at the temperature extremes.
SymbolParameterConditionsMin
(Note 6)
TH
SD
Shut-down Threshold
IS≤ 50µA4.254.60V
Typ
(Note 5)
Max
(Note 6)
Units
(LMV118)
I
SD
Shutdown Pin Input Current
(Note 7)−20µA
(LMV118)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5kΩ in series with 100pF.
Note 3: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C.
Note 4: The maximum power dissipation is a function of T
P
=(T
D
J(MAX)-TA
Note 5: Typical values represent the most likely parametric norm.
Note 6: All limits are guaranteed by testing or statistical analysis.
Note 7: Positive current corresponds to current flowing into the device.
Note 8: Slew rate is the average of the rising and falling slew rates.
Note 9: Machine Model, 0Ω in series with 200pF.
Note 10: Short circuit test is a momentary test. See Note 11.
Note 11: Output short circuit duration is infinite for V
Note 12: Offset voltage average drift determined by dividing the change in V
Note 13: Guaranteed based on characterization only.
)/ θJA. All numbers apply for packages soldered directly onto a PC board.
<
6V at room temperature and below. For V
S
, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
J(MAX)
>
6V, allowable short circuit duration is 1.5ms.
at temperature extremes into the total temperature change.
Supply Current vs. Supply VoltageSupply Current vs. V
LMV116/LMV118
= 25˚C. Unless otherwise specified.
J
CM
20080701
Gain and Phase vs. FrequencyCMRR vs. Frequency
20080719
PSRR vs. FrequencyInput Voltage Noise vs. Frequency
20080703
20080720
20080713
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20080718
LMV116/LMV118
Typical Performance Characteristics At T
Input Current Noise vs. Frequency
20080717
Frequency Response for Various (AV)Large Signal Step Response
= 25˚C. Unless otherwise specified. (Continued)
J
Closed Loop Frequency Response for
Various Temperature
20080716
20080715
Offset Voltage vs. Common Mode Voltage
(A Typical Unit)
20080705
20080714
Offset Voltage vs. Common Mode Voltage
(A Typical Unit)
20080706
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Typical Performance Characteristics At T
= 25˚C. Unless otherwise specified. (Continued)
J
Offset Voltage vs. Common Mode Range (A Typical Unit)Input Bias Current vs. Supply Voltage
LMV116/LMV118
Input Bias Current vs. V
Sink Current vs. V
OUT
CM
20080707
20080708
Sink Current vs. V
Souce Current vs. V
20080702
OUT
20080710
OUT
20080709
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20080712
LMV116/LMV118
Typical Performance Characteristics At T
Souce Current vs. V
Application Notes
CIRCUIT DESCRIPTION
The LMV116 and LMV118 are based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process.
The LMV116 and LMV118 architecture features the following:
Complimentary bipolar devices with exceptionally high f
•
(∼8GHz) even under low supply voltage (2.7V) and low
Collector bias current.
Common Emitter push-pull output stage capable of 20mA
•
output current (at 0.5V from the supply rails) while consuming only 600µA of total supply current. This architecture allows output to reach within milli-volts of either
supply rail at light loads.
Consistent performance from any supply voltage (2.7V-
•
10V) with little variation with supply voltage for the most
important specifications (e.g. BW, SR, I
OUT
, etc.)
MICRO-POWER SHUTDOWN
The LMV118 can be shutdown to save power and reduce its
supply current to less than 50µA guaranteed, by applying a
voltage to the SD pin. The SD pin is “active high” and needs
to be tied to V
<
20µA, 4pF equivalent capacitance) and a resistor to V
(
(≤20kΩ) will result in normal operation. Shutdown is guaranteed when SD pin is 0.4V or less from V
−
for normal operation. This input is low current
+
at any operating
supply voltage and temperature.
In the shutdown mode, essentially all internal device biasing
is turned off in order to minimize supply current flow and the
output goes into Hi-Z (high impedance) mode. Complete
device Turn-on and Turn-off times vary considerably relative
to the output loading conditions, output voltage, and input
impedance, but is generally limited to less than 1µs (see
tables for actual data).
During shutdown, the input stage has an equivalent circuit as
shown below in Figure 1
t
−
= 25˚C. Unless otherwise specified. (Continued)
J
OUT
20080711
20080756
FIGURE 1. LMV118 Equivalent Input in Shutdown Mode
As can be seen above, in shutdown, there may be current
flow through the internal diodes shown, caused by input
potential, if present. This current may flow through the external feedback resistor and result in an apparent output signal.
In most shutdown applications the presence of this output is
inconsequential. However, if the output is “forced” by another
device such as in a multiplexer, the other device will need to
conduct the current described in order to maintain the output
potential.
To keep the output at or near ground during shutdown when
there is no other device to hold the output low, a switch
(transistor) could be used to shunt the output to ground.
Figure 2 shows a circuit where a NPN bipolar is used to keep
the output near ground (∼80mV):
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Application Notes (Continued)
LMV116/LMV118
FIGURE 2. Active Pull-Down Schematic
Figure 3 shows the output waveform.
20080764
20080758
FIGURE 4. 2:1 MUX Operating off a 2.7V Single Supply
20080736
FIGURE 3. Output Held Low by Active Pull-Down
Circuit
If bipolar transistor power dissipation is not tolerable, the
switch could be by a N-channel enhancement mode MOSFET.
2.7V SINGLE SUPPLY 2:1 MUX
The schematic show in Figure 4 will function as a 2:1 MUX
operating on a single 2.7V power supply, by utilizing the
shutdown feature of the LMV118.
Figure 5 shows the MUX output when selecting between a
1MHz sine and a 250kHz triangular waveform.
20080735
FIGURE 5. 2:1 MUX Output
As can be seen in Figure 5, the output is well behaved and
there are no spikes or glitches due to the switching. Switching times are approximately around 500ns based on the time
when the output is considered “valid”.
www.national.com10
Application Notes (Continued)
PRINTED CIRCUIT BOARD LAYOUT, COMPONENT
VALUES SELECTION, AND EVALUATION BOARDS
Generally, a good high-frequency layout will keep power
supply and ground traces away from the inverting input and
output pins. Parasitic capacitances on these nodes to
ground will cause frequency response peaking and possible
circuit oscillations (see Application Note OA-15 for more
information).
Another important parameter, is the component values selection. Choosing large valued external resistors, will effect
the closed loop behavior of the stage because of the interaction of these resistors with parasitic capacitances. These
capacitors could be inherent to the device or a by-product of
the board layout and component placement. Either way,
LMV116/LMV118
keeping the resistor values lower, will diminish this interaction. On the other hand, choosing very low value resistors
could load down nodes and will contribute to higher overall
power dissipation.
National Semiconductor suggests the following evaluation
boards as a guide for high frequency layout and as an aid in
device testing and characterization:
DevicePackageEvaluation
Board PN
LMV116SOT23-5CLC730068
LMV118SOT23-6CLC730116
These free evaluation boards are shipped when a device
sample request is placed with National Semiconductor.
LMV116/LMV118 Low Voltage, 45MHz, Rail-to-Rail Output Operational Amplifiers with Shutdown
Option
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Support Center
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